Diodes ZXMD63N03X User Manual

X

Product Summary

I

V

R

(BR)DSS

30V

135m @ V

200m @ VGS = 4.5V

Package

DS(ON)

= 10V

GS

MSOP-8

D

TA = +25°C

(Notes 5 & 6)

2.3A

1.9A

Description

This MOSFET has been designed to minimize the on-state resistance

(R

) and yet maintain superior switching performance, making it

DS(on)

ideal for high efficiency power management applications.

Applications

 DC-DC Converters

 Power Management Functions

 Motor Control

 Disconnect Switches

MSOP8

ZXMD63N03

DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET

Features

 Low On-Resistance

 Low Threshold

 Fast Switching Speed

 Low Gate Drive

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: MSOP-8

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Matte Tin Finish

 Weight: 0.008 grams (approximate)

e3

Top View

Device Symbol

Top View

Pin-Out

Ordering Information (Note 4)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXMD63N03XTA ZXM63N03 7 12 1,000
ZXMD63N03XTC ZXM63N03 13 12 4,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

ZXMD63N03X

Document number: DS33501 Rev. 2 - 2

ZXM6

3N03

ZXM63N03 = Product type Marking Code

1 of 8

www.diodes.com

March 2014

© Diodes Incorporated

X

ZXMD63N03

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Steady

State

@ V

= 4.5V; T

GS

= 4.5V; T

GS

= +25°C (Note 5 & 6)

A

= +70°C (Note 5 & 6)

A

@ V

Pulsed Drain Current (Notes 6 & 7)

Continuous Source Current (Body Diode) (Notes 5 & 6)

Pulsed Source Current (Body Diode) (Notes 6 & 7)

V

DSS

V

GSS

I

D

I

DM

I

S

I

SM

30 V

±20 V

2.3

1.8

A

14 A

1.5 A

14 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation

(Notes 6 & 8)

(Notes 5 & 6) 1.25

P

D

0.87

W

(Notes 8 & 9) 1.04

143

°C/W

Thermal Resistance, Junction to Ambient

(Notes 6 & 8)

(Notes 5 & 6) 100

R

JA

(Notes 8 & 9) 120

Thermal Resistance, Junction to Leads (Note 10)

Operating and Storage Temperature Range

Notes: 5. For a device surface mounted on FR4 PCB measured at t  10 sec.

6. For device with one active die.

7. Repetitive rating - 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300s – pulse width limited by maximum junction temperature.

8. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

9. For device with two active die running at equal power.

10. Thermal resistance from junction to solder-point (at the end of the drain lead).

R

JL

T

, T

J

STG

84.9 °C/W

-55 to +150 °C

ZXMD63N03X

Document number: DS33501 Rev. 2 - 2

2 of 8

www.diodes.com

March 2014

© Diodes Incorporated

X

Thermal Characteristics

ZXMD63N03

ZXMD63N03X

Document number: DS33501 Rev. 2 - 2

3 of 8

www.diodes.com

March 2014

© Diodes Incorporated