Diodes ZXMD63N02X User Manual

Page 1
Product Summary
I
V
R
(BR)DSS
20V
130m @ V
150mΩ @ VGS = 2.7V
Package
DS(ON)
= 4.5V
GS
MSOP-8
D
TA = +25°C
(Notes 5 & 6)
2.5A
2.3A
Description
This MOSFET has been designed to minimize the on-state resistance
) and yet maintain superior switching performance, making it
(R
DS(on)
ideal for high efficiency power management applications.
Applications
DC-DC Converters
Power Management functions
Motor Control
Disconnect Switches
ZXMD63N02X
DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance
Low Threshold
Fast Switching Speed
Low Gate Drive
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: MSOP-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 0.008 grams (approximate)
e3
MSOP8
Top View
Device Symbol
Top View
Pin-Out
Ordering Information (Note 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXMD63N02XTA ZXM63N02 7 12 1,000 ZXMD63N02XTC ZXM63N02 13 12 4,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
4. For packaging details, go to our website at http://www.diodes.com
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free. <1000ppm antimony compounds.
Marking Information
ZXMN63N02X
Document number: DS33500 Rev. 2 - 2
ZXM63N02 = Product type Marking Code
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ZXMD63N02X
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Steady
State
@ V @ V @ V
= 10V; T
GS
= 10V; T
GS
= 10V; T
GS
= +25°C (Note 5 & 6)
A
= +70°C (Note 5 & 6)
A
= +100°C (Note 5 & 6)
A
Pulsed Drain Current (Notes 6 & 7) Continuous Source Current (Body Diode) (Notes 5 & 6) Pulsed Source Current (Body Diode) (Notes 6 & 7)
V
DSS
V
GSS
I
D
I
DM
I
S
I
SM
20 V
±12 V
2.5
1.9
A
0.78 19 A
1.5 A 19 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation
(Notes 6 & 8) (Notes 5 & 6) 1.25
P
D
0.87 W
(Notes 8 & 9) 1.04
Thermal Resistance, Junction to Ambient
(Notes 6 & 8) (Notes 5 & 6) 100
R
JA
143
°C/W
(Notes 8 & 9) 120 Thermal Resistance, Junction to Leads (Note 10) Operating and Storage Temperature Range
Notes: 5. For a device surface mounted on FR4 PCB measured at t 10 sec.
6. For device with one active die.
7. Repetitive rating - 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300s – pulse width limited by maximum junction temperature.
8. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
9. For device with two active die running at equal power.
10. Thermal resistance from junction to solder-point (at the end of the drain lead).
R
JL
, T
T
J
STG
84.9 °C/W
-55 to +150 °C
ZXMN63N02X
Document number: DS33500 Rev. 2 - 2
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Thermal Characteristics
10
R
DS(on)
Limited
1
DC
100m
Drain Current (A) I
Single Pulse
D
10m
T
100m 1 10
amb
1s
=25°C
VDS Drain-Source Voltage (V)
Safe Operating Area
150
T
=25°C
125 100
Thermal Resistance (°C/W)
amb
D=0.5
75 50
D=0.2
25
0
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
100ms
10ms
1ms
100µs
D=0.05
D=0.1
Single Pulse
ZXMD63N02X
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0 0 20 40 60 80 100 120 140 160
Max Power Dissipation (W)
Temperature (°C)
Derating Curve
100
10
Maximum Power (W)
1
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Single Pulse
T
=25°C
amb
Pulse Power Dissipation
ZXMN63N02X
Document number: DS33500 Rev. 2 - 2
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Page 4
)
g
g
g
g
r
r
)
r
)
ZXMD63N02X
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C I Gate-Source Leakage
BV
I
DSS DSS GSS
20 - - V
- - 1.0 µA
- - 100 nA
VGS = 0V, ID = 250A VDS = 20V, VGS = 0V
VGS = ±12V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 11) Forward Transconductance (Notes 11 & 13)
Diodes Forward Voltage (Note 11)
V
GS(th
R
DS (ON)
V
g
fs
SD
0.7 - 3 V
-
65 130 90 150
2.6 - - S
- 0.85 0.95 V
VDS = VGS, ID = 250A
V
= 4.5V, ID = 1.7A
m
GS
V
= 2.7V, ID = 0.85A
GS
VDS = 10V, ID = 0.85A
TJ = 25°C, IS = 1.7A, VGS = 0V DYNAMIC CHARACTERISTICS Input Capacitance (Note 12 & 13) Output Capacitance (Notes 12 & 13) Reverse Transfer Capacitance (Notes 12 & 13) Gate Resistance (Notes 12 & 13) Total Gate Charge (Notes 12 & 13) Gate-Source Charge (Notes 12 & 13) Gate-Drain Charge (Notes 12 & 13) Reverse Recovery Time (Note 13) Reverse Recovery Charge (Note 13) Turn-On Delay Time (Notes 12 & 13) Turn-On Rise Time (Notes 12 & 13) Turn-Off Delay Time (Notes 12 & 13) Turn-Off Fall Time (Notes 12 & 13)
Notes: 11. Measured under pulsed conditions. Pulse width 300μs; duty cycle ≤2%.
12. Switching characteristics are independent of operating junction temperature.
13. For design aid only, not subject to production testing.
C C
t
t
C
R
Q Q Q
t
Q
D(on
t
D(off
t
iss oss rss
r
f
s d
r
- 350 700
- 120 250
- 50 100
- 3.8 7.6
- 4.5 6
- 0.5 0.65
- 2 2.5
- 15 30 ns
- 5.9 - nC
V
pF
f = 1.0MHz f = 1MHz, VGS = 0V, VDS = 0V V
nC
I
D
T di/dt = 100A/µs
- 3.4 -
- 8.1 -
- 13.5 -
ns
V R
- 9.1 -
= 15V, VGS = 0V,
DS
= 4.5V, VDS = 16V,
GS
= 1.7A
= +25°C, IF = 1.7A,
J
= 10V, ID = 1.7A,
DD
= 6, RD = 5.7,
G
ZXMN63N02X
Document number: DS33500 Rev. 2 - 2
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Page 5
Typical Characteristics
ZXMD63N02X
ZXMN63N02X
Document number: DS33500 Rev. 2 - 2
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Typical Characteristics (cont.)
ZXMD63N02X
Test Circuits
ZXMN63N02X
Document number: DS33500 Rev. 2 - 2
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Page 7
Package Outline Dimensions
D
x
y
E
Gauge Plane
Seating Plane
0.25
A2
A1
1
b
A3
A
e
Suggested Pad Layout
Y1
X C
E3
E1
Y
4
x
1
0
Detail C
4
x
1
°
0
°
a
L
c
See Detail C
ZXMD63N02X
MSOP-8
Dim Min Max Typ
A - 1.10 ­A1 0.05 0.15 0.10 A2 0.75 0.95 0.86 A3 0.29 0.49 0.39
b 0.22 0.38 0.30
c 0.08 0.23 0.15
D 2.90 3.10 3.00
E 4.70 5.10 4.90 E1 2.90 3.10 3.00 E3 2.85 3.05 2.95
e - - 0.65
L 0.40 0.80 0.60
a 8° 4°
x - - 0.750
y - - 0.750 All Dimensions in mm
Dimensions Value (in mm)
C 0.650
X 0.450 Y 1.350
Y1 5.300
ZXMN63N02X
Document number: DS33500 Rev. 2 - 2
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
ZXMD63N02X
ZXMN63N02X
Document number: DS33500 Rev. 2 - 2
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