Diodes ZXMD63N02X User Manual
Product Summary
I
V
R
(BR)DSS
20V
130m @ V
150mΩ @ VGS = 2.7V
Package
DS(ON)
= 4.5V
GS
MSOP-8
D
TA = +25°C
(Notes 5 & 6)
2.5A
2.3A
Description
This MOSFET has been designed to minimize the on-state resistance
) and yet maintain superior switching performance, making it
(R
DS(on)
ideal for high efficiency power management applications.
Applications
• DC-DC Converters
• Power Management functions
• Motor Control
• Disconnect Switches
ZXMD63N02X
DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low On-Resistance
• Low Threshold
• Fast Switching Speed
• Low Gate Drive
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: MSOP-8
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish
• Weight: 0.008 grams (approximate)
e3
MSOP8
Top View
Device Symbol
Top View
Pin-Out
Ordering Information (Note 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXMD63N02XTA ZXM63N02 7 12 1,000
ZXMD63N02XTC ZXM63N02 13 12 4,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
4. For packaging details, go to our website at http://www.diodes.com
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free.
<1000ppm antimony compounds.
Marking Information
ZXMN63N02X
Document number: DS33500 Rev. 2 - 2
ZXM63N02 = Product type Marking Code
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ZXMD63N02X
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Steady
State
@ V
@ V
@ V
= 10V; T
GS
= 10V; T
GS
= 10V; T
GS
= +25°C (Note 5 & 6)
A
= +70°C (Note 5 & 6)
A
= +100°C (Note 5 & 6)
A
Pulsed Drain Current (Notes 6 & 7)
Continuous Source Current (Body Diode) (Notes 5 & 6)
Pulsed Source Current (Body Diode) (Notes 6 & 7)
V
DSS
V
GSS
I
D
I
DM
I
S
I
SM
20 V
±12 V
2.5
1.9
A
0.78
19 A
1.5 A
19 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation
(Notes 6 & 8)
(Notes 5 & 6) 1.25
P
D
0.87
W
(Notes 8 & 9) 1.04
Thermal Resistance, Junction to Ambient
(Notes 6 & 8)
(Notes 5 & 6) 100
R
JA
143
°C/W
(Notes 8 & 9) 120
Thermal Resistance, Junction to Leads (Note 10)
Operating and Storage Temperature Range
Notes: 5. For a device surface mounted on FR4 PCB measured at t ≤ 10 sec.
6. For device with one active die.
7. Repetitive rating - 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300s – pulse width limited by maximum junction temperature.
8. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
9. For device with two active die running at equal power.
10. Thermal resistance from junction to solder-point (at the end of the drain lead).
R
JL
, T
T
J
STG
84.9 °C/W
-55 to +150 °C
ZXMN63N02X
Document number: DS33500 Rev. 2 - 2
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June 2012
© Diodes Incorporated
Thermal Characteristics
10
R
DS(on)
Limited
1
DC
100m
Drain Current (A)
I
Single Pulse
D
10m
T
100m 1 10
amb
1s
=25°C
VDS Drain-Source Voltage (V)
Safe Operating Area
150
T
=25°C
125
100
Thermal Resistance (°C/W)
amb
D=0.5
75
50
D=0.2
25
0
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
100ms
10ms
1ms
100µs
D=0.05
D=0.1
Single Pulse
ZXMD63N02X
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 20 40 60 80 100 120 140 160
Max Power Dissipation (W)
Temperature (°C)
Derating Curve
100
10
Maximum Power (W)
1
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Single Pulse
T
=25°C
amb
Pulse Power Dissipation
ZXMN63N02X
Document number: DS33500 Rev. 2 - 2
3 of 8
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June 2012
© Diodes Incorporated
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