Diodes ZXMD63C03X User Manual

ZXMD63C03X

30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY

N-CHANNEL: V
P-CHANNEL: V

DESCRIPTION

This new generation of high density MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.

FEATURES

Low on-resistance

•

Fast switching speed

•

Low threshold

•

Low gate drive

•

Low profile SOIC package

•

APPLICATIONS

•

DC - DC converters

(BR)DSS

(BR)DSS

=30V; R

=-30V; R

=0.135 ; ID=2.3A

DS(ON)

=0.185 ; ID=-2.0A

DS(ON)

MSOP8

P-channelN-channel

•

Power management functions

•

Disconnect switches

•

Motor control

ORDERING INFORMATION

DEVICE REEL SIZE

(inches)

ZXMD63C03XTA 7 12 embossed 1,000

ZXMD63C03XTC 13 12 embossed 4,000

TAPE WIDTH

(mm)

QUANTITY

PER REEL

DEVICE MARKING

ZXM63C03

ISSUE 2 - SEPTEMBER 2007

1

Pin-out

Top view

ZXMD63C03X

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL N-CHANNEL P-CHANNEL UNIT

Drain-Source Voltage V

Gate- Source Voltage V

Continuous Drain Current

(V

=4.5V; TA=25°C)(b)(d)

GS

(V

=4.5V; TA=70°C)(b)(d)

GS

Pulsed Drain Current (c)(d) I

Continuous Source Current (Body Diode)(b)(d) I

Pulsed Source Current (Body Diode)(c)(d) I

Power Dissipation at T
Linear Derating Factor

Power Dissipation at T
Linear Derating Factor

Power Dissipation at T
Linear Derating Factor

=25°C (a)(d)

A

=25°C (a)(e)

A

=25°C (b)(d)

A

Operating and Storage Temperature Range T

DSS

GS

I

D

DM

S

SM

P

D

P

D

P

D

j:Tstg

30 -30 V

⫾20 V

2.3

1.8

-2.0

-1.6

14 -9.6 A

1.5 -1.4 A

14 -9.6 A

0.87

6.9

1.04

8.3

1.25
10

-55 to +150 °C

A
A

W

mW/°C

W

mW/°C

W

mW/°C

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient (a)(d) R

Junction to Ambient (b)(d) R

Junction to Ambient (a)(e) R

NOTES:

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.

θJA

θJA

θJA

ISSUE 2 - SEPTEMBER 2007

2

143 °C/W

100 °C/W

120 °C/W

N-CHANNEL CHARACTERISTICS

ZXMD63C03X

ISSUE 2 - SEPTEMBER 2007

3

P-CHANNEL CHARACTERISTICS

ZXMD63C03X

ISSUE 2 - SEPTEMBER 2007

4