Diodes ZXMC6A09DN8 User Manual

ZXMC6A09DN8

COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET

SUMMARY
N-Channel V

P-Channel V

(BR)DSS

(BR)DSS

= 60V; R

= -60V; R

DESCRIPTION

This new generation of trench MOSFETs from Zetex utilizes a unique structure
thatcombinesthebenefitsoflowon-resistance with fast switching speed.This
makes them ideal for high efficiency, low voltage, power management
applications.

= 0.045 ;ID= 5.1A

DS(ON)

= 0.055 ;ID= -4.8A

DS(ON)

FEATURES

Low on-resistance

•

Fast switching speed

•

Low threshold

•

Low gate drive

•

• Low profile SOIC package

APPLICATIONS

•

Motor drive

•

LCD backlighting

ORDERING INFORMATION

DEVICE REEL TAPE

ZXMC6A09DN8TA 7
ZXMC6A09DN8TC 13’‘ 12mm 2500 units

WIDTH

’‘ 12mm 500 units

QUANTITY

PER REEL

DEVICE MARKING

ZXMC
6A09

SO8

Q2 = P-CHANNELQ1 = N-CHANNEL

PINOUT

ISSUE 4 - MAY 2005

Top view

1

ZXMC6A09DN8

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL N-ChannelP-Channel UNIT

Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current@V

=10V; TA=25⬚C

GS

@VGS=10V; TA=25⬚C
@VGS=10V; TA=25⬚C

Pulsed Drain Current

(c)

Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at T

=25°C

A

(c)

(a)(d)

(b)(d)
(b)(d)
(a)(d)

(b)

Linear Derating Factor
Power Dissipation at T

=25°C

A

(a)(e)

Linear Derating Factor
Power Dissipation at T

=25°C

A

(b)(d)

Linear Derating Factor
Operating and Storage Temperature Range T

DSS

GS

I

D

I

DM

I

S

I

SM

P

D

P

D

P

D

j:Tstg

60 -60 V

⫾20 ⫾20 V

5.1

4.1

3.9

-4.8

-3.8

-3.7

25 -23 A

3.5 -3.3 A

25.4 -23.8 A

1.25
10

mW/°C

1.8
14

mW/°C

2.1
17

mW/°C

-55 to +150 °C

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient
Junction to Ambient
Junction to Ambient

(a)(d)

(b)(e)

(b)(d)

R

θJA

R

θJA

R

θJA

100 °C/W

69 °C/W
58 °C/W

A
A

W

W

W

Notes:

(a) For a dual device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t ⱕ10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02, pulse width=300µs - pulse width limited by maximum junction temperature.
(d) For a dual device with one active die.
(e) For a device with two active die running at equal power.

ISSUE 4 - MAY 2005

2

CHARACTERISTICS

ZXMC6A09DN8

ISSUE 4 - MAY 2005

3