Diodes ZXMC4A16DN8 User Manual
ZXMC4A16DN8
COMPLEMENTARY 40V ENHANCEMENT MODE MOSFET
SUMMARY
N-Channel = V
(BR)DSS
= 40V : R
= 0.05 ; ID= 5.2A
DS(on)
P-Channel = V
(BR)DSS
= -40V : R
= 0.06 ; ID= -4.7A
DS(on)
DESCRIPTION
This new generation of trench MOSFETs from Zetex
utilises a unique structure that combines the benefits
of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage,
power management applications.
FEATURES
Low on-resistance
•
Fast switching speed
•
Low threshold
•
•
Low gate drive
•
Low profile SOIC package
APPLICATIONS
•
Motor drive
•
LCD backlighting
ORDERING INFORMATION
DEVICE REEL
SIZE
ZXMC4A16DN8TA
ZXMC4A16DN8TC 13” 12mm 2,500
TAPE WIDTH
7” 12mm 500
QUANTITY PER
REEL
8
O
S
PINOUT
DEVICE MARKING
•
ZXMC
4A16
ISSUE 1 - NOVEMBER 2004
TOP VIEW
1
SEMICONDUCTORS
ZXMC4A16DN8
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL N-channel P-channe| UNIT
Drain-source voltage V
Gate-source voltage V
Continuous drain current
= 10V; TA=25°C)
(V
GS
(VGS= 10V; TA=70°C)
(VGS= 10V; TA=25°C)
Pulsed drain current
(c)
Continuous source current (body diode)
Pulsed source current (body diode)
(a) (d)
Power dissipation at T
=25°C
A
(b)(d)
(b)(d)
(a)(d)
(b)
(c)
Linear derating factor
(a) (e)
Power dissipation at T
=25°C
A
Linear derating factor
(b) (d)
Power dissipation at T
=25°C
A
Linear derating factor
Operating and storage temperature range T
DSS
GS
I
D
I
DM
I
S
I
SM
P
D
P
D
P
D
j,Tstg
40 -40 V
⫾20 ⫾20 V
5.2
4.1
4.0
-4.7
-3.8
-3.6
24 -23 A
2.5 2.3 A
24 23 A
1.25
10
mW/°C
1.8
14
mW/°C
2.1
17
mW/°C
-55 to +150 °C
A
A
A
W
W
W
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to ambient
Junction to ambient
Junction to ambient
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ 10 sec.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Pulse width 300us, d<= 0.02. Refer to Transient Thermal Impedance
graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
SEMICONDUCTORS
(a) (d)
(a) (e)
(b) (d)
R
R
R
⍜JA
⍜JA
⍜JA
2
100 °C/W
70 °C/W
60 °C/W
ISSUE 1 - NOVEMBER 2004
TYPICAL CHARACTERISTICS
ZXMC4A16DN8
ISSUE 1 - NOVEMBER 2004
3
SEMICONDUCTORS
Loading...