Diodes ZXMC4559DN8 User Manual

ZXMC4559DN8

COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET

Product Summary

I

Device

Q2 60V Q1 -60V

V

R

(BR)DSS

DS(on) max

55mΩ @ V

105mΩ @ V

= 10V

GS

= -10V

GS

D

TA = +25°C

4.7A

-3.9A

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(on)

Applications

• DC-DC Converters

• Power Management Functions

ADVANCE INFORMATION

• Backlighting

NEW PRODUCT

Top View

S2

G2

S1

G1

TOP VIEW

Internal Schematic

Features and Benefits

• Low Input Capacitance

• Low On-Resistance

• Fast Switching Speed

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – Tin Finish annealed over Copper leadframe

Solderable per MIL-STD-202, Method 208

• Weight: 0.074 grams (approximate)

D2

D1

G2

G

1

D1

S2

N-Channel MOSFET

P-Channel MOSFET

D1

S1

Ordering Information (Note 4)

Part Number Compliance Case Packaging

ZXMC4559DN8TA Standard SO-8 500/Tape & Reel ZXMC4559DN8TC Standard SO-8 2,500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

ZXMC4559DN8

Document number: DS34498 Rev. 7- 2

8 5

ZXMC

4559

YY WW

1 4

ZXMC4559 = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 14 = 2014) WW = Week (01 - 53)

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ZXMC4559DN8

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value_Q2 Value_Q1 Units

Drain-Source Voltage

Gate-Source Voltage

SteadyState

Continuous Drain Current VGS = 10V

Maximum Body Diode Forward Current at t<10s (Note 6)

Pulsed Drain Current (300µs pulse, duty cycle = 2%)

Pulsed Source Current (Body Diode) (300µs pulse, duty cycle = 2%)

(Note 5)

t<10s

(Note 6)

V

DSS

V

GSS

I

D

I

D

I

S

I

DM

I

SM

60 -60 V

±20 ±20 V

3.6 -2.6 A

4.7 -3.9 A

3.4 -3.2 A

22.2 -18.3 A

Thermal Characteristics (@T

ADVANCE INFORMATION

NEW PRODUCT

Power Dissipation Linear Derating Factor (Note 5)

Power Dissipation Linear Derating Factor (Note 6)

Thermal Resistance, Junction to Ambient (Note 5)

Thermal Resistance, Junction to Ambient (Note 6)

Operating and Storage Temperature Range

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

P

R

T

J, TSTG

θJA

D

1.25 10

2.1 17

100

58

-55 to +150 °C

W

mW/°C

W

mW/°C

°C/W

ZXMC4559DN8

Document number: DS34498 Rev. 7- 2

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March 2014

ADVANCE INFORMATION

NEW PRODUCT

ZXMC4559DN8

Document number: DS34498 Rev. 7- 2

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ZXMC4559DN8

Electrical Characteristics N-Channel Q2 (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

60

⎯ ⎯

V

1.0 µA

±100

nA

VGS = 0V, ID = 250µA

VDS = 60V, VGS = 0V

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Diode Forward Voltage

Forward Transconductance

V

R

DS(ON)

V

GS(th)

SD

g

fs

1.0

⎯ ⎯

⎯

⎯ ⎯

55

75

0.85 1.2 V

10.2

⎯

V

VDS = VGS, ID = 250µA

V

mΩ

VGS = 4.5V, ID = 4.0A

VGS = 0V, IS = 5.5A

S

VDS=15V,ID=4.5A

= 10V, ID = 4.5A

GS

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

ADVANCE INFORMATION

Total Gate Charge (VGS = 5.0V) Qg ⎯

NEW PRODUCT

Total Gate Charge (VGS = 10V) Qg

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

C

⎯

iss

C

oss

C

⎯

rss

Q

⎯

gs

Q

⎯

gd

t

D(on)

t

⎯

r

t

⎯

D(off)

t

f

t

⎯

rr

Q

⎯

rr

⎯

1063

104

64

11

20.4

4.1

5.1

3.5

4.1

26.2

10.6

22

21.4

⎯

V

= 30V, VGS = 0V,

pF

nC

nS

nC

DS

f = 1.0MHz

V

= 30V, ID = 4.5A

DS

= 30V, ID = 1.0A

V

DD

= 10V, RG = 6.0Ω

V

GS

IF = 2.2A, di/dt = 100A/μs

ZXMC4559DN8

Document number: DS34498 Rev. 7- 2

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March 2014