Diodes ZXMC3F31DN8 User Manual

ZXMC3F31DN8 30V SO8 Complementary dual enhancement mode MOSFET

Summary

Device

Q1 30 12.9

Q2 -30 12.7

V

Description

This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (R switching performance making it ideal for power management and battery charging functions.

Features

• Low on-resistance

• 4.5V gate drive capability

• Low profile SOIC package

(BR)DSS

(V)

QG

(nC)

I

(Ω)

R

DS(on)

0.024 @ VGS= 10V 7.3

0.039 @ V

0.045 @ VGS= -10V 5.3

0.080 @ V

= 4.5V 5.7

GS

= -4.5V 4

GS

(A)

D

) and yet maintain superior

DS(on)

D1

D2

Applications

• DC-DC Converters

• SMPS

• Load switching switches

• Motor control

G1

S1

Q1 N-Channel Q2 P-Channel

• Backlighting

Ordering information

Device Reel size

(inches)

ZXMC3F31DN8TA 7 12 500

Tape width

(mm)

Quantity

per reel

Device marking

ZXMC 3F31

Issue 1 - September 2008 1

G1

S2

G2

N

Top view

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G2

S2

D1S1

D1

D2

P

D2

Absolute maximum ratings

ZXMC3F31DN8

Parameter Symbol N-

channel

Q1

Drain-Source voltage Gate-Source voltage

Continuous Drain current @ VGS= 10V; TA=25°C @ V @ V

= 10V; TA=70°C

GS

= 10V; TA=25°C

GS

@ VGS= 10V; TA=25°C @ V

Pulsed Drain current

(c)

Continuous Source current (Body diode) Pulsed Source current (Body diode) Power dissipation at TA =25°C

= 10V; TL=25°C

GS

(b)(d)

(c)(d)

(a)(d)

(b)(d) (b)(d) (a)(d) (a)(e)

(f)(d)

DSS

V

GS

I

D

I

DM

I

S

I

SM

P

D

30 -30 V

±20 ±20

7.3

5.9

5.7

6.8

7.8 33 23 A

3.5 3.2 A 33 23 A

V

Linear derating factor Power dissipation at TA =25°C

(a)(e)

P

D

Linear derating factor Power dissipation at TA =25°C

(b)(d)

P

D

Linear derating factor Power dissipation at TL =25°C

(f) (d)

P

D

Linear derating factor

, T

Operating and storage temperature range

T

j

stg

channel

1.25 10

1.8 14

2.1 17

2.35 19

-55 to 150

P-

Q2

5.3

4.3

4.1

4.9

5.7

Unit

V A

W

mW/°C

W

mW/°C

W

mW/°C

W

mW/°C

°C

Thermal resistance

Parameter Symbol Value Unit

(f) (d)

(a)(d) (a)(e) (b)(d)

Junction to ambient Junction to ambient Junction to ambient Junction to lead

NOTES:

(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still

air conditions. (b) Mounted on FR4 PCB measured at t ≤ 10 sec. (c) Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction

temperature. (d) For a device with one active die. (e) For a device with two active die running at equal power. (f) Thermal resistance from junction to solder-point (at the end of the drain lead).

R R R R

θJA θJA θJA

θJL

100

70 60 53

°C/W °C/W °C/W °C/W

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Thermal characteristics

ZXMC3F31DN8

R

DS(ON)

Limited

10

DC

1

100m

Drain Current (A)

D

10m

I

0.1 1 10

1s

100ms

Note (a)(d)

NPN @ Single Pulse, T

10ms

amb

1ms

=25°C

100us

VDS Drain-Source Voltage (V)

N-channel Safe Operating Area

100

80

D=0.5

60

40

D=0.2

20

Thermal Resistance (°C/W)

0

100µ 1m 10m 100m 1 10 100 1k

Single Pulse

D=0.05

D=0.1

Pulse Width (s)

Transient Thermal Impedance

R

DS(ON)

Limited

10

DC

1

100m

Drain Current (A)

D

10m

-I

0.1 1 10

1s

100ms

10ms

Note (a)(d)

PNP @ Single Pulse, T

amb

1ms

100us

=25°C

-VDS Drain-Source Voltage (V)

P-channel Safe O p erating A rea

2.0

1.5

1.0

0.5

0.0 0 25 50 75 100 125 150

Max Power Dissipation (W)

Temperature (°C)

Two active die

One active die

Derating Curve

Single Pulse T

100

10

amb

=25°C

Maximum Power (W)

1

100µ 1m 10m 100m 1 10 100 1k

Pulse Width (s)

Pulse Power Dissipation

Issue 1 - September 2008 3

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ZXMC3F31DN8

Q1 N-channel electrical characteristics (at T

= 25°C unless otherwise stated)

amb

Parameter Symbol Min. Typ. Max. Unit Conditions Static

Drain-Source breakdown

V

(BR)DSS

30 V

I

= 250μA, VGS=0V

D

voltage Zero Gate voltage Drain

current Gate-Body leakage

Gate-Source threshold voltage

Static Drain-Source on-state resistance

Forward Transconductance

Dynamic

(†)

(*)

(*) (†)

Input capacitance Output capacitance Reverse transfer

I

DSS

I

GSS

V

GS(th)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

0.5 µA

100 nA

1.0 3.0 V

0.024

Ω

0.039

16.5

S

608

pF 132 pF 72 pF

V

=30V, VGS=0V

DS

V

=±20V, V

GS

I

= 250μA, VDS=VGS

D

V

= 10V, ID= 7.0A

GS

V

= 4.5, ID= 6.0A

GS

V

= 15V, ID= 7.0A

DS

= 15V, VGS=0V

V

DS

f=1MHz

=0V

capacitance

Switching

Turn-on-delay time Rise time

Turn-off delay time Fall time Total Gate charge Gate-Source charge

Gate-Drain charge

(‡) (†)

t

d(on)

t

r

t

d(off)

t

f

Q Q Q

2.9 ns

3.3 ns 16 ns 8 ns

g

gs

gd

12.9 nC

2.5 nC

2.52 nC

= 15V, VGS=10V

V

DD

= 1A

I

D

≅ 6.0Ω,

R

G

= 15V, VGS= 10V

V

DS

I

= 7A

D

Source–Drain diode

Diode forward voltage Reverse recovery time

(*)

(‡)

Reverse recovery charge

(‡)

0.82 1.2 V

V

SD

t

rr

Q

rr

12 ns

4.8 nC

I

= 1.7A,VGS=0V

S

IS= 2.2A,di/dt=100A/μs

NOTES:

(*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%. (†)Switching characteristics are independent of operating junction temperature. (‡)For design aid only, not subject to production testing

Issue 1 - September 2008 4

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