Diodes ZXMC3AMC User Manual

A

f

Product Summary

30V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

I

max

D

Device

V

Q1 30V

Q2 -30V

(BR)DSS

R

DS(on)

120mΩ @ V 180mΩ @ VGS = 4.5V 210mΩ @ V

330mΩ @ VGS = -4.5V

max

= 10V

GS

= -10V

GS

TA = 25°C

(Notes 4 & 7)

3.7A

3.0A

-2.7A

-2.2A

Description and Applications

This MOSFET has been designed to minimize the on-state resistance (R

) and yet maintain superior switching performance, making it

DS(on)

ideal for high efficiency power management applications.

• MOSFET gate drive

• LCD backlight inverters

• Motor control

• Portable applications

Top View

DFN3020B-8

D2 D2 D1 D1

D2

G2 S2 G1 S1

Bottom View

Product Line o

Diodes Incorporated

Features and Benefits

• Low profile package, for thin applications

• Low R

• 6mm

• Low on-resistance

• Fast switching speed

• “Lead-Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free. "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

, thermally efficient package

θJA

2

footprint, 50% smaller than TSOP6 and SOT23-6

Mechanical Data

• Case: DFN3020B-8

• Terminals: Pre-Plated NiPdAu leadframe

• Nominal package height: 0.8mm

• UL Flammability Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Solderable per MIL-STD-202, Method 208

• Weight: 0.013 grams (approximate)

D1

Bottom View

Pin-Out

Pin 1

G1

S1

Q1 N-Channel Q2 P-Channel

Equivalent Circuit

ZXMC3AMC

D2

G2

S2

Ordering Information (Note 3)

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXMC3AMCTA C01 7 8 3000

Notes: 1. No purposefully added lead

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

C01

ZXMC3AMC

Document number: DS35088 Rev. 1 - 2

C01 = Product Type Marking Code Top view, Dot Denotes Pin 1

1 of 11

www.diodes.com

December 2010

A

f

Product Line o

Diodes Incorporated

ZXMC3AMC

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol N-channel – Q1 P-channel – Q2 Unit Drain-Source Voltage Gate-Source Voltage

(Notes 4 & 7)

Continuous Drain Current

V

GS

= 10V

TA = 70°C (Notes 4 & 7) (Notes 3 & 7) 2.9 -2.1

Pulsed Drain Current

V

GS

= 10V

(Notes 6 & 7) Continuous Source Current (Body diode) (Notes 4 & 7) Pulse Source Current (Body diode) (Notes 6 & 7)

V V

DSS GSS

I

DM

I

SM

30

±20

3.7 -2.7

D

S

3.0 -2.2

13 -9.2

3.2 -2.8 13 -9.2

-30

±20

V

A

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol N-channel – Q1 P-channel – Q2 Unit

1.50 12

2.45

19.6

1.13

9

1.70

13.6

83.3

W

mW/°C

°C/W

Power Dissipation Linear Derating Factor

Thermal Resistance, Junction to Ambient

(Notes 3 & 7) (Notes 4 & 7)

P

D

(Notes 5 & 7) (Notes 5 & 8)

(Notes 3 & 7) (Notes 4 & 7) 51.0 (Notes 5 & 7) 111

R

θJA

(Notes 5 & 8) 73.5 Thermal Resistance, Junction to Lead (Notes 7 & 9) Operating and Storage Temperature Range

Notes: 3. For a device surface mounted on 28mm x 28mm (8cm2) FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is

measured when operating in a steady-state condition. The heatsink is split in half with the exposed drain pads connected to each half.

4. Same as note (3) except the device is measured at t < 5 sec.

5. Same as note (3), except the device is surface mounted on 31mm x 31mm (10cm

6. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.

7. For a dual device with one active die.

8. For dual device with 2 active die running at equal power.

9. Thermal resistance from junction to solder-point (at the end of the drain lead).

R

θJL

T

, T

J

STG

2

) FR4 PCB with high coverage of single sided 1oz copper.

17.1

-55 to +150 °C

ZXMC3AMC

Document number: DS35088 Rev. 1 - 2

2 of 11

www.diodes.com

December 2010

A

f

Thermal Characteristics

R

10

DS(ON)

Limited

1

DC

1s

100m

Drain Current (A)

D

I

10m

100ms

8 sq cm 2oz Cu One act ive die

Single Pul s e, T

amb

110

VDS Drain-Source Voltage (V)

N-channel Safe Operating Area

10ms

=25°C

1ms

100us

Product Line o

Diodes Incorporated

1

8 sq cm 2oz C u One active die

Single Pulse, T

R

DS(ON)

Limited

DC

1s

100ms

10ms

1ms

=25°C

amb

110

100m

Drain Current (A)

D

-I

10m

10

-VDS Drain-Source Voltage (V)

P-channel Safe O p erating A rea

ZXMC3AMC

100us

90

8 sq cm 2oz Cu

80

One active die

60

D=0.5

40

D=0.2

20

Thermal Resistance (°C/W)

0

100µ 1m 10m 100m 1 10 100 1k

Single Pulse

D=0.05

D=0.1

Pulse Width (s)

Transient Thermal Impedance

3.5

T

=25°C

amb

3.0

T

=150°C

j max

Continuous

2.5

2.0

1.5

1.0

Dissipation (W)

D

0.5

P

0.0

0.1 1 10 100

2oz Cu One a ctive die

2oz Cu

2oz Cu Two active die

Two active die

1oz Cu One active die

1oz Cu Two active die

Board Cu Area (sqcm)

Power Dissipation v Board A rea

2.0

10 sq cm 1oz Cu Two active die

1.5

1.0

8 sq cm 2oz Cu One active die

10 sq cm 1oz Cu One active die

0.5

0.0 0 25 50 75 100 125 150

Max Power Dissipation (W)

Temperature (°C)

Derating Curve

225 200 175 150

1oz Cu One a ctive die

1oz Cu Two active die

125 100

75 50 25

Thermal Resistance (°C/W)

2oz Cu One active die

0

0.1 1 10 100

2oz Cu Two active die

Board Cu Area (sqcm)

Thermal Resistance v Board A rea

ZXMC3AMC

Document number: DS35088 Rev. 1 - 2

3 of 11

www.diodes.com

December 2010

A

f

)

r

g

)

r

)

Electrical Characteristics – Q1 N-Channel @T

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage

ON CHARACTERISTICS

Gate Threshold Voltage Static Drain-Source On-Resistance (Note 10) Forward Transconductance (Note 10 & 11)

Diode Forward Voltage (Note 10) Reverse Recover Time (Note 11) Reverse Recover Charge (Note 11)

DYNAMIC CHARACTERISTICS (Note 11)

Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (Note 12) Total Gate Charge (Note 12) Gate-Source Charge (Note 12) Gate-Drain Charge (Note 12) Turn-On Delay Time (Note 12) Turn-On Rise Time (Note 12) Turn-Off Delay Time (Note 12) Turn-Off Fall Time (Note 12)

Notes: 10. Measured under pulsed conditions. Width ≤ 300µs. Duty cycle ≤ 2%.

11. For design aid only, not subject to production testing.

12. Switching characteristics are independent of operating junction temperature.

Characteristic Symbol Min Typ Max Unit Test Condition

BV

DSS

I

DSS

I

GSS

V

GS(th

R

DS (ON)

g

fs

V

SD

t

r

Q

r

C

iss

C

oss

C

rss

Q Q

Q

s

Q

d

t

D(on

t

D(off

t

f

= 25°C unless otherwise specified

A

30 - - V

Diodes Incorporated

- - 0.5

- - ±100 nA

1.0 - 3.0 V

0.100 0.120

-

0.140 0.180

- 3.5 - S

- 0.85 0.95 V

- 17.7

- 13.0

-

- 190 -

- 38 -

- 20 -

- 2.3 -

- 3.9 -

- 0.6 -

- 0.9 -

- 1.7 -

- 2.3 -

- 6.6 -

- 2.9 -

Product Line o

ID = 250μA, VGS = 0V

μA

Ω

ns nC

pF pF pF nC nC nC nC ns ns ns ns

= 30V, VGS = 0V

V

DS

VGS = ±20V, VDS = 0V

ID = 250μA, VDS = VGS V

= 10V, ID = 2.5A

GS

V

= 4.5V, ID = 2.0A

GS

VDS = 10V, ID = 2.5A IS = 1.7A, VGS = 0V

I

= 2.5A, di/dt= 100A/µs

S

= 25V, VGS = 0V,

V

DS

f = 1.0MHz

= 4.5V

V

GS

= 10V

V

GS

= 15V, I

V

DS

V

= 10V, RG = 6Ω

GS

ZXMC3AMC

V

= 15V

DS

I

= 2.5A

D

= 2.5A

D

ZXMC3AMC

Document number: DS35088 Rev. 1 - 2

4 of 11

www.diodes.com

December 2010