Diodes ZXMC3A18DN8 User Manual

ZXMC3A18DN8 Complementary 30V enhancement mode MOSFET

Summary

N-Channel = V

P-Channel = V

(BR)DSS

= 30V : R

= -30V : R

= 0.025⍀; ID= 7.6A

DS(on)

= 0.035⍀; ID= -6.3A

DS(on)

Description

This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

Features

• Low on-resistance

• Fast switching speed

• Low threshold

• Low gate drive

• Low profile SOIC package

Applications

•Motor Drive

• LCD backlighting

D1

G1

G2

S1

Q1 N-Channel Q2 P-Channel

G1

S2

G2

SO8

D2

S2

D1 S1

D1

D2

Ordering information

Device Reel size

(inches)

ZXMC3A18DN8TC 13 12 2500

Tape width

(mm)

Quantity

per reel

Device marking

ZXMC 3A18

Issue 2 - September 2007 1 www.zetex.com

Absolute maximum ratings

ZXMC3A18DN8

Parameter Symbol

Drain-source voltage V

Gate-source voltage V

Continuous drain current (V

Pulsed drain current

(c)

(V

= 10V; T

GS

= 10V; T

GS

= 10V; T

GS

amb

Continuous source current (body diode)

(a)(d)

(c)

Pulsed source current (body diode)

Power dissipation at T

amb

=25°C

=25°C)

=70°C)

=25°C)

(b)

(b)(d)

(a)(d)

DSS

GS

I

D

DM

I

S

SM

P

N-channel P-channel

30 -30 V

±20 ±20 V

7.6 -6.3 A

6.1 -5.0

5.8 -4.8

37 -30 A

3.6 3.2 A

37 30 A

D

Unit

1.25 W

Linear derating factor 10 mW/°C

Power dissipation at T

amb

=25°C

(a)(e)

P

D

1.8 W

Linear derating factor 14 mW/°C

Power dissipation at T

amb

=25°C

(b)(d)

P

D

2.1 W

Linear derating factor 17 mW/°C

Operating and storage temperature range T

j

, T

stg

-55 to +150 °C

Thermal resistance

Parameter Symbol

Junction to ambient

NOTES:

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air

conditions. (b) For a device surface mounted on FR4 PCB measured at t 10 sec. (c) Repetitive rating - pulse width limited by maximum junction temperature. Pulse width 300

transient thermal impedance graph. (d) For device with one active die. (e) For device with two active die running at equal power.

(a)(d)

(a)(e)

(b)(d)

R

JA

Value

Unit

100 °C/W

70 °C/W

60 °C/W

s, d<= 0.02. Refer to

Issue 2 - September 2007 2 www.zetex.com

Characteristics

ZXMC3A18DN8

Issue 2 - September 2007 3 www.zetex.com

ZXMC3A18DN8

NOTES:

N-channel Electrical characteristics (at T

Parameter Symbol Min. Typ. Max. Unit Conditions

Static

Drain-source breakdown voltage

Zero gate voltage drain current I

Gate-body leakage I

Gate-source threshold voltage V

Static drain-source on-state

(*)

resistance

Forward transconductance

(*)(‡)

V

R

g

= 25°C unless otherwise stated)

amb

(BR)DSS

DSS

GSS

GS(th)

DS(on)

30 V ID= 250A, VGS=0V

0.5 AVDS=30V, VGS=0V

100 nA VGS=±20V, VDS=0V

1.0 V ID= 250A, VDS=V

0.025  VGS= 10V, ID= 5.8A

0.030 V

fs

17.5 S VDS= 15V, ID= 5.8A

= 4.5V, ID= 5.3A

GS

Dynamic

(‡)

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Switching

(†) (‡)

Turn-on-delay time t

Rise time t

Turn-off delay time t

Fall time t

Gate charge Q

Total gate charge Q

Gate-source charge Q

Gate drain charge Q

Source-drain diode

Diode forward voltage

Reverse recovery time

Reverse recovery charge

(*)

(‡)

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

V

SD

t

rr

Q

rr

1800 pF VDS= 25V, VGS=0V

289 pF

f=1MHz

178 pF

5.5 ns VDD= 15V, ID= 6A ≅ 6.0, VGS= 10V

R

8.7 ns

G

33 ns

8.5 ns

19.4 nC VDS= 15V, VGS= 5V = 3.5A

I

D

36 nC VDS= 15V, VGS= 10V

I

= 3.5A

5.5 nC

D

7.0 nC

0.95 V Tj=25°C, IS= 6A, VGS=0V

20.5 ns Tj=25°C, IS= 6A,

41.5 nC

di/dt=100A/s

(*) Measured under pulsed conditions. Pulse width 300s; duty cycle 2%. (†) Switching characteristics are independent of operating junction temperature. (‡) For design aid only, not subject to production testing.

Issue 2 - September 2007 4 www.zetex.com