Diodes ZXMC3A18DN8 User Manual

ZXMC3A18DN8
Complementary 30V enhancement mode MOSFET

Summary

N-Channel = V

P-Channel = V

(BR)DSS

(BR)DSS

= 30V : R

= -30V : R

= 0.025⍀; ID= 7.6A

DS(on)

= 0.035⍀; ID= -6.3A

DS(on)

Description

This new generation of trench MOSFETs from Zetex
utilizes a unique structure that combines the benefits of
low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power
management applications.

Features

• Low on-resistance

• Fast switching speed

• Low threshold

• Low gate drive

• Low profile SOIC package

Applications

•Motor Drive

• LCD backlighting

D1

G1

G2

S1

Q1 N-Channel Q2 P-Channel

G1

S2

G2

SO8

D2

S2

D1 S1

D1

D2

D2

Ordering information

Device Reel size

(inches)

ZXMC3A18DN8TC 13 12 2500

Tape width

(mm)

Quantity

per reel

Device marking

ZXMC
3A18

Issue 2 - September 2007 1 www.zetex.com

© Zetex Semiconductors plc 2007

Absolute maximum ratings

ZXMC3A18DN8

Parameter Symbol

Drain-source voltage V

Gate-source voltage V

Continuous drain current (V

Pulsed drain current

(c)

(V

(V

= 10V; T

GS

= 10V; T

GS

= 10V; T

GS

amb

amb

amb

Continuous source current (body diode)

(a)(d)

(c)

Pulsed source current (body diode)

Power dissipation at T

amb

=25°C

=25°C)

=70°C)

=25°C)

(b)

(b)(d)

(b)(d)

(a)(d)

DSS

GS

I

I

I

D

DM

I

S

SM

P

N-channel P-channel

30 -30 V

±20 ±20 V

7.6 -6.3 A

6.1 -5.0

5.8 -4.8

37 -30 A

3.6 3.2 A

37 30 A

D

Unit

1.25 W

Linear derating factor 10 mW/°C

Power dissipation at T

amb

=25°C

(a)(e)

P

D

1.8 W

Linear derating factor 14 mW/°C

Power dissipation at T

amb

=25°C

(b)(d)

P

D

2.1 W

Linear derating factor 17 mW/°C

Operating and storage temperature range T

j

, T

stg

-55 to +150 °C

Thermal resistance

Parameter Symbol

Junction to ambient

Junction to ambient

Junction to ambient

NOTES:

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air

conditions.
(b) For a device surface mounted on FR4 PCB measured at t 10 sec.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Pulse width 300

transient thermal impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.

(a)(d)

(a)(e)

(b)(d)

R

R

R

JA

JA

JA

Value

Unit

100 °C/W

70 °C/W

60 °C/W

s, d<= 0.02. Refer to

Issue 2 - September 2007 2 www.zetex.com

© Zetex Semiconductors plc 2007

Characteristics

ZXMC3A18DN8

Issue 2 - September 2007 3 www.zetex.com

© Zetex Semiconductors plc 2007

ZXMC3A18DN8

NOTES:

N-channel
Electrical characteristics (at T

Parameter Symbol Min. Typ. Max. Unit Conditions

Static

Drain-source breakdown
voltage

Zero gate voltage drain current I

Gate-body leakage I

Gate-source threshold voltage V

Static drain-source on-state

(*)

resistance

Forward transconductance

(*)(‡)

V

R

g

= 25°C unless otherwise stated)

amb

(BR)DSS

DSS

GSS

GS(th)

DS(on)

30 V ID= 250A, VGS=0V

0.5 AVDS=30V, VGS=0V

100 nA VGS=±20V, VDS=0V

1.0 V ID= 250A, VDS=V

0.025  VGS= 10V, ID= 5.8A

0.030 V

fs

17.5 S VDS= 15V, ID= 5.8A

= 4.5V, ID= 5.3A

GS

GS

Dynamic

(‡)

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Switching

(†) (‡)

Turn-on-delay time t

Rise time t

Turn-off delay time t

Fall time t

Gate charge Q

Total gate charge Q

Gate-source charge Q

Gate drain charge Q

Source-drain diode

Diode forward voltage

Reverse recovery time

Reverse recovery charge

(*)

(‡)

(‡)

iss

oss

rss

d(on)

r

d(off)

f

g

g

gs

gd

V

SD

t

rr

Q

rr

1800 pF VDS= 25V, VGS=0V

289 pF

f=1MHz

178 pF

5.5 ns VDD= 15V, ID= 6A
≅ 6.0, VGS= 10V

R

8.7 ns

G

33 ns

8.5 ns

19.4 nC VDS= 15V, VGS= 5V
= 3.5A

I

D

36 nC VDS= 15V, VGS= 10V

I

= 3.5A

5.5 nC

D

7.0 nC

0.95 V Tj=25°C, IS= 6A, VGS=0V

20.5 ns Tj=25°C, IS= 6A,

41.5 nC

di/dt=100A/s

(*) Measured under pulsed conditions. Pulse width 300s; duty cycle 2%.
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.

Issue 2 - September 2007 4 www.zetex.com

© Zetex Semiconductors plc 2007

Typical characteristics

ZXMC3A18DN8

Issue 2 - September 2007 5 www.zetex.com

© Zetex Semiconductors plc 2007

Typical characteristics

Current

regulator

Charge

Gate charge test circuit

Switching time test circuit

Basic gate charge waveform

Switching time waveforms

D.U.T

50k

12V

Same as

D.U.T

V

GS

V

GS

V

DS

V

G

Q

GS

Q

GD

Q

G

V

GS

90%

10%

t

(on)

t

(on)

t

d(on)tr

t

r

t

d(off)

V

DS

DD

V

R

D

R

G

V

DS

I

D

I

G

ZXMC3A18DN8

Issue 2 - September 2007 6 www.zetex.com

© Zetex Semiconductors plc 2007

ZXMC3A18DN8

NOTES:

P-channel
Electrical characteristics (at T

Parameter Symbol Min. Typ. Max. Unit Conditions

Static

= 25°C unless otherwise stated)

amb

Drain-source breakdown
voltage

Zero gate voltage drain current I

Gate-body leakage I

Gate-source threshold voltage V

Static drain-source on-state

(*)

resistance

Forward transconductance

Dynamic

(*)(‡)

(‡)

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Switching

(†) (‡)

Turn-on-delay time t

Rise time t

Turn-off delay time t

Fall time t

Gate charge Q

Total gate charge Q

Gate-source charge Q

Gate drain charge Q

Source-drain diode

Diode forward voltage

Reverse recovery time

Reverse recovery charge

(*)

(‡)

(‡)

V

(BR)DSS

DSS

GSS

GS(th)

R

DS(on)

g

fs

iss

oss

rss

d(on)

r

d(off)

f

g

g

gs

gd

V

SD

t

rr

Q

rr

-30 V ID= -250A, VGS=0V

-1.0 AVDS= -30V, VGS=0V

100 nA VGS=±20V, VDS=0V

-1.0 V ID= -250A, VDS=V

0.035 W VGS= -10V, ID= -4.8A

0.050 V

= -4.5V, ID= -4.0A

GS

8.6 S VDS= -15V, ID= -4.8A

1603 pF VDS= -15V, VGS=0V

434 pF

f=1MHz

388 pF

4.8 ns VDD= -15V, ID= -1A
@ 6.0, VGS= 10V

R

9.5 ns

G

60 ns

38 ns

25 nC VDS= -15V, VGS= -5V

= -4.8A

I

D

45 nC VDS= -15V, VGS= -10V

= -4.8A

I

5.1 nC

D

11.5 nC

0.82 -0.95 V Tj=25°C, IS= -3.7
=0V

V

GS

32.5 ns Tj=25°C, IS= -2.2,

18.4 nC

di/dt=100A/s

GS

(*) Measured under pulsed conditions. Pulse width 300s; duty cycle 2%.
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.

Issue 2 - September 2007 7 www.zetex.com

© Zetex Semiconductors plc 2007

Typical characteristics

ZXMC3A18DN8

Issue 2 - September 2007 8 www.zetex.com

© Zetex Semiconductors plc 2007

Typical characteristics

Current

regulator

Charge

Gate charge test circuit

Switching time test circuit

Basic gate charge waveform

Switching time waveforms

D.U.T

50k

0.2F

12V

Same as

D.U.T

V

GS

V

GS

V

DS

V

G

Q

GS

Q

GD

Q

G

V

GS

90%

10%

t

(on)

t

(on)

t

d(on)

t

r

tr t

d(off)

V

DS

V

DD

R

D

R

G

Pulse width  1S
Duty factor 0.1%

V

DS

I

D

I

G

ZXMC3A18DN8

Issue 2 - September 2007 9 www.zetex.com

© Zetex Semiconductors plc 2007

ZXMC3A18DN8

Intentionally left blank

Issue 2 - September 2007 10 www.zetex.com

© Zetex Semiconductors plc 2007

Package outline - SO8

ZXMC3A18DN8

DIM Inches Millimeters DIM Inches Millimeters

Min. Max. Min. Max. Min. Max. Min. Max.

A 0.053 0.069 1.35 1.75 e 0.050 BSC 1.27 BSC

A1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51

D 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25

H 0.228 0.244 5.80 6.20  0° 8° 0° 8°

E 0.150 0.157 3.80 4.00 h 0.010 0.020 0.25 0.50

L 0.016 0.050 0.40 1.27 - - - - -

Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters

Issue 2 - September 2007 11 www.zetex.com

© Zetex Semiconductors plc 2007

ZXMC3A18DN8

Definitions
Product change

Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or
service. Customers are solely responsible for obtaining the latest relevant information before placing orders.

Applications disclaimer

The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for
the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is
assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights
arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract,
tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract,
opportunity or consequential loss in the use of these circuit applications, under any circumstances.

Life support

Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written
approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:
A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body

or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to

cause the failure of the life support device or to affect its safety or effectiveness.

Reproduction

The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the
company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a
representation relating to the products or services concerned.

Terms and Conditions

All products are sold subjects to Zetex’ terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two
when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.
For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office.

Quality of product

Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer.
To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our
regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork
Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels.
ESD (Electrostatic discharge)
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices.
The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent
of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time.
Devices suspected of being affected should be replaced.

Green compliance

Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding reg­ulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce
the use of hazardous substances and/or emissions.
All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with
WEEE and ELV directives.

Product status key:

“Preview” Future device intended for production at some point. Samples may be available
“Active” Product status recommended for new designs
“Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs”
“Obsolete” Production has been discontinued

Datasheet status key:

“Draft version” This term denotes a very early datasheet version and contains highly provisional information, which

“Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.

“Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to

Zetex sales offices

Europe

Zetex GmbH
Kustermannpark
Balanstraße 59
D-81541 München
Germany
Telefon: [phone]
Fax: [phone]
[e-mail]

© 2007 Published by Zetex Semiconductors plc

Device is still in production to support existing designs and production

may change in any manner without notice.

However, changes to the test conditions and specifications may occur, at any time and without notice.

specifications may occur, at any time and without notice.

Americas

Zetex Inc
700 Veterans Memorial Highway
Hauppauge, NY 11788
USA

Telephone: [phone]
Fax: [phone]
[e-mail]

Asia Pacific

Zetex (Asia Ltd)
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong

Telephone: [phone]
Fax: [phone]
[e-mail]

Corporate Headquarters

Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
United Kingdom

Telephone: [phone]
Fax: [phone]
[e-mail]

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© Zetex Semiconductors plc 2007