Diodes ZXMC3A17DN8 User Manual

ZXMC3A17DN8

COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET

SUMMARY N-Channel : V P-Channel : V

(BR)DSS

= 30V : R

= -30V : R

DESCRIPTION

This new generation of trench MOSFETs from Zetex utilizesauniquestructurethat combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

Low on-resistance

•

Fast switching speed

•

Low threshold

•

Low gate drive

•

Low profile SOIC package

= 0.050 ; ID= 5.4A

DS(on)

= 0.070 ; ID= -4.4A

DS(on)

8

O

S

APPLICATIONS

•

Motor drive

•

LCD backlighting

Q1 = N-channel

ORDERING INFORMATION

DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL

ZXMC3A17DN8TA 7” 12mm 500 units

ZXMC3A17DN8TC 13” 12mm 2500 units

DEVICE MARKING

•

ZXMC 3A17

ISSUE 1 - OCTOBER 2005

1

Q2 = P-channel

PINOUT

Top View

SEMICONDUCTORS

ZXMC3A17DN8

ADVANCE INFORMATION

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL N-channel P-channel UNIT

Drain-Source Voltage V

Gate-Source Voltage V

Continuous Drain Current

= 10V; TA=25°C)

(V

GS

(VGS= 10V; TA=70°C) (VGS= 10V; TA=25°C)

Pulsed Drain Current

(c)

Continuous Source Current (Body Diode)

Pulsed Source Current (Body Diode)

(a) (d)

Power Dissipation at T

=25°C

A

(b)(d)

(a)(d)

(b)

(c)

Linear Derating Factor

(a) (e)

Power Dissipation at T

=25°C

A

Linear Derating Factor

(b) (d)

Power Dissipation at T

=25°C

A

Linear Derating Factor

Operating and Storage Temperature Range T

DSS

GS

I

D

I

DM

I

S

I

SM

P

D

P

D

P

D

j,Tstg

30 -30 V

±20 ±20 V

5.4

4.3

4.1

-4.4

-3.6

-3.4

23 -20 A

2.6 -2.5 A

23 -20 A

1.25

10

1.8

14

2.1

17

-55 to +150 °C

A

W

mW/°C

W

mW/°C

W

mW/°C

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient

NOTES:

(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a dual device surface mounted on FR4 PCB measured at t ⱕ 10 sec. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width = 300␮s - pulse width limited by maximum junction temperature. (d) For a dual device with one active die. (e) For dual device with two active die running at equal power.

SEMICONDUCTORS

(a) (d)

(a) (e)

(b) (d)

R

⍜JA

100 °C/W

70 °C/W

60 °C/W

ISSUE 1 - OCTOBER 2005

2

ADVANCE INFORMATION

ZXMC3A17DN8

CHARACTERISTICS

ISSUE 1 - OCTOBER 2005

3

SEMICONDUCTORS