Diodes ZXMC3A16DN8 User Manual

ZXMC3A16DN8

COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET

SUMMARY
N-Channel V

P-Channel V

(BR)DSS

(BR)DSS

= 30V; R

= -30V; R

DESCRIPTION

This new generation of trench MOSFETs from Zetex utilizes a unique structure
that combinesthe benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.

= 0.035 ;ID= 6.4A

DS(ON)

= 0.048 ;ID= -5.4A

DS(ON)

FEATURES

Low on-resistance

•

Fast switching speed

•

Low threshold

•

Low gate drive

•

Low profile SOIC package

•

APPLICATIONS

•

Motor Drive

•

LCD backlighting

ORDERING INFORMATION

DEVICE REEL TAPE

ZXMC3A16DN8TA 7

ZXMC3A16DN8TC 13’‘ 12mm 2500 units

WIDTH

’‘ 12mm 500 units

QUANTITY

PER REEL

DEVICE MARKING

ZXMC
3A16

SO8

Q2 = P-CHANNELQ1 = N-CHANNEL

PINOUT

ISSUE 1 - OCTOBER 2005

Top view

1

ZXMC3A16DN8

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL N-Channel P-Channel UNIT

Drain-Source Voltage V

Gate-Source Voltage V

Continuous Drain Current@V

=10V; TA=25⬚C

GS

@VGS=10V; TA=70⬚C
@VGS=10V; TA=25⬚C

Pulsed Drain Current

(c)

Continuous Source Current (Body Diode)

Pulsed Source Current (Body Diode)

Power Dissipation at TA=25°C

(c)

(a)(d)

(b)(d)
(b)(d)
(a)(d)

(b)

Linear Derating Factor

Power Dissipation at TA=25°C

(a)(e)

Linear Derating Factor

Power Dissipation at TA=25°C

(b)(d)

Linear Derating Factor

Operating and Storage Temperature Range T

DSS

GS

I

D

I

DM

I

S

I

SM

P

D

P

D

P

D

j:Tstg

30 -30 V

⫾20 ⫾20 V

6.4

5.1

4.9

-5.4

-4.3

-4.1

30 -25 A

3.4 -3.2 A

30 -25 A

1.25
10

mW/°C

1.8
14

mW/°C

2.1
17

mW/°C

-55 to +150 °C

A
A
A

W

W

W

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient

Junction to Ambient

Junction to Ambient

Notes

(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.

(b) For a dual device surface mounted on FR4 PCB measured at t ⱕ10 sec.

(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs - pulse width limited by maximum junction temperature.

(d) For a dual device with one active die.

(e) For dual device with 2 active die running at equal power.

(a)(d)

(b)(e)

(b)(d)

R

θJA

R

θJA

R

θJA

100 °C/W

70 °C/W

60 °C/W

ISSUE 1 - OCTOBER 2005

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CHARACTERISTICS

ZXMC3A16DN8

ISSUE 1 - OCTOBER 2005

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