Diodes ZXMC10A816N8 User Manual

G

Y

W

100V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Product Summary

I

(A)max

Device

Q1 100V

Q2 -100V

V

(BR)DSS

R

DS(ON)

0.230 @ V

0.300 @ VGS= 4.5V

0.235 @ V

0.320 @ VGS= -4.5V

(Ω)max

= 10V

GS

= -10V

GS

D

= +25°C

T

A

2.1

1.9

-2.2

-1.9

Description

This new generation complementary dual MOSFET features low on-

resistance achievable with low gate drive.

Applications

 DC Motor Control

 Backlighting

SO-8

G1

S2

G2

Top View

ZXMC10A816N8

Features

 100V Complementary in SOIC package

 Low On-Resistance

 Fast Switching Speed

 Low Voltage (V

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

= 4.5V) gate drive

GS

Mechanical Data

 Case: SO-8

 Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

 Weight: 0.074 grams (approximate)

D1S1

1

D1

D2

Q1 N-Channel Q2 P-Channel

Top view

Top View

D2

D1

S1

Equivalent Circuit

e3

G2

D2

S2

Ordering Information (Note 4)

Product Reel size (inches) Tape width (mm) Quantity per reel

ZXMC10A816N8 13 12 2,500

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.

Marking Information

ZXMC10A816N8

Document number: DS33497 Rev. 2 - 2

Top View

8 5

ZXMC

10A816

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Part no.

Xth week: 01 ~ 53

Year: “11” = 2011

March 2013

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Parameter Symbol

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current @ VGS= 10V; TA= +25°C @ V @ V

= 10V; TA= +70°C

GS

= 10V; TA= +25°C

GS

@ VGS= 10V; TA= +25°C @ V

Pulsed Drain Current @ V

= 10V; TL= +25°C

GS

= 10V; TA = +25°C

GS

(c)(d)

Continuous Source Current (Body Diode) at TA = +25°C

Pulsed Source Current (Body Diode) at TA = +25°C

Avalanche Current (g) L = 0.1 mH

Power Dissipation at TA = +25°C

(a)(d)

Linear Derating Factor

Power Dissipation at TA = +25°C

(a)(e)

Linear Derating Factor

Power Dissipation at TA = +25°C

(b)(d)

Linear Derating Factor

Power Dissipation at TL = +25°C

(f)(d)

Linear Derating Factor

Operating and Storage Temperature Range

ZXMC10A816N8

N-channel

Q1

V

DSS

V

(b)(d)

(a)(d)

(a)(e)

(f)(d)

I

(b)(d)

I

(c)(d)

ISM

GS

I

D

DM

S

I

AS

P

D

P

D

P

D

P

D

T

, T

j

stg

100 -100

20 20 V

2.1

1.7

2.0

2.3

9.4 -10.5

3.0 -3.1

9.4 -10.5

1.2 12

2.4

18.9

P-channel

Q2

-2.2

-1.8

-1.7

-2.0

-2.4

1.3

10.0

1.8

14.2

2.1

16.7

2.6

20.4

-55 to +150

Unit

V

A

W

mW/C

W

mW/C

W

mW/C

W

mW/C

C

Thermal Characteristics

Parameter Symbol Value Unit

= +25°C.

J

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R

JA



R

JA



R

JA



R

JL



100

70

60

53 49

C/W

March 2013

(f)(d)

(a)(d)

(a)(e)

(b)(d)

Junction to Ambient

Junction to Lead

Notes: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition.

(b) Same as note (a), except the device is measured at t  10 sec. (c) Same as note (a), except the device is pulsed with D= 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature. (d) For a dual device with one active die. (e) For a device with two active die running at equal power. (f) Thermal resistance from junction to solder-point (at the end of the drain lead); the device is operating in a steady-state condition. (g) IAS rating are based on low frequency and duty cycles to keep T

ZXMC10A816N8

Document number: DS33497 Rev. 2 - 2

Thermal Characteristics

10

R

DS(ON)

Limited

1

DC

100m

Note (a)(d)

Drain Current (A)

D

10m

I

Single Pulse, T

0.1 1 10 100

VDS Drain-Source Voltage (V)

N-channel Safe Operating Area

1s

amb

100ms

=25°C

10ms

1ms

100us

ZXMC10A816N8

10

R

DS(ON)

Limited

1

DC

100m

Note (a)(d)

Drain Current (A)

D

10m

Single Pulse, T

-I

0.1 1 10 100

-VDS Drain-Source Voltage (V)

P-channel Safe Operating Area

1s

amb

100ms

=25°C

10ms

1ms

100us

100

80

D=0.5

60

40

D=0.2

20

Thermal Resistance (°C/W)

0

100µ 1m 10m 100m 1 10 100 1k

Single Pulse

D=0.05

D=0.1

Pulse Width (s)

Transient Thermal Impedance

Single Pulse T

100

10

1

Maximum Power (W)

amb

=25°C

2.0

1.5

1.0

0.5

0.0 0 25 50 75 100 125 150

Max Power Dissipation (W)

Temperature (°C)

Two active die

One active die

Derating Curve

100µ 1m 10m 100m 1 10 100 1k

Pulse Power Dissipation

ZXMC10A816N8

Document number: DS33497 Rev. 2 - 2

Pulse Width (s)

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Electrical Characteristics Q1 N-Channel (@T

= +25°C, unless otherwise specified.)

A

Parameter Symbol Min Typ Max Unit Conditions

Static

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

Gate-Source Threshold Voltage

Static Drain-Source On-State Resistance

Forward Transconductance

Dynamic Capacitance

(a) (c)

(c)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Switching

(b) (c)

Turn-On-Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Gate Charge

(c)

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

(a)

R

DS(ON)

g

fs

C

iss

C

oss

C

rss

t

d(ON)

t

r

t

d(OFF)

t

f

Q

g

Q

gs

Q

gd

100 — — V

— — 0.5 µA

— — 100 nA

1.7 — 2.4 V

—

0.170

0.210

— 4.8

— 497 — pF

— 29 — pF

— 18 — pF

— 2.9 — ns

— 2.1 — ns

— 12.1 — ns

— 5.0 — ns

— 9.2 — nC

— 1.7 — nC

— 2.5 — nC

Source–Drain Diode

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

(a)

(c)

V

SD

t

rr

Q

rr

— 0.85 0.95 V

— 32 — ns

— 40 — nC

Gate Resistance

Notes: (a) Measured under pulsed conditions. Pulse width  300s; duty cycle  2%. (b) Switching characteristics are independent of operating junction temperature. (c) For design aid only, not subject to production testing.

R

G

ZXMC10A816N8

Document number: DS33497 Rev. 2 - 2

0 — 3 

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0.230

0.300

—

ZXMC10A816N8

I

= 250µA, VGS = 0V

D

V

= 100V, VGS = 0V

DS

VGS = 20V, VDS = 0V

ID = 250µA, VDS = VGS

V

= 10V, ID = 1.0A



S

GS

= 4.5V, ID = 0.5A

V

GS

V

= 15V, ID= 1.6A

DS

V

= 50V, VGS = 0V

DS

f = 1MHz

= 50V, VGS = 10V

V

DD

= 1.0A

I

D

 6.0,

R

G

V

= 50V, VGS = 10V

DS

= 1.6A

I

D

IS = 1.7A, VGS = 0V

= 1.7A, di/dt = 100A/s

I

S

VDS = 0V, VGS = 0V, f = 1.0MHz

March 2013