Page 1
G
Y
W
100V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
I
(A)max
Device
Q1 100V
Q2 -100V
V
(BR)DSS
R
DS(ON)
0.230 @ V
0.300 @ VGS= 4.5V
0.235 @ V
0.320 @ VGS= -4.5V
(Ω)max
= 10V
GS
= -10V
GS
D
= +25°C
T
A
2.1
1.9
-2.2
-1.9
Description
This new generation complementary dual MOSFET features low on-
resistance achievable with low gate drive.
Applications
DC Motor Control
Backlighting
SO-8
G1
S2
G2
Top View
ZXMC10A816N8
Features
100V Complementary in SOIC package
Low On-Resistance
Fast Switching Speed
Low Voltage (V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
= 4.5V) gate drive
GS
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
D1S1
1
D1
D2
Q1 N-Channel Q2 P-Channel
Top view
Top View
D2
D1
S1
Equivalent Circuit
e3
G2
D2
S2
Ordering Information (Note 4)
Product Reel size (inches) Tape width (mm) Quantity per reel
ZXMC10A816N8 13 12 2,500
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
ZXMC10A816N8
Document number: DS33497 Rev. 2 - 2
Top View
8 5
ZXMC
10A816
Y W
1 4
1 of 11
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Logo
Part no.
Xth week: 01 ~ 53
Year: “11” = 2011
March 2013
© Diodes Incorporated
Page 2
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Parameter Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS= 10V; TA= +25°C
@ V
@ V
= 10V; TA= +70°C
GS
= 10V; TA= +25°C
GS
@ VGS= 10V; TA= +25°C
@ V
Pulsed Drain Current @ V
= 10V; TL= +25°C
GS
= 10V; TA = +25°C
GS
(c)(d)
Continuous Source Current (Body Diode) at TA = +25°C
Pulsed Source Current (Body Diode) at TA = +25°C
Avalanche Current (g) L = 0.1 mH
Power Dissipation at TA = +25°C
(a)(d)
Linear Derating Factor
Power Dissipation at TA = +25°C
(a)(e)
Linear Derating Factor
Power Dissipation at TA = +25°C
(b)(d)
Linear Derating Factor
Power Dissipation at TL = +25°C
(f)(d)
Linear Derating Factor
Operating and Storage Temperature Range
ZXMC10A816N8
N-channel
Q1
V
DSS
V
(b)(d)
(b)(d)
(a)(d)
(a)(e)
(f)(d)
I
(b)(d)
I
(c)(d)
ISM
GS
I
D
DM
S
I
AS
P
D
P
D
P
D
P
D
T
, T
j
stg
100 -100
20 20 V
2.1
1.7
1.7
2.0
2.3
9.4 -10.5
3.0 -3.1
9.4 -10.5
1.2 12
2.4
18.9
P-channel
Q2
-2.2
-1.8
-1.7
-2.0
-2.4
1.3
10.0
1.8
14.2
2.1
16.7
2.6
20.4
-55 to +150
Unit
V
A
A
A
A
A
W
mW/C
W
mW/C
W
mW/C
W
mW/C
C
Thermal Characteristics
Parameter Symbol Value Unit
= +25°C.
J
2 of 11
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R
JA
R
JA
R
JA
R
JL
100
70
60
53 49
C/W
C/W
C/W
C/W
March 2013
© Diodes Incorporated
(f)(d)
(a)(d)
(a)(e)
(b)(d)
Junction to Ambient
Junction to Ambient
Junction to Ambient
Junction to Lead
Notes: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
(b) Same as note (a), except the device is measured at t 10 sec.
(c) Same as note (a), except the device is pulsed with D= 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
(d) For a dual device with one active die.
(e) For a device with two active die running at equal power.
(f) Thermal resistance from junction to solder-point (at the end of the drain lead); the device is operating in a steady-state condition.
(g) IAS rating are based on low frequency and duty cycles to keep T
ZXMC10A816N8
Document number: DS33497 Rev. 2 - 2
Page 3
Thermal Characteristics
10
R
DS(ON)
Limited
1
DC
100m
Note (a)(d)
Drain Current (A)
D
10m
I
Single Pulse, T
0.1 1 10 100
VDS Drain-Source Voltage (V)
N-channel Safe Operating Area
1s
amb
100ms
=25°C
10ms
1ms
100us
ZXMC10A816N8
10
R
DS(ON)
Limited
1
DC
100m
Note (a)(d)
Drain Current (A)
D
10m
Single Pulse, T
-I
0.1 1 10 100
-VDS Drain-Source Voltage (V)
P-channel Safe Operating Area
1s
amb
100ms
=25°C
10ms
1ms
100us
100
80
D=0.5
60
40
D=0.2
20
Thermal Resistance (°C/W)
0
100µ 1m 10m 100m 1 10 100 1k
Single Pulse
D=0.05
D=0.1
Pulse Width (s)
Transient Thermal Impedance
Single Pulse
T
100
10
1
Maximum Power (W)
amb
=25°C
2.0
1.5
1.0
0.5
0.0
0 25 50 75 100 125 150
Max Power Dissipation (W)
Temperature (°C)
Two active die
One active die
Derating Curve
100µ 1m 10m 100m 1 10 100 1k
Pulse Power Dissipation
ZXMC10A816N8
Document number: DS33497 Rev. 2 - 2
Pulse Width (s)
3 of 11
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© Diodes Incorporated
Page 4
Electrical Characteristics Q1 N-Channel (@T
= +25°C, unless otherwise specified.)
A
Parameter Symbol Min Typ Max Unit Conditions
Static
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
Forward Transconductance
Dynamic Capacitance
(a) (c)
(c)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
(b) (c)
Turn-On-Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
(c)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
(a)
R
DS(ON)
g
fs
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
100 — — V
— — 0.5 µA
— — 100 nA
1.7 — 2.4 V
—
0.170
0.210
— 4.8
— 497 — pF
— 29 — pF
— 18 — pF
— 2.9 — ns
— 2.1 — ns
— 12.1 — ns
— 5.0 — ns
— 9.2 — nC
— 1.7 — nC
— 2.5 — nC
Source–Drain Diode
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
(a)
(c)
(c)
V
SD
t
rr
Q
rr
— 0.85 0.95 V
— 32 — ns
— 40 — nC
Gate Resistance
Gate Resistance
Notes: (a) Measured under pulsed conditions. Pulse width 300s; duty cycle 2%.
(b) Switching characteristics are independent of operating junction temperature.
(c) For design aid only, not subject to production testing.
R
G
ZXMC10A816N8
Document number: DS33497 Rev. 2 - 2
0 — 3
4 of 11
www.diodes.com
0.230
0.300
—
ZXMC10A816N8
I
= 250µA, VGS = 0V
D
V
= 100V, VGS = 0V
DS
VGS = 20V, VDS = 0V
ID = 250µA, VDS = VGS
V
= 10V, ID = 1.0A
S
GS
= 4.5V, ID = 0.5A
V
GS
V
= 15V, ID= 1.6A
DS
V
= 50V, VGS = 0V
DS
f = 1MHz
= 50V, VGS = 10V
V
DD
= 1.0A
I
D
6.0,
R
G
V
= 50V, VGS = 10V
DS
= 1.6A
I
D
IS = 1.7A, VGS = 0V
= 1.7A, di/dt = 100A/s
I
S
VDS = 0V, VGS = 0V, f = 1.0MHz
March 2013
© Diodes Incorporated
Page 5
Typical Characteristics Q1 N-Channel
Drain Curr ent (A)
I
T = 25°C
10
1
0.1
Drain Current (A)
D
I
0.01
0.1 1 10
VDS Drai n-Sour ce Voltage (V)
Output Characteristics
1
0.1
D
0.01
2.0 2.5 3.0 3.5 4.0 4.5
T = 150°C
VGS Gate-Source Volt age (V)
Typical Transfer Characteristics
3V
10
1
Drai n-So ur ce On-Resist ance
0.1
0.01 0.1 1 10
DS(on )
R
ID Drain Current (A)
On-Resistance v Drain Current
10V
V
GS
5V
T = 25°C
VDS = 10V
T = 25°C
3.5V
4V
ZXMC10A816N8
Document number: DS33497 Rev. 2 - 2
4.5V
4V
3.5V
V
GS
3V
Normalised Curves v Temperature
4.5V
5V
10V
Source-Drain Diode Forward Volt age
5 of 11
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ZXMC10A816N8
T = 150°C
10
1
0.1
Drain Current (A)
D
I
0.01
0.1 1 10
VDS Drain-Sour ce Voltage (V)
Output Characteristics
2.2
2.0
1.8
GS(th )
1.6
and V
1.4
DS(on)
1.2
1.0
0.8
0.6
Normalised R
0.4
-50 0 50 100 150
Tj Junction Temperature (°C)
10
T = 150°C
1
0.1
Reverse Drai n Curr ent (A)
SD
I
0.01
0.2 0.4 0.6 0.8 1.0 1.2
Sou r ce-Drai n Vol t age (V)
V
SD
10V
VGS = V
DS
ID = 250uA
T = 25°C
VGS = 10V
ID = 1.6A
5V
4.5V
4V
3.5V
3V
V
GS
2.5V
R
DS(on )
V
GS(th)
© Diodes Incorporated
March 2013
Page 6
Typical Characteristics Q1 N-Channel (cont.)
700
600
500
400
300
C
ISS
C
OSS
200
100
C Cap aci tan ce (pF)
0
0.1 1 10 100
VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
VGS = 0V
f = 1MHz
C
RSS
10
ID = 1.6A
8
6
4
2
Gate-Source Voltage (V)
0
GS
0246810
V
Q - Charge (nC)
VDS = 50V
Gate-Source Voltage v Gate Charge
ZXMC10A816N8
Test Circuits
V
90%
10%
V
Current
Q
G
12V
Q
GS
V
G
Q
GD
regulator
50k
I
G
V
GS
Same as
D.U.T
D.U.T
V
DS
I
D
Charge
Basic gate charge waveform
DS
GS
t
d(on)tr
t
(on)
t
t
d(off)
r
t
(on)
Gate charge test circuit
R
D
V
GS
R
G
V
DS
V
DD
Switching time waveforms
ZXMC10A816N8
Document number: DS33497 Rev. 2 - 2
6 of 11
www.diodes.com
Switching time test circuit
March 2013
© Diodes Incorporated
Page 7
Electrical Characteristics Q2 P-Channel (@T
= +25°C, unless otherwise specified.)
A
Parameter Symbol Min Typ Max Unit Conditions
Static
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
Forward Transconductance
Dynamic Capacitance
(a) (c)
(c)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
(b) (c)
Turn-On-Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
(c)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
(a)
R
DS(ON)
g
fs
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
-100 — — V
— — -0.5 µA
— — 100 nA
-2.0 — -3.0 V
—
0.170
0.250
— 4.7 — S
— 717 — pF
— 55 — pF
— 46 — pF
— 4.3 — ns
— 5.2 — ns
— 20 — ns
— 12 — ns
— 16.5 — nC
— 2.5 — nC
— 5.4 — nC
Source–Drain Diode
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
(a)
(c)
(c)
V
SD
t
rr
Q
rr
— -0.85 -0.95 V
— 43 — ns
— 77 — nC
Gate Resistance
Gate Resistance
Notes: (a) Measured under pulsed conditions. Pulse width 300s; duty cycle 2%.
(b) Switching characteristics are independent of operating junction temperature.
(c) For design aid only, not subject to production testing.
R
G
ZXMC10A816N8
Document number: DS33497 Rev. 2 - 2
0 — 100
7 of 11
www.diodes.com
0.235
0.320
ZXMC10A816N8
I
= -250µA, V
D
V
= -100V, V
DS
V
= 20V, V
GS
ID = -250µA, V
V
= -10V, ID = -1.0A
GS
= -4.5V, ID = -0.5A
V
GS
V
= -15V, ID = -2.1A
DS
V
= -50V, VGS = 0V
DS
f = 1MHz
V
= -50V, VGS = -10V
DD
= -1A
I
D
6.0,
R
G
= -50V, VGS = -10V
V
DS
= -2.1A
I
D
IS = -1.7A, VGS = 0V
= -1.7A, di/dt = 100A/s
I
S
VDS = 0V, VGS = 0V, f = 1.0MHz
= 0V
GS
= 0V
GS
= 0V
DS
= VGS
DS
© Diodes Incorporated
March 2013
Page 8
Typical Characteristics Q2 P-Channel
T = 25°C
10
1
0.1
Drain Current (A)
D
-I
0.1 1 10
-VDS Drain-Source Voltage (V)
Output Characteristics
10V
5V
4.5V
4V
3.5V
-V
ZXMC10A816N8
T = 150°C
10
1
0.1
Drain Current (A)
GS
D
-I
0.01
0.1 1 10
-VDS Drain-Source Voltage (V)
Output Characteristics
10V
-V
5V
4.5V
4V
3.5V
3V
GS
T = 150°C
1
Drain Current (A)
D
-I
T = 25°C
-VDS = 10V
3.0 3.5 4.0 4.5 5.0
-VGS Gate-Source Voltage (V)
Typical Transfer Characteristics
-V
10
1
Drain-Source On-Resistance
0.1
0.1 1 10
DS(on)
R
3.5V
GS
-ID Drain Current (A)
T = 25°C
4V
4.5V
5V
On-Resistance v Drain Current
7V
10V
2.0
1.8
GS(th)
1.6
1.4
and V
1.2
DS(on)
VGS = -10V
ID = - 2.1A
1.0
0.8
0.6
Normalised R
VGS = V
DS
ID = -250uA
-50 0 50 100 150
Tj Junction Temperature (°C)
Normalised Curves v Temperature
10
1
0.1
0.01
Reverse Drain Current (A)
SD
-I
1E-3
0.2 0.4 0.6 0.8 1.0
Source-Drain Diode Forward Voltage
T = 150°C
Source-Drain Voltage (V)
-V
SD
T = 25°C
R
DS(on)
V
GS( th)
ZXMC10A816N8
Document number: DS33497 Rev. 2 - 2
8 of 11
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March 2013
© Diodes Incorporated
Page 9
C
g
Typical Characteristics Q2 P-Channel (cont.)
1000
800
C
600
400
ISS
C
OSS
200
C Capacitance (pF)
0
0.1 1 10 100
-VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
VGS = 0V
f = 1MHz
C
RSS
ZXMC10A816N8
10
ID = -2.1A
8
6
4
2
VDS = -50V
Gate-Source Voltage (V)
0
0 2 4 6 8 1012141618
GS
-V
Gate-Source Voltage v Gate Charge
Q - Charge (nC)
Test Circuits
urrent
Q
G
12V
Q
GS
V
G
Basic gate charge waveform
tr t
t
(on)
d(off)
Q
GD
Charge
Gate charge test circuit
V
DS
90%
R
10%
V
GS
t
t
d(on)
r
t
(on)
Pulse width ⬍ 1S
Duty factor 0.1%
regulator
50k
0.2F
V
GS
G
Same as
D.U.T
V
I
G
D.U.T
V
GS
R
D
DS
I
D
V
DS
V
DD
Switching time waveforms
ZXMC10A816N8
Document number: DS33497 Rev. 2 - 2
9 of 11
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Switchin
time test circuit
March 2013
© Diodes Incorporated
Page 10
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
E1
E
A1
Detail ‘A’
L
0.254
Gauge Plane
Seating Plane
7°~9
°
Detail ‘A’
A3
h
°
45
e
b
D
A2
A
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
C2
Y
C1
Dimensions Value (in mm)
X 0.60
Y 1.55
C1 5.4
C2 1.27
ZXMC10A816N8
Dim Min Max
SO-8
A - 1.75
A1 0.10 0.20
A2 1.30 1.50
A3 0.15 0.25
b 0.3 0.5
D 4.85 4.95
E 5.90 6.10
E1 3.85 3.95
e 1.27 Typ
h - 0.35
L 0.62 0.82
0 8
All Dimensions in mm
ZXMC10A816N8
Document number: DS33497 Rev. 2 - 2
10 of 11
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March 2013
© Diodes Incorporated
Page 11
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com
ZXMC10A816N8
ZXMC10A816N8
Document number: DS33497 Rev. 2 - 2
11 of 11
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March 2013
© Diodes Incorporated
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