Diodes ZXM66P03N8 User Manual
30V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXM66P03N8
SUMMARY
V
(BR)DSS
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
•
•
•
•
•
APPLICATIONS
=-30V; R
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
=0.025 ; ID=-7.9A
DS(ON)
• DC - DC converters
•
Power management functions
•
Disconnect switches
•
Motor control
ORDERING INFORMATION
DEVICE REEL SIZE TAPE WIDTH QUANTITY
ZXM66P03N8TA 7” 12mm 500 units
ZXM66P03N8TC 13” 12mm 2500 units
DEVICE MARKING
•
ZXM
66P03
PER REEL
SO8
8
S
S
S
1
23
4
Top View
D
76
D
D
5
ISSUE 1 - JANUARY 2006
1
SEMICONDUCTORS
ZXM66P03N8
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate- Source Voltage V
Continuous Drain Current VGS=-10V; TA=25°C(b)
VGS=-10V; TA=70°C(b)
VGS=-10V; TA=25°C(a)
Pulsed Drain Current (c) I
Continuous Source Current (Body Diode)(b) I
Pulsed Source Current (Body Diode)(c) I
Power Dissipation at TA=25°C (a)
Linear Derating Factor
Power Dissipation at TA=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range Tj:T
DSS
GS
I
D
DM
S
SM
P
D
P
D
stg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a)
Junction to Ambient (b)
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum junction temperature.
R
R
θJA
θJA
-30 V
±20
-7.9
-6.3
-6.25
-28 A
-4.1 A
-28 A
1.56
12.5
2.5
20
-55 to +150 °C
80 °C/W
50 °C/W
mW/°C
mW/°C
V
A
W
W
SEMICONDUCTORS
ISSUE 1 - JANUARY 2006
2
Loading...