Diodes ZXM64P03X User Manual

A

f

A

D

Product Summary

Max I

V

Max R

(BR)DSS

-30V

DS(on)

75mΩ @ V

100mΩ @ VGS = -4.5V

= -10V

GS

T

= 25°C

-3.8A

-3.3A

D

Description

This MOSFET utilizes a unique structure that combines the benefits
of low on-resistance with fast switching speed, making it ideal for
high-efficiency power management applications.

Applications

• DC - DC converters

• Power management functions

• Disconnect switches

• Motor control

MSOP8

Top View

Product Line o

Diodes Incorporated

ZXM64P03X

30V P-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Fast switching speed

• Low on-resistance

• Low threshold

• Low gate drive

• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: MSOP8

• Case Material: Molded Plastic, UL Flammability Classification

Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish; Solderable per MIL-STD-202,

Method 208

• Weight: 0.028 grams (approximate)

G

S

Top View

Pin Out

Equivalent Circuit

Ordering Information (Note 4)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXM64P03XTA

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

ZXM64P03 7 12 1,000 Units

Marking Information

ZXM64P03X

Document Number DS33487 Rev. 2 - 2

www.diodes.com

ZXM64P03 = Product Type Marking Code

1 of 7

October 2012

© Diodes Incorporated

A

f

Product Line o

Diodes Incorporated

ZXM64P03X

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current

V

GS

= 4.5V

T

T
Pulsed Drain Current (Note 7)
Continuous Source Current (Body Diode) (Note 6)
Pulsed Source Current (Body Diode) (Note 7)

= +25°C (Note 5)

A

= +70°C (Note 5)

A

V

DSS

V

GS

I

D

I

DM

I

S

I

SM

-30 V

±20 V

-3.8

-3.0

-1.9 A

-2.3 A

-19 A

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Power Dissipation (Note 5)
Linear Derating Factor
Power Dissipation (Note 6)
Linear Derating Factor

Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Ambient (Note 8)
Operating and Storage Temperature Range

Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions

6. For a device surface mounted on FR4 PCB measured at t 10 secs.

7. Repetitive rating pulse width limited by pulse current limited by maximum junction temperature.

8. Thermal resistance from junction to solder-point (at the end of the Drain lead).

R
R
R

T

J, TSTG

P

D

P

D

JA
JA
JL

1.1

8.8

1.8

14.4
113 °C/W

70 °C/W

39.8 °C/W

-55 to +150 °C

A

W

mW/°C

W

mW/°C

Thermal Characteristics

ZXM64P03X

Document Number DS33487 Rev. 2 - 2

2 of 7

www.diodes.com

October 2012

© Diodes Incorporated

A

f

)

r

r

)

r

)

g

g

g

Product Line o

Diodes Incorporated

ZXM64P03X

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I
I

DSS
DSS
GSS

-30

⎯ ⎯
⎯ ⎯
⎯ ⎯

V

ID = -250μA, VGS = 0V

-1

±100 nA

μA

V
VGS = ±20V, VDS = 0V

= -30V, VGS = 0V

DS

ON CHARACTERISTICS

Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 9)
Forward Transconductance (Notes 9 and 11)

Diode Forward Voltage (Note 9)
Reverse Recovery Time (Note 11)
Reverse Recovery Charge (Note 11)

V

GS(th

R

DS (ON)

V

g

fs

SD

t

r

Q

r

-1.0
⎯ ⎯

2.3

⎯ ⎯

⎯

⎯

⎯ ⎯

⎯ ⎯

30.2

27.8

V

ID = -250μA, VDS = VGS

75

100

-0.95 V

⎯
⎯

V

m

V

S

VDS = -10V, ID = -1.2A
TJ = +25°C, IS = -2.4A, VGS = 0V

ns

T
di/dt = 100A/μs

nC

= -10V, ID = -2.4A

GS

= -4.5V, ID = -1.2A

GS

= +25°C, IF = -2.4A,

J

DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time (Note 10)
Turn-On Rise Time (Note 10)
Turn-Off Delay Time (Note 10)
Turn-Off Fall Time (Note 10)
Total Gate Charge (Note 10)
Gate-Source Charge (Note 10)
Gate-Drain Charge (Note 10)

Notes: 9. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle  2%.

10. Switching characteristics are independent of operating junction temperature.

11. For design aid only, not subject to production testing.

C
C

t

t

C

d(on

d(off

Q
Q
Q

iss
oss
rss

t

t

f

s
d

⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯ ⎯
⎯
⎯ ⎯

825
250

80

4.4

6.2
40

29.2

⎯

⎯
⎯
⎯
⎯
⎯
⎯
⎯

46

9

11.5

V

pF

ns

DS

f = 1.0MHz

V

DD

= 6.2, RD = 6.2

R

G

(Refer to test circuit)

V

nC

DS

I

= -2.4A

D

(Refer to test circuit)

= -25V, VGS = 0V

= -15V, ID = -2.4A,

= -24V, VGS = -10V,

ZXM64P03X

Document Number DS33487 Rev. 2 - 2

3 of 7

www.diodes.com

October 2012

© Diodes Incorporated