Diodes ZXM64P02X User Manual

20V P-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY
V

(BR)DSS

DESCRIPTION

This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.

FEATURES

• Low on-resistance

• Fast switching speed

• Low threshold

• Low gate drive

• Low profile SOIC package

APPLICATIONS

• DC - DC Converters

• Power Management Functions

• Disconnect switches

• Motor control

ORDERING INFORMATION

DEVICE REEL SIZE

ZXM64P02XTA 7 12mm embossed 1000 units

ZXM64P02XTC 13 12mm embossed 4000 units

=-20V; R

DS(ON)

(inches)

=0.090V; ID= -3.5A

TAPE WIDTH (mm) QUANTITY

PER REEL

ZXM64P02X

MSOP8

S
S
S
G

1234

Top View

8

7

65

D
D
D
D

DEVICE MARKING

• ZXM64P02

- February 2008

Issue 2

1

ZXM64P02X

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate- Source Voltage V
Continuous Drain Current (V

(V

=4.5V; TA=25°C)(b)

GS

=4.5V; TA=70°C)(b)

GS

Pulsed Drain Current (c) I
Continuous Source Current (Body Diode)(b) I

Pulsed Source Current (Body Diode)(c) I

Power Dissipation at T
Linear Derating Factor

Power Dissipation at T
Linear Derating Factor

=25°C (a)

A

=25°C (b)

A

Operating and Storage Temperature Range T

I

D

DM

S

SM

P

P

DSS

GS

D

D

j:Tstg

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient (a) R

Junction to Ambient (b) R

θJA

θJA

-20 V

± 12

-3.5

-2.8

-19 A

-2.0 A

-19 A

1.1

8.8

mW/°C

1.8

14.4

mW/°C

-55 to +150 °C

113 °C/W

70 °C/W

V
A

W

W

NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t<10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal

Impedance graph.

Issue 2 - February 2008

2

CHARACTERISTICS

ZXM64P02X

100

Refer Note (a)

10

DC

100ms

10ms

1ms

100us

1s

1

1

- Drain Current (A)

D

-I

100m

0.1 10 100

-VDS - Drain-Source Voltage (V)

Safe Operating Area

80

Refer Note (b)

60

40

D=0.5

20

D=0.2

Thermal Resistance (°C/W)

D=0.1

Sing le Pulse

0

0.0001 100

0.1

Pulse Width (s)

Transient Thermal Impedance

2.0

1.5

1.0

0.5

0

Max Power Dissipation (Watts)

080160

120

Refer N ote (a)

90

D=0.5

60

30

D=0.2

0

0.0001

D=0.1

Single Pulse

Themal Resistance (°C/W)

1010.010.001 1001010.10.010.001

Transient Thermal Impedance

Refer Note (b)
Refer Note (a)

T - Temperature (°C)

Derating Curve

Pulse Width (s)

140120100604020

1000

Issue 2 - February 2008

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