Diodes ZXM64N02X User Manual
20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control
ORDERING INFORMATION
DEVICE REEL SIZE
ZXM64N02XTA 7 12mm embossed 1000 units
ZXM64N02XTC 13 12mm embossed 4000 units
=20V; R
DS(ON)
(inches)
=0.040Ω; ID=5.4A
TAPE WIDTH (mm) QUANTITY
PER REEL
ZXM64N02X
MSOP8
S
S
S
G
1234
Top View
8
7
65
D
D
D
D
DEVICE MARKING
• ZXM64N02
Issue 2 - February 2008
1
ZXM64N02X
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate- Source Voltage V
Continuous Drain Current (V
(V
=4.5V; TA=25°C)(b)
GS
=4.5V; TA=70°C)(b)
GS
Pulsed Drain Current (c) I
Continuous Source Current (Body Diode)(b) I
Pulsed Source Current (Body Diode)(c) I
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
=25°C (a)
A
=25°C (b)
A
Operating and Storage Temperature Range T
I
D
DM
S
SM
P
P
DSS
GS
D
D
j:Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R
Junction to Ambient (b) R
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t<10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
θJA
θJA
20 V
± 12
5.4
4.3
30 A
2.4 A
30 A
1.1
8.8
mW/°C
1.8
14.4
mW/°C
-55 to +150 °C
113 °C/W
70 °C/W
V
A
W
W
Issue 2 - February 2008
2
TYPICAL CHARACTERISTICS
ZXM64N02X
100
Refer Note (a)
10
DC
1s
100ms
1
- Drain Current (A)
D
I
100m
10ms
1ms
100us
0.1 10 100
1
VDS - Drain-Source Voltage (V)
Safe Operating Area
Ref Note (a)
80
60
40
D=0.5
20
D=0.2
Thermal Resistance (°C/W)
D=0.1
Single Pulse
0
0.0001 100
0.1
Pulse Width (s)
Transient Thermal Impedance
Refer Note (b)
2.0
1.5
1.0
0.5
0
Max Power Dissipation (Watts)
0 80 160
120
90
60
D=0.5
30
D=0.2
0
0.0001
D=0.1
Single Pulse
1010.010.001 1001010.10.010.001
Themal Resistance (°C/W)
Transient Thermal Impedance
Refer Note (b)
Refer Note (a)
T - Temperature (°C)
Derating Curve
Pulse Width (s)
Refer Note (a)
140120100604020
1000
Issue 2 - February 2008
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