Diodes ZXM62P03E6 User Manual
ZXM62P03E6
Document Number: DS33483 Rev. 2 - 2
1 of 7
www.diodes.com
December 2013
© Diodes Incorporated
ZXM62P03E6
Product Summary
V
(BR)DSS
R
DS(on)
ID
TA = +25C
-30V
0.15Ω @ VGS = -10V
-2.6A
0.23Ω @ VGS = -4.5V
-1.5A
Description
This MOSFET utilizes a unique structure that combines the benefits
of low on-resistance with fast switching speed, making it ideal for
high-efficiency power management applications.
Applications
DC - DC converters
Power management functions
Disconnect switches
Motor control
Features and Benefits
Fast switching speed
Low on-resistance
Low threshold
Low gate drive
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT-26
Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish; Solderable per MIL-STD-202,
Method 208
Weight: 0.015 grams (approximate)
Product
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
ZXM62P03E6TA
2P03 7 8
3,000 Units
ZXM62P03E6TC
2P03
13
8
10,000 Units
Equivalent Circuit
2P03 = Product Type Marking Code
D
S
G
6A17
2P03
Pin Out - Top
SOT-26
Top View
30V P-CHANNEL ENHANCEMENT MODE MOSFET
Ordering Information (Note 4)
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
ZXM62P03E6
Document Number: DS33483 Rev. 2 - 2
2 of 7
www.diodes.com
December 2013
© Diodes Incorporated
ZXM62P03E6
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
-30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
VGS = -4.5V
TA = +25°C (Note 5)
TA = +70°C (Note 5)
ID
-1.5
-1.2
A
Pulsed Drain Current (Note 7)
IDM
-7.4
A
Continuous Source Current (Body Diode)
IS
-0.54
A
Pulsed Source Current (Body Diode)
ISM
-7.4
A
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 5)
Linear Derating Factor
PD
625 5 mW
mW/°C
Power Dissipation (Note 6)
Linear Derating Factor
PD
806
6.4
mW
mW/°C
Thermal Resistance, Junction to Ambient (Note 5)
R
θJA
113
°C/W
Thermal Resistance, Junction to Ambient (Note 6)
R
θJA
73
°C/W
Operating and Storage Temperature Range
T
J, TSTG
-55 to +150
°C
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
-30
V
ID = -250μA, VGS = 0V
Zero Gate Voltage Drain Current
I
DSS
-1
μA
VDS = -30V, VGS = 0V
Gate-Source Leakage
I
GSS
±100
nA
VGS = 20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
-1
V
ID = -250μA, VDS = VGS
Static Drain-Source On-Resistance (Note 8)
R
DS (ON)
0.15
Ω
VGS = -10V, ID = -1.6A
0.23
VGS = -4.5V, ID = -0.8A
Forward Transconductance (Notes 8 and 10)
gfs
1.1
S
VDS = -10V, ID = -0.8A
Diode Forward Voltage (Note 8)
VSD
-0.95
V
TJ = +25°C, IS = -1.6A, VGS = 0V
Reverse Recovery Time (Note 10)
trr
19.9 ns
TJ = +25°C, IF = -1.6A,
di/dt = 100A/μs
Reverse Recovery Charge (Note 10)
Qrr
13 nC
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
C
iss
330
pF
VDS = -25V, VGS = 0V
f = 1.0MHz
Output Capacitance
C
oss
120
Reverse Transfer Capacitance
C
rss
45
Turn-On Delay Time (Note 9)
t
d(on)
2.8
ns
VDD = -15V, ID = -1.6A,
RG 6.2Ω RD 25Ω
Turn-On Rise Time (Note 9)
tr
6.4
Turn-Off Delay Time (Note 9)
t
d(off)
13.9
Turn-Off Fall Time (Note 9)
tf
10.3
Total Gate Charge (Note 9)
Qg
10.2
nC
V
DS
= -24V, VGS = -10V,
ID = -1.6A
Gate-Source Charge (Note 9)
Qgs
1.5
Gate-Drain Charge (Note 9)
Qgd
3
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Thermal Characteristics (@T
Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
6. For a device surface mounted on FR4 PCB measured at t ≤5 secs.
7. Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
= +25°C, unless otherwise specified.)
A
Electrical Characteristics (@T
Notes: 8. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.
9. Switching characteristics are independent of operating junction temperature.
10. For design aid only, not subject to production testing.
= +25°C, unless otherwise specified.)
A
ZXM62P03E6
Document Number: DS33483 Rev. 2 - 2
3 of 7
www.diodes.com
December 2013
© Diodes Incorporated
ZXM62P03E6
Typical Characteristics
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