Diodes ZXM62N03G User Manual
30V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXM62N03G
SUMMARY
V
(BR)DSS
= 30V: R
= 0.11 : ID= 4.7A
DS(on)
DESCRIPTION
This new generation of High Density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed.Thismakesthemidealforhighefficiency,lowvoltage,powermanagement
applications.
FEATURES
Low on-resistance
·
Fast switching speed
·
Low threshold
·
·
Low gate drive
·
SOT223 package
APPLICATIONS
·
DC-DC Converters
·
Audio Output Stage
·
Relay and Soleniod driving
3
2
2
T
O
S
·
Motor Control
ORDERING INFORMATION
DEVICE REEL
SIZE
ZXM62N03GTA 7” 12mm 1000 units
ZXM62N03GTC 13” 12mm 4000 units
TAPE
WIDTH
QUANTITY
PER REEL
DEVICE MARKING
·
ZXM6
2N03
ISSUE 1 - OCTOBER 2002
Top View
1
ZXM62N03G
ABSOLUTE MAXIMUM RATING
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current (V
=10V; TA=25°C)(b)
GS
(V
=10V; TA=70°C)(b)
GS
(V
=10V; TA=25°C)(a)
GS
Pulsed Drain Current (c) I
Continuous Source Current (Body Diode) (b) I
Pulsed Source Current (Body Diode)(c) I
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
=25°C (a)
A
=25°C (b)
A
Operating and Storage Temperature Range T
DSS
GS
I
D
DM
S
SM
P
D
P
D
j:Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R
Junction to Ambient (b) R
θJA
θJA
30 V
⫾20 V
4.7
3.8
3.4
16 A
2.6 A
16 A
2.0
16
mW/°C
3.9
31
mW/°C
-55 to +150 °C
62.5 °C/W
32 °C/W
A
W
W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature.
ISSUE 1 - OCTOBER 2002
2
ZXM62N03G
ISSUE 1 - OCTOBER 2002
3
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