Diodes ZXM61P03F User Manual
30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
(BR)DSS
=-30V; R
V
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
SOT23 package
•
APPLICATIONS
•
DC - DC converters
=0.35⍀; ID=-1.1A
DS(ON)
ZXM61P03F
SOT23
•
Power management functions
•
Disconnect switches
•
Motor control
ORDERING INFORMATION
DEVICE REEL SIZE
(inches)
ZXM61P03FTA 7 8 embossed 3,000
ZXM61P03FTC 13 8 embossed 10,000
TAPE WIDTH
(mm)
QUANTITY
PER REEL
DEVICE MARKING
P03
ISSUE 1 - OCTOBER 2005
1
Pin out
Top view
SEMICONDUCTORS
ZXM61P03F
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate- Source Voltage V
DSS
GS
Continuous Drain Current
(V
=-10V; TA=25°C)(b)
GS
(V
=-10V; TA=70°C)(b)
GS
Pulsed Drain Current (c) I
Continuous Source Current (Body Diode)(b) I
Pulsed Source Current (Body Diode)(c) I
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
=25°C (a)
A
=25°C (b)
A
Operating and Storage Temperature Range T
I
P
P
D
DM
S
SM
D
D
j:Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R
Junction to Ambient (b) R
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
θJA
θJA
-30 V
⫾20 V
-1.1
-0.9
-4.3 A
-0.88 A
-4.3 A
625
5
806
6.4
mW
mW/°C
mW
mW/°C
-55 to +150 °C
200 °C/W
155 °C/W
A
ISSUE 1 - OCTOBER 2005
2
SEMICONDUCTORS
CHARACTERISTICS
ZXM61P03F
ISSUE 1 - OCTOBER 2005
3
SEMICONDUCTORS
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