Diodes ZXM61P02F User Manual

G

Product Summary

I

V

R

(BR)DSS

-20V

DS(on)

600mΩ @ V

900mΩ @ VGS = -2.7V

= -4.5V

GS

= +25C

T

A

-0.92A

-0.75A

D

Description and Applications

This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed, making it ideal for high-efficiency power management applications.

 DC - DC converters  Power management functions  Disconnect switches  Motor control

SOT23

D

Top View

ZXM61P02F

20V P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

 Fast switching speed  Low on-resistance  Low threshold  Low gate drive

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT23  Case Material: Molded Plastic, UL Flammability Classification

Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Matte Tin Finish; Solderable per MIL-STD-202,

Method 208

 Weight: 0.008 grams (approximate)

S

D

G

S

Top View

Pin Out

Equivalent Circuit

Ordering Information (Note 4)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXM61P02FTA

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

P02 7 8 3000 Units

Marking Information

ZXM61P02F

Document Number DS33478 Rev. 3 - 2

P02

www.diodes.com

P02 = Product Type Marking Code

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Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current

V

= 4.5V

GS

T

T Pulsed Drain Current (Note 7) Continuous Source Current (Body Diode) (Note 6) Pulsed Source Current (Body Diode) (Note 7)

= +25°C (Note 6)

A

= +70°C (Note 6)

A

V

DSS

V

GS

I

D

I

DM

I

S

I

SM

-20 V

±12 V

-0.9

-0.7

-4.9 A

-0.9 A

-4.9 A

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Power Dissipation (Note 5) Linear Derating Factor Power Dissipation (Note 6) Linear Derating Factor

Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range

Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions

6. For a device surface mounted on FR4 PCB measured at t ≤ 5 secs.

7. Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10μs - pulse current limited by maximum junction temperature.

R R

T

J, TSTG

P

D

P

D

θJA

625

5

806

6.4 200 °C/W 155 °C/W

-55 to +150 °C

ZXM61P02F

A

mW

mW/°C

mW

mW/°C

Thermal Characteristics

ZXM61P02F

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)

r

)

r

)

g

ZXM61P02F

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

-20

     

V

ID = -250μA, VGS = 0V

-0.1 μA

±100 nA

VDS = -20V, VGS = 0V VGS = 12V, VDS = 0V

ON CHARACTERISTICS

Gate Threshold Voltage

Static Drain-Source On-Resistance (Note 8)

Forward Transconductance (Notes 8 and 10) Diode Forward Voltage (Note 8) Reverse Recovery Time (Note 10) Reverse Recovery Charge (Note 10)

V

GS(th

R

DS (ON)

g

V

Q

fs

SD

t

r

-0.7

 

0.56

 



 

14.9

5.6

-1.5 V

0.6

0.9

-0.95 V

 

ID = -250A, VDS = VGS V

Ω

V

S

VDS = -10V, ID = -0.31A TJ = +25°C, IS = -0.61A, VGS = 0V

ns

T di/dt = 100A/μs

nC

= -4.5V, ID = -0.61A

GS

= -2.7V, ID = -0.31A

GS

= +25°C, IF = -0.61A,

J

DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time (Note 9) Turn-On Rise Time (Note 9) Turn-Off Delay Time (Note 9) Turn-Off Fall Time (Note 9) Total Gate Charge (Note 9) Gate-Source Charge (Note 9) Gate-Drain Charge (Note 9)

Notes: 8. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.

9. Switching characteristics are independent of operating junction temperature.

10. For design aid only, not subject to production testing.

C C C

t

d(on

t

d(off

Q

iss

oss

rss

t

f

Q

s

d

         

150

70 30

2.9

6.7

11.2

10.1

3.5

0.5

1.5

         

pF

ns

nC

= -15V, VGS = 0V

V

DS

f = 1.0MHz

= -110V, ID = -0.93A,

V

DD

R

 6.2Ω RD  11Ω

G

= -16V, VGS = -4.5V,

V

DS

I

= -0.61A

D

ZXM61P02F

Document Number DS33478 Rev. 3 - 2

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Typical Characteristics

ZXM61P02F

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C

Typical Characteristics - continued

ZXM61P02F

Test Circuits

V

G

Q

G

Q

GS

Q

GD

Ch a r g e

Basicgatechargewaveform

t

trt

t

(on)

d(of )

t

d(on)

r

t

(on)

V

90%

10%

V

urrent

regulator

50k

0.2mF

12V

I

Gate charge test circuit

DS

V

GS

R

G

GS

Pulse width , 1mS Dut y factor 0.1%

Sam e a s

D.U. T

V

G

D.U.T

V

GS

R

D

DS

I

D

V

DS

V

DD

Sw itching t ime w aveforms

Sw itching time test circuit

ZXM61P02F

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

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

H

K

1

A

C

B

D

All 7

°

J

M

L

a

L

1

ZXM61P02F

Dim Min Max Typ

A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975

K1 0.903 1.10 1.025

L 0.45 0.61 0.55

L1 0.25 0.55 0.40

M 0.085 0.150 0.110 a

SOT23

8°

All Dimensions in mm

Suggested Pad Layout



Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Y

Dimensions Value (in mm)

Z

X

E

C

Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35

ZXM61P02F

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

ZXM61P02F

Document Number DS33478 Rev. 3 - 2

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