Diodes ZXM61P02F User Manual

G

Product Summary

I

V

R

(BR)DSS

-20V

DS(on)

600mΩ @ V

900mΩ @ VGS = -2.7V

= -4.5V

GS

= +25C

T

A

-0.92A

-0.75A

D

Description and Applications

This MOSFET utilizes a unique structure that combines the benefits
of low on-resistance with fast switching speed, making it ideal for
high-efficiency power management applications.

 DC - DC converters
 Power management functions
 Disconnect switches
 Motor control

SOT23

D

Top View

ZXM61P02F

20V P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

 Fast switching speed
 Low on-resistance
 Low threshold
 Low gate drive

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT23
 Case Material: Molded Plastic, UL Flammability Classification

Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminals: Matte Tin Finish; Solderable per MIL-STD-202,

Method 208

 Weight: 0.008 grams (approximate)

S

D

G

S

Top View

Pin Out

Equivalent Circuit

Ordering Information (Note 4)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXM61P02FTA

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

P02 7 8 3000 Units

Marking Information

ZXM61P02F

Document Number DS33478 Rev. 3 - 2

P02

www.diodes.com

P02 = Product Type Marking Code

1 of 7

October 2013

© Diodes Incorporated

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current

V

= 4.5V

GS

T

T
Pulsed Drain Current (Note 7)
Continuous Source Current (Body Diode) (Note 6)
Pulsed Source Current (Body Diode) (Note 7)

= +25°C (Note 6)

A

= +70°C (Note 6)

A

V

DSS

V

GS

I

D

I

DM

I

S

I

SM

-20 V

±12 V

-0.9

-0.7

-4.9 A

-0.9 A

-4.9 A

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Power Dissipation (Note 5)
Linear Derating Factor
Power Dissipation (Note 6)
Linear Derating Factor

Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range

Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions

6. For a device surface mounted on FR4 PCB measured at t ≤ 5 secs.

7. Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10μs - pulse current limited by maximum junction temperature.

R
R

T

J, TSTG

P

D

P

D

θJA

θJA

625

5

806

6.4
200 °C/W
155 °C/W

-55 to +150 °C

ZXM61P02F

A

mW

mW/°C

mW

mW/°C

Thermal Characteristics

ZXM61P02F

Document Number DS33478 Rev. 3 - 2

2 of 7

www.diodes.com

October 2013

© Diodes Incorporated

)

r

r

)

r

)

g

g

g

ZXM61P02F

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

-20

 
 
 

V

ID = -250μA, VGS = 0V

-0.1 μA

±100 nA

VDS = -20V, VGS = 0V
VGS = 12V, VDS = 0V

ON CHARACTERISTICS

Gate Threshold Voltage

Static Drain-Source On-Resistance (Note 8)

Forward Transconductance (Notes 8 and 10)
Diode Forward Voltage (Note 8)
Reverse Recovery Time (Note 10)
Reverse Recovery Charge (Note 10)

V

GS(th

R

DS (ON)

g

V

Q

fs

SD

t

r

r

-0.7

 

0.56

 







 

14.9

5.6

-1.5 V

0.6

0.9

-0.95 V




ID = -250A, VDS = VGS
V

Ω

V

S

VDS = -10V, ID = -0.31A
TJ = +25°C, IS = -0.61A, VGS = 0V

ns

T
di/dt = 100A/μs

nC

= -4.5V, ID = -0.61A

GS

= -2.7V, ID = -0.31A

GS

= +25°C, IF = -0.61A,

J

DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time (Note 9)
Turn-On Rise Time (Note 9)
Turn-Off Delay Time (Note 9)
Turn-Off Fall Time (Note 9)
Total Gate Charge (Note 9)
Gate-Source Charge (Note 9)
Gate-Drain Charge (Note 9)

Notes: 8. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.

9. Switching characteristics are independent of operating junction temperature.

10. For design aid only, not subject to production testing.

C
C
C

t

d(on

t

d(off

Q

Q

iss

oss

rss

t

t

f

Q

s

d












150

70
30

2.9

6.7

11.2

10.1

3.5

0.5

1.5












pF

ns

nC

= -15V, VGS = 0V

V

DS

f = 1.0MHz

= -110V, ID = -0.93A,

V

DD

R

 6.2Ω RD  11Ω

G

= -16V, VGS = -4.5V,

V

DS

I

= -0.61A

D

ZXM61P02F

Document Number DS33478 Rev. 3 - 2

3 of 7

www.diodes.com

October 2013

© Diodes Incorporated