Diodes ZXM61P02F User Manual

Page 1
G
Product Summary
V
R
(BR)DSS
-20V
DS(on)
600m @ V
900m @ VGS = -2.7V
= -4.5V
GS
= +25C
T
A
-0.92A
-0.75A
D
Description and Applications
This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed, making it ideal for high-efficiency power management applications.
DC - DC converters Power management functions Disconnect switches Motor control
SOT23
D
Top View
ZXM61P02F
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Fast switching speed Low on-resistance Low threshold Low gate drive
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23 Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Matte Tin Finish; Solderable per MIL-STD-202,
Method 208
Weight: 0.008 grams (approximate)
S
D
G
S
Top View
Pin Out
Equivalent Circuit
Ordering Information (Note 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXM61P02FTA
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
P02 7 8 3000 Units
Marking Information
ZXM61P02F
Document Number DS33478 Rev. 3 - 2
P02
www.diodes.com
P02 = Product Type Marking Code
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Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
V
= 4.5V
GS
T
T Pulsed Drain Current (Note 7) Continuous Source Current (Body Diode) (Note 6) Pulsed Source Current (Body Diode) (Note 7)
= +25°C (Note 6)
A
= +70°C (Note 6)
A
V
DSS
V
GS
D
DM
S
SM
-20 V
±12 V
-0.9
-0.7
-4.9 A
-0.9 A
-4.9 A
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Power Dissipation (Note 5) Linear Derating Factor Power Dissipation (Note 6) Linear Derating Factor
Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range
Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
6. For a device surface mounted on FR4 PCB measured at t 5 secs.
7. Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10μs - pulse current limited by maximum junction temperature.
R R
T
J, TSTG
P
D
P
D
θJA
θJA
625
5
806
6.4 200 °C/W 155 °C/W
-55 to +150 °C
ZXM61P02F
A
mW
mW/°C
mW
mW/°C
Thermal Characteristics
ZXM61P02F
Document Number DS33478 Rev. 3 - 2
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Page 3
)
r
r
)
r
)
g
g
g
ZXM61P02F
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage
BV
DSS
GSS
DSS
-20
V
ID = -250μA, VGS = 0V
-0.1 μA
±100 nA
VDS = -20V, VGS = 0V VGS = 12V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 8)
Forward Transconductance (Notes 8 and 10) Diode Forward Voltage (Note 8) Reverse Recovery Time (Note 10) Reverse Recovery Charge (Note 10)
V
GS(th
R
DS (ON)
g
V
Q
fs
SD
r
r
-0.7
0.56
14.9
5.6
-1.5 V
0.6
0.9
-0.95 V
 
ID = -250A, VDS = VGS V
V
S
VDS = -10V, ID = -0.31A TJ = +25°C, IS = -0.61A, VGS = 0V
ns
T di/dt = 100A/μs
nC
= -4.5V, ID = -0.61A
GS
= -2.7V, ID = -0.31A
GS
= +25°C, IF = -0.61A,
J
DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time (Note 9) Turn-On Rise Time (Note 9) Turn-Off Delay Time (Note 9) Turn-Off Fall Time (Note 9) Total Gate Charge (Note 9) Gate-Source Charge (Note 9) Gate-Drain Charge (Note 9)
Notes: 8. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%.
9. Switching characteristics are independent of operating junction temperature.
10. For design aid only, not subject to production testing.
C C C
d(on
d(off
Q
Q
iss
oss
rss
f
Q
s
d
         
150
70 30
2.9
6.7
11.2
10.1
3.5
0.5
1.5
         
pF
ns
nC
= -15V, VGS = 0V
V
DS
f = 1.0MHz
= -110V, ID = -0.93A,
V
DD
R
6.2 RD 11
G
= -16V, VGS = -4.5V,
V
DS
= -0.61A
D
ZXM61P02F
Document Number DS33478 Rev. 3 - 2
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Page 4
Typical Characteristics
ZXM61P02F
ZXM61P02F
Document Number DS33478 Rev. 3 - 2
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C
Typical Characteristics - continued
ZXM61P02F
Test Circuits
V
G
Q
G
Q
GS
Q
GD
Ch a r g e
Basicgatechargewaveform
t
trt
t
(on)
d(of )
t
d(on)
r
t
(on)
V
90%
10%
V
urrent
regulator
50k
0.2mF
12V
I
Gate charge test circuit
DS
V
GS
R
G
GS
Pulse width , 1mS Dut y factor 0.1%
Sam e a s
D.U. T
V
G
D.U.T
V
GS
R
D
DS
I
D
V
DS
V
DD
Sw itching t ime w aveforms
Sw itching time test circuit
ZXM61P02F
Document Number DS33478 Rev. 3 - 2
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Page 6
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
H
K
K
1
A
C
B
D
All 7
°
J
M
L
a
L
1
ZXM61P02F
Dim Min Max Typ
A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975
K1 0.903 1.10 1.025
L 0.45 0.61 0.55
L1 0.25 0.55 0.40
M 0.085 0.150 0.110 a
SOT23
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Dimensions Value (in mm)
Z
X
E
C
Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35
ZXM61P02F
Document Number DS33478 Rev. 3 - 2
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com
ZXM61P02F
ZXM61P02F
Document Number DS33478 Rev. 3 - 2
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