Diodes ZXM61N02F User Manual
20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT23 package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control
ORDERING INFORMATION
DEVICE REEL SIZE
ZXM61N02FTA 7 8mm embossed 3000 units
ZXM61N02FTC 13 8mm embossed 10000 units
=20V; R
DS(ON)
(inches)
=0.18V; ID=1.7A
TAPE WIDTH (mm) QUANTITY
PER REEL
ZXM61N02F
SOT23
Top View
DEVICE MARKING
• N02
ISSUE 1 - JUNE 2004
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ZXM61N02F
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate Source Voltage V
Continuous Drain Current (V
(V
=4.5V; TA=25°C)(b)
GS
=4.5V; TA=70°C)(b)
GS
Pulsed Drain Current (c) I
Continuous Source Current (Body Diode) (b) I
Pulsed Source Current (Body Diode) I
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
=25°C (a)
A
=25°C (b)
A
Operating and Storage Temperature Range T
I
D
DM
S
SM
P
P
DSS
GS
D
D
j:Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R
Junction to Ambient (b) R
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t<5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
θJA
θJA
20 V
± 12
1.7
1.3
7.4 A
0.8 A
7.4 A
625
5
806
6.4
mW
mW/°C
mW
mW/°C
-55 to +150 °C
200 °C/W
155 °C/W
V
A
ISSUE 1 - JUNE 2004
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CHARACTERISTICS
ZXM61N02F
- Drain Current (A)
D
I
10
1
100m
10m
Refer Note (a)
DC
1s
100ms
10ms
1ms
100us
0.1 100
101
VDS - Drain-Source Voltage (V)
Safe Operating Area
180
160
140
120
100
80
60
40
20
Thermal Resistance (°C/W)
0
0.0001 0.1 10
Refer Note (b)
D=0.5
D=0.2
D=0.1
D=0.05
0.001 0.01 1
Single Pulse
Pulse Width (s)
Transient Thermal Impedance
1.0
0.8
0.6
0.4
0.2
0
Max Power Dissipation (Watts)
080160
20 40 60 100 120 140
Refer Note (b)
Refer Note (a)
T - Temperature (°C)
Derating Curve
240
200
160
120
80
40
Thermal Resistance (°C/W)
0
0.0001
Refer Note (a)
D=0.5
D=0.2
D=0.1
D=0.05
0.001 0.01 0.1 1 100
Single Pu lse
10 1000
Pulse Width (s)
Transient Thermal Impedance
ISSUE 1 - JUNE 2004
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