Diodes ZXGD3105N8 User Manual
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ZXGD3105N8
SYNCHRONOUS MOSFET CONTROLLER IN SO-8
Description
ZXGD3105N8 synchronous controller is designed for driving a
MOSFET as an ideal rectifier. This is to replace a diode for increasing
the power transfer efficiency.
Proportional Gate drive control monitors the reverse voltage of the
MOSFET such that if body diode conduction occurs a positive voltage
is applied to the MOSFET’s Gate pin. Once the positive voltage is
applied to the Gate the MOSFET switches on allowing reverse current
flow. The controllers’ output voltage is then proportional to the
MOSFET Drain-Source voltage and this is applied to the Gate via the
driver. This action minimizes body diode conduction whilst enabling a
rapid MOSFET turn-off as Drain current decays to zero.
Applications
Flyback Converters in:
Low Voltage AC / DC Adaptors
Set Top Box
PoE Power Devices
Resonant Converters in:
Telecoms PSU
Laptop Adaptors
Computing Power Supplies - ATX and Server PSU
Features
Proportional Gate Drive to Minimize Body Diode Conduction
Low Standby Power with Quiescent Supply Current < 1mA
4.5V Operation Enables Low Voltage Supply
25V V
100V Drain Voltage Rating
Operation up to 500kHz
Critical Conduction Mode (CrCM) & Continuous Mode (CCM)
Compliant with Eco-Design Directive
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Rating
CC
Mechanical Data
Case: SO-8
Case material: Molded Plastic. “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
SO-8
Vcc
DNC
BIAS
DRAIN
Top View
Pin-Out
GATE
GND
DNC
REF
Ordering Information (Note 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXGD3105N8TC ZXGD3105 13 12 2500
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
4. For packaging details, go to our website at http://www.diodes.com
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free.
<1000ppm antimony compounds.
Marking Information
ZXGD
3105
Y W
ZXGD3105N8
Document Number DS35101 Rev. 3 - 2
ZXGD = Product Type Marking Code, Line 1
3105 = Product Type Marking Code, Line 2
YY = Year (ex: 11 = 2011)
WW = Week (01 - 53)
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Functional Block Diagram
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ZXGD3105N8
Pin
Number
1
2 DNC
3 BIAS
4 DRAIN
5 REF
6 DNC
7 GND
8 GATE
ZXGD3105N8
Document Number DS35101 Rev. 3 - 2
Pin
Name
V
CC
Description
Power supply
This supply pin should be closely decoupled to ground with a ceramic capacitor.
Do not connect
Leave pin floating.
Bias
Connect this pin to V
Refer to Table 1 and 2, in Application Information section.
Drain sense
Connect directly to the synchronous MOSFET drain terminal.
Reference
Connect this pin to V
Refer to Table 1 and 2, in Application Information section.
Do not connect
Leave pin floating.
Ground
Connect this pin to the synchronous MOSFET source terminal and ground reference point.
Gate drive
This pin sinks and sources the I
gate.
via R
CC
via R
CC
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resistor. Select R
BIAS
resistor. Select R
REF
SINK
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and I
to source 0.54mA into this pin.
BIAS
to source 1.02mA into this pin.
REF
current to the synchronous MOSFET
SOURCE
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ZXGD3105N8
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Supply voltage, relative to GND
Drain pin voltage
Gate output voltage
Gate Driver peak source current
Gate Driver peak sink current
Reference voltage
Reference current
Bias voltage
Bias current
V
CC
V
D
V
-3 to V
G
I
SOURCE
I
SINK
V
V
REF
I
REF
V
V
BIAS
I
BIAS
25 V
-3 to +100 V
CC
4 A
9 A
CC
25 mA
CC
100 mA
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
490
3.92
655
5.24
720
5.76
785
6.28
255
Power Dissipation
Linear derating factor
Thermal Resistance, Junction to Ambient
(Note 5)
(Note 6)
P
D
(Note 7)
(Note 8)
(Note 5)
(Note 6) 191
(Note 7) 173
R
θJA
(Note 8) 159
Thermal Resistance, Junction to Lead (Note 9) R
Thermal Resistance, Junction to Case (Note 10) R
55 °C/W
θJL
45 °C/W
θJC
Operating Temperature Range TJ -40 to +150
Storage Temperature Range T
-50 to +150
STG
ESD Ratings (Note 11)
+3
V
V
V
mW
mW/°C
°C/W
°C
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 200 V B
Notes: 5. For a device surface mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the
device is measured when operating in a steady-state condition.
6. Same as note (5), except pin 1 (V
7. Same as note (6), except both heatsinks are 10mm x 10mm.
8. Same as note (6), except both heatsinks are 15mm x 15mm.
9. Thermal resistance from junction to solder-point at the end of each lead on pin 1 (V
10. Thermal resistance from junction to top of the case.
11. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXGD3105N8
Document Number DS35101 Rev. 3 - 2
) and pin 7 (GND) are both connected to separate 5mm x 5mm 1oz copper heatsinks.
CC
) or pin 7 (GND).
CC
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Thermal Derating Curve
0.8
0.7
0.6
0.5
15mm x 15mm
10mm x 10mm
5mm x 5mm
0.4
Minimum
0.3
Layout
0.2
0.1
0.0
Max Power Dissipation (W)
0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Derating Curve
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ZXGD3105N8
Electrical Characteristics (@T
VCC = 10V; R
Input Supply
Quiescent current
Gate Driver
Gate peak source current
Gate peak sink current
Detector under DC condition
Turn-off Threshold Voltage
Gate output voltage
Switching Performance
Turn-on propagation delay
Gate rise time
Turn-off propagation delay
Gate fall time
BIAS
= 18kΩ (I
= 0.54mA); R
BIAS
Characteristic Symbol Min Typ Max Unit Test Condition
= +25°C, unless otherwise specified.)
A
= 9.1kΩ (I
REF
I
I
SOURCE
I
SINK
V
V
G(off)
VG
t
d(rise)
t
t
d(fall)
t
Q
T
r
f
= 1.02mA)
REF
— 1.56 — mA
— 1.2 —
— 5 —
-20 -10 0 mV
— 0.2 0.6
5.0 7.8 —
8.0 9.4 —
— 118 —
— 77 —
— 14 —
— 26 —
V
≥ 0mV
DRAIN
A
Capacitive load: C
V
= 1V
G
V
≥ 1V
DRAIN
V
V
= -50mV
DRAIN
V
= -100mV
DRAIN
Capacitive load: C
ns
Rise and fall measured 10% to 90%
L
L
= 10nF
Capacitive load only
= 10nF
ZXGD3105N8
Document Number DS35101 Rev. 3 - 2
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Typical Electrical Characteristics (@T
14
12
10
8
6
VCC = 5V
4
Gate Voltage (V)
G
V
2
Capacitive load only
0
-100 -80 -60 -40 -20 0
VD Drain Voltage (mV)
Transfer Characteristic
= +25°C, unless otherwise specified.)
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VCC = 15V
VCC = 12V
VCC = 10V
12
10
8
6
VCC = 5V
4
Gate Voltage (V)
G
V
Capacitive load and
2
50k pull down resistor
0
-100 -80 -60 -40 -20 0
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ZXGD3105N8
VCC = 15V
VCC = 12V
VCC = 10V
VD Drain Voltage (mV)
Transfer Characteristic
10
Ta = -40°C
8
Ta = 25°C
Ta = 125°C
6
4
VCC = 10V
R
=18k
Gate Voltage (V)
G
V
BIAS
2
R
REF
50k pull down
=9.1k
0
-100 -80 -60 -40 -20 0
VD Drain Voltage (mV)
Transfer Characteristic
230
220
210
200
190
180
170
160
150
140
130
45
40
Switching Time (ns)
35
30
-50 -25 0 25 50 75 100 125 150
Ton = td1 + t
T
off
= td2 + t
r
f
Temperature (°C)
VCC = 10V
R
R
CL=10nF
BIAS
REF
=18k
=9.1k
0
VCC = 10V
-5
-10
-15
R
=18k
BIAS
R
=9.1k
REF
VG = 1V
50k pull down
-20
Drain Voltage (mV)
-25
D
V
-30
-50 0 50 100 150
Temperature (°C)
Drain Sense Voltage vs Temperature
180
R
160
140
120
100
=18k
BIAS
R
=9.1k
REF
f=500kHz
VCC = 12V
VCC = 10V
80
60
40
Supply Current (mA)
20
0
0 2 4 6 8 10 12 14 16 18 20 22
Capacitance (nF)
VCC = 15V
VCC = 5V
Switching vs Temperature
ZXGD3105N8
Document Number DS35101 Rev. 3 - 2
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Supply Current vs Capacitive Load
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