Diodes ZXGD3005E6 User Manual

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Description and Applications

The ZXGD3005E6 is a high-speed non-inverting single gate driver
capable of driving up to 10A into a MOSFET or IGBT gate capacitive
load from supply voltages up to 25V. With propagation delay times
down to <10ns and correspondingly rise/fall times of <20ns.

This gate driver ensures rapid switching of the MOSFET or IGBT to
minimize power losses and distortion in high current switching
applications. It is ideally suited to act as a voltage buffer between the
typically high output impedances of a controller IC and the effectively
low impedance on the gate of a power MOSFET or IGBT during
switching. Its low input voltage requirement and high current gain
allows high current driving from low voltage controller ICs.

The ZXGD3005E6 has separate source and sink outputs that enables
the turn-on and turn-off times of the MOSFET or IGBT to be
independently controlled. In addition, the wide supply voltage range
allows full enhancement of the MOSFET or IGBT to minimize on-state
losses and permits +15V to -5V gate drive voltage to prevent dV/dt

ADVANCE INFORMATION

induced false triggering of IGBTs. The ZXGD3005E6 has been
designed to be inherently rugged to latch-up and shoot-through
issues. The optimized pin-out SOT26 package eases board layout,
enabling reduced parasitic inductance of traces.

Power MOSFET and IGBT Gate Driving in:

• Synchronous switch-mode power supplies

• Power Factor Correction (PFC) in power supplies

• Secondary side synchronous rectification

• Plasma Display Panel power modules

• 1, 2 and 3-phase motor control circuits

• Audio switching amplifier power output stages

• Solar inverters

SOT26

1

Top View

V

CC

IN

V

EE

Top View

Pin-Out

Features and Benefits

• Emitter-follower configuration for ultra-fast switching

• <10ns propagation delay time

• <20ns rise/fall time

• Non-inverting voltage buffer stage

• Wide supply voltage up to 25V to minimize on-losses

• 10A peak current drive into capacitive loads

• Low input current of 1mA to deliver 4A output current

• Separate source and sink outputs for independent control of rise

and fall time

• Optimized pin-out to ease board layout and minimize parasitic
inductance of traces

• Rugged design that avoids latch-up or shoot-through issues

• Near - Zero quiescent supply current

• “Lead-Free”, RoHS Compliant (Note 1)

• “Green” Devices (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT26

• Case material: Molded Plastic. “Green” Molding Compound.

• UL Flammability Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish

• Weight: 0.018 grams (approximate)

Source

Do Not Connect

Sink

Diodes Incorporated

ZXGD3005E6

25V 10A GATE DRIVER IN SOT26

Pin Name Pin Function

VCC

IN Driver input pin

VEE

SOURCE Source current output

SINK Sink current output

Supply voltage high

Supply voltage low

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXGD3005E6TA 3005 7 8 3000

Notes: 1. No purposefully added lead

2. “Green” devices, Halogen and Antimony Free, Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com

3. For packaging details, go to our website at http://www.diodes.com

Marking Information

3005

ZXGD3005E6

Document Number DS35095 Rev. 4 – 2

www.diodes.com

3005 = Product Type Marking Code

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Typical Application Circuit

ADVANCE INFORMATION

Controller IC

IN

VCC

VCC

ZXGD3005

V

EE

SOURCE

SINK

R

SOURCE

R

SINK

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V

ZXGD3005E6

S

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Supply voltage, with respect to VEE
Input voltage, with respect to VEE
Output difference voltage (Source – Sink)
Peak output current
Input current

ΔV

V

CC

V

IN

source-sink

I

PK

I

IN

25 V
25 V

±7.5 V

±10 A

±100 mA

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Power Dissipation (Notes 4 & 5)
Linear derating factor

Thermal Resistance, Junction to Ambient (Notes 4 & 5)
Thermal Resistance, Junction to Lead (Note 6)
Operating and Storage Temperature Range

Notes: 4. For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is

measured when operating in a steady-state condition. The heatsink is split in half with the pin 1 (V

5. For device with two active die running at equal power.

6. Thermal resistance from junction to solder-point at the end of each lead on pin 1 (V

P

R
R

T

J, TSTG

JA
JL

D

CC

CC

) and pin 3 (VEE).

1.1

8.8
113
105

-55 to +150

) and pin 3 (VEE) connected separately to each half.

W

mW/°C

°C/W

°C

ZXGD3005E6

Document Number DS35095 Rev. 4 – 2

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ZXGD3005E6

Electrical Characteristics @T

Characteristic Symbol Min Typ Max Unit Test Condition

Output voltage, high
Output voltage, low

Supply breakdown voltage

Quiescent supply current
Source current

Sink current

Source current
with varying input resistances

Sink current
with varying input resistances

ADVANCE INFORMATION

Switching times
with low load capacitance C

= 10nF

L

Switching times
with high load capacitance C

= 100nF

L

Switching times
with asymmetric source and sink resistors

Switching Test Circuit and Timing Diagram

= 25°C unless otherwise specified

A

V

OH

V

OL

BV

I

Q

I

source

I

sink

I

(source)

I

(sink)

t

d(rise)

t

t

d(fall)

tf

t

d(rise)

t

t

d(fall)

tf

CC

r

r

-

­25 - ­25 - -

- - 50

- - 50

- 4.0 -

- 3.8 -

-

-

-

-

VCC- 0.8
VEE+ 0.2 VEE+ 0.5 V

6.4

5.5

3.9

2.2

0.44

7.7

6.5

4.4

2.3

0.46

8
48
16
35

46

419

47

467

t

d(rise)

t

t

d(fall)

tf

r

24

133

16
37

-

- A

- A

- ns

- ns

ns

V

IN

V

IN

I

Q

V

I

Q

V

CC

nA

V

CC

VCC= 5V, IIN= 1mA, V

A

VCC= 5V, IIN=-1mA, V
R

IN

R

IN

R

IN

R

IN

R

IN

R

IN

R

IN

R

IN

R

IN

R

IN

V

CC

V

IN

R

IN

C

L

R

SOURCE

V

CC

V

IN

R

IN

C

L

R

SOURCE

V

CC

V

IN

R

IN

C

L

R

SOURCE

= VCC

= VEE
= 100μA, V
= 100μA, V

= 20V,V
= 20V,V

= 200

= 1k

= 10k

= 100k

= 1000k

= 200

= 1k

= 10k

= 100k

= 1000k

= 15V, V

= VCC

IN

= VEE = 0V

IN

= VCC

IN

= VEE = 0V

IN

OUT
OUT

V

= 15V, V

CC

V

= 15V

IN

C

= 100nF, RL = 0.18

L

R

SOURCE

= 15V, V

V

CC

= 15V

V

IN

C

= 100nF, RL = 0.18

L

R

SOURCE

= 0V

EE

= 0 to 15V

= 1k

= 10nF, RL = 0.18

= 0, R

= 15V, V

EE

SINK

= 0V

= 0

= 0 to 15V

= 1k

= 100nF, RL = 0.18

= 0, R

= 15V, V

EE

SINK

= -5V

= 0

= -5 to 15V

= 1k

= 10nF, RL = 0.18

=4.7, R

SINK

=0

= 0V
= 5V

EE

= 0, R

EE

= 0, R

= 0V

SINK

= 0V

SINK

= 0

= 0

R

SOURCE

R

SINK

90%

CL

L

V

IN

10%

t

t

d(rise)

90%

V

OUT

d(fall)

90%

V

OUT

R

V

50

VIN

50

RIN

IN

CC

VCC

ZXGD3005

V

EE

SOURCE

SINK

10%

10%

ZXGD3005E6

Document Number DS35095 Rev. 4 – 2

www.diodes.com

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