Diodes ZXGD3001E6 User Manual
ZXGD3001E6
9A(peak) Gate driver in SOT23-6
General description
The ZXGD3001E6 is a high-speed non-inverting single MOSFET gate driver capable of driving up to 9A
into a MOSFET or IGBT gate capacitive load from supply voltages up to 12V. With typical propagation
delay times down to 3ns and rise/fall times down to 11ns this device ensures rapid switching of the
power MOSFET or IGBT to minimize power losses and distortion in high current fast switching
applications.
The ZXGD3001E6 is inherently rugged to latch-up and shoot-through, and its wide supply voltage
range allows full enhancement to minimize on-losses of the power MOSFET or IGBT.
Its low input voltage requirement and high current gain allows high current driving from low voltage
controller ICs, and the optimized pin-out SOT23-6 package with separate source and sink pins eases
board layout, enabling reduced parasitic inductance and independent control of rise and fall slew rates.
Features
• 12V operating voltage range
• 9 Amps peak output current
• Fast switching emitter-follower configuration
• 3ns propagation delay time
• 11ns rise/fall time, 1000pF load
• Low input current requirement
• 4.2A(source)/2.2A(sink) output current from 10mA input
• SOT23-6 package
• Separate source and sink outputs for independent control of rise and fall time
• Optimized pin-out to ease board layout and minimize trace inductance
• No Latch Up
• No shoot through
• Near - Zero quiescent and output leakage current
Typical application circuit
VCC
VCC
SOURCE
SINK
Input
Input
IN
1
IN
2
ZXGD3001
GND
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© Zetex Semiconductors plc 2007
V
S
Applications
Power MOSFET and IGBT Gate Driving in
• Synchronous switch-mode power supplies
• Secondary side synchronous rectification
• Plasma Display Panel power modules
• 1, 2 and 3-phase motor control circuits
• Audio switching amplifier power output stages
Pin configuration
ZXGD3001E6
Pin
Pin Function
Name
V
CC
/ IN2Driver input pins. These are normally
IN
1
Driver supply
connected together by circuit tracks.
GND Ground
SOURCE Source current output.
SINK Sink current output.
Ordering information
DEVICE Reel size
(inches)
ZXGD3001E6TA 7 8 embossed 3000
Tape width
(mm)
Quantity
per reel
Device marking
3001
V
IN
GND
CC
1
SOURCE
IN
2
SINK
SOT236
Top view
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© Zetex Semiconductors plc 2007
ZXGD3001E6
Absolute maximum ratings
Parameter Symbol Limit Unit
Supply voltage V
Input voltage V
(c)
(c)
IN1
IN1
+ I
+ I
IN2
=10mA
IN2
=25°C
A
=10mA
(a)
(a)(b)
(a)
Peak sink current
Source current @ I
Sink current @ I
Input current
Power dissipation at T
CC
IN
I
(sink)PK
I
(source)
I
(sink)
I
, I
IN1
P
IN2
D
Linear derating factor
Operating and storage temperature range T
, T
j
stg
Thermal resistance
Parameter Symbol Value Unit
Junction to ambient
(a)(b)
R
JA
12 V
12 V
9A
4.2 A
2.2 A
1A
1.1
8.8
-55 to +150
W
mW/°C
°C
113 °C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) For device with two active dice running at equal power.
(c) Pulse width <=300s limit repetition rate to comply with maximum junction temperature.
Issue 1 - October 2007 3 www.zetex.com
© Zetex Semiconductors plc 2007
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