Diodes ZXBM1004 User Manual

SEMICONDUCTORS

ZXBM1004

VARIABLE SPEED SINGLE-PHASE BLDC MOTOR CONTROLLER

DESCRIPTION

The ZXBM1004 is a single-phase, DC brushless motor pre-driver with PWM
variable speed control suitable for fan and blower motors. The controller is
intended for applications where the fan or blower speed is controlled by an
external PWM signal, thermistor or DC voltage.

FEATURES

Compliant with external PWM speed control

•

Compliant with thermistor control

•

Minimum speed setting

•

Low noise

•

Auto restart

•

Built in hall amplifier

•

Speed pulse (FG) and lock rotor (RD) outputs

•

Up to 18V input voltage (60V with external regulator)

•

QSOP16 package

•

Q

O

1

6

P

S

Associated application notes:-

AN41 - Thermistor control

AN42 - External PWM control

AN43 - Interfacing to the motor windings

APPLICATIONS

•

Mainframe and personal computer fans and blowers

•

Instrumentation fans

•

Central heating blowers

•

Automotive climate control

ORDERING INFORMATION - QSOP16

DEVICE

ZXBM1004Q16TA
ZXBM1004Q16TC

REEL SIZE TAPE WIDTH QUANTITY PER REEL

7" (180mm)

13" (330mm)

DEVICE MARKING

•

ZETEX
ZXBM
1004

ISSUE 6 - MAY 2007

12mm

12mm

500

2,500

1

ZXBM1004

SEMICONDUCTORS

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL LIMITS UNIT

Supply voltage V

Input current I

Input voltage V

Output voltage V
Power dissipation P

Operating temp. T

Storage temp. T

CCmax

CCmax

max

IN

OUT

Dmax

OPR

STG

max

-0.6 to 20 V

200 mA

-0.5 to V

-0.5 to V

-40 to 110 ⬚C

-55 to 150 ⬚C

+0.5 V

CC

+0.5 V

CC

500 mW

Power Dissipation

1) Maximum allowable Power Dissipation, PD,
is shown plotted against Ambient Temperature,
T

, in the accompanying Power Derating Curve,

A

indicating the Safe Operating Area for the device.

2) Power consumed by the device, P
calculated from the equation:

P

= PQ+ P

T

where PQis power dissipated under quiescent

and P

+ P

PhHi

PhLo

current conditions, given by:

P

= Vcc x Icc

Q

where Vcc is the application

device Supply Voltage

and Icc is the maximum Supply

Current given in the Electrical
Characteristics

is power generated due to eitheroneof

PhHi

the phase outputs Ph1Hi or Ph2Hi being
active, given by:

P

= IOLx V

PhHi

where IOLis the application Ph1Hi and Ph2Hi

and V

OL

output currents

is the maximum Low Level

OL

Output Voltage for the Ph1Hi and
Ph2Hi outputs given in the Electrical
Characteristics

, can be

T

and P

is power generated due to eitheroneof

PhLo

the phase outputs Ph1Lo or Ph2Lo being
active, given by:

P

= IOHx (VCC- VOH)

PhLo

where I

is the application Ph1Lo andPh2Lo

OH

output currents

and Vcc is the application device Supply

Voltage

and V

is the minimum High Level

OH

Output Voltage for the Ph1Lo and
Ph2Lo outputs given in the Electrical
Characteristics

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ZXBM1004

SEMICONDUCTORS

ELECTRICAL CHARACTERISTICS (at T

amb

PARAMETER SYMBOL

Supply voltage V

Supply current I

Hall amp input voltage V

Hall amp common mode voltage V

Hall amp input offset V

Hall amp bias current I

Ph1Lo, Ph2Lo output high voltage

Ph1Lo, Ph2Lo output low voltage

Ph1Lo, Ph2Lo output low voltage

Ph1Lo, Ph2Lo output source current

Ph1Lo, Ph2Lo output sink current

Ph1Hi, Ph2Hi output low voltage

Ph1Hi, Ph2Hi output sink current

C

charge current

PWM

discharge current I

C

PWM

high threshold voltage V

C

PWM

low threshold voltage V

C

PWM

PWM frequency F

ThRef voltage V

ThRef output current I

input current I

S

MIN

SPD voltage minimum V

SPD voltage maximum V

SPD input current I

C

charge current I

LCK

discharge current I

C

LCK

high threshold voltage V

C

LCK

low threshold voltage V

C

LCK

CC

CC

IN

CM

OFS

BS

V

OH

V

OLA

V

OLB

I

OH

I

OL

V

OL

I

OL

I

PWMC

PWMD

THH

THL

PWM

ThRef

OThRef

ISMIN

SPDL

SPDH

ISPD

LCKC

LCKD

THH

THL

Lock condition On:Off ratio

FG & RD output current I

FG & RD low level output voltage V

OL

OL

= 25°C & VCC= 12V)

MIN. TYP. MAX. UNIT

4.7 18 V

6 8.5 mA No load

40 mV diff p-p

0.5 VCC-1.5 V

⫾7mV

400 650 nA

VCC-2.2 VCC-1.8 V IOH=80mA

0.4 0.6 V IOL=16mA

0.4 0.6 V IOL=50␮A

-80 mA

16 mA

0.5 0.7 V

100 mA

-6.2 -7.6 -9 ␮ A

65 80 95 ␮ A

2.9533.15V

0.9411.11V

24 kHz

2.925 3.0 3.14 V

-0.2 -1 mA

-0.25 -0.5 ␮A

1V

3V

-0.8 -2 ␮ A

-2 -3 ␮A

0.2 0.35 ␮A

3V

1V

1:12

5mA

0.5 V

CONDITIONS

I

=100mA

OL

C

PWM

I

OThRef

Vin = 2V

100% PWM drive

0% PWM drive

Vin = 2V

I

=5mA

OI

(1)

(2)

(3)

=0.1nF

=-100␮A

Notes:
(1) Measured with pins H+, H-, C
(2) Measured when opposing phase output is low.
(3) Measured when opposing phase output is high.

and C

LCK

= 0V and all other signal pins open circuit.

PWM

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3

ZXBM1004

SEMICONDUCTORS

Vcc

SPD

H+

H-

Gnd

Ph1Lo

Ph2Lo

C

PWM

CLCK

FG

ZXBM1004

QSOP16

RD

V+OP

ThRef

S

MIN

1

Ph1Hi

Ph2Hi

Block diagram

Pin assignments

ISSUE 6 - MAY 2007

4

ZXBM1004

SEMICONDUCTORS

PIN FUNCTIONAL DESCRIPTION

H+ - Hall input
H- - Hall input

The rotor position is detected by a Hall sensor, with the
output applied to the H+ and H-pins. Thissensor can be
either a 4 pin 'naked' Hall device or of the 3 pin buffered
switching type. For a 4 pin device the differential Hall
output signal is connected to the H+ and H- pins. For a
buffered Hall sensor the Hall device output is attached
to the H+ pin, with a pull-up attached if needed, whilst
the H- pin has an external potential divider attached to
hold the pin at halfV
Ph2 is the active drive.

. When H+ is highin relation to H-,

cc

ThRef - Network Reference

This is a reference voltage of nominal 3V. It is designed
for the ability to 'source' and therefore it will not 'sink'
any current from a higher voltage.

The total current drawn from the pin by the minimum
speed potential divider to pin S
setting network should not exceed 1mA at maximum
temperature.

and any voltage

MIN

SPD - Speed Control Input

The voltage applied to the SPD pin provides control
over the Fan Motor speed by varying the Pulse Width
Modulated (PWM) drive ratio at the Ph1Lo and Ph2Lo
outputs. The control signal takes the form of a voltage
input of range 3V to 1V, representing 0% to 100% drive
respectively.

If variable speed control is not required this pin can be
left with an external potential divider to set a fixed
speed or tied to ground to provide full speed i.e. 100%
PWM drive.

If required this pin can also be used as an enable pin.
The application of a voltage >3.0V will force the PWM
drive fully off, in effect disabling the drive.

S

- Sets Minimum Speed

MIN

A voltage can be set on this pin via a potential divider
between the ThRef and Gnd. This voltage is monitored
by the SPD pin such that it cannot rise above it. As a
higher voltage on the SPD pin representsa lower speed
it therefore restricts the lower speed range of the fan. If
this feature is not required the pin is lefttied to ThRef so
no minimum speed will be set.

If the fan is being controlled from an external voltage
source onto the SPD pin then either this feature should
not be used or if it is required then a >1k⍀ resistor
should be placed in series with the SPD pin.

C

- Sets PWM Frequency

PWM

This pin has an external capacitor attached to set the
PWM frequency for the Phase drive outputs. A
capacitor value of 0.1nF will provide a PWM frequency
of typically 24kHz.

The C
following equation:

T

PWM

Where: C = C

timing period (T

PWM

VVxCIVVxC

−

THH THL

=

PWMC

+15, in pF

PWM

V

and V

THH

threshold voltages
I

and I

PWMC

discharge currents in ␮A.
T

PWM

PWMD

is in ms

) is determined by the

PWM

−()()

THH THL

+

I

PWMD

are the C

THL

are the charge and

PWM

pin

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5

ZXBM1004

SEMICONDUCTORS

As thesethreshold voltages are nominally set to V
3V and V
follows:

T

=+

PWM

C

LCK

Should the fan stop rotating for any reason, i.e. an
obstruction in the fan blade or a seized bearing, then
the device will enter a Rotor Locked condition. In this
condition after a predetermined time (T
will go high and the Phase outputs will be disabled.
After a further delay (T
the Phasedrive for a defined period (T
to re-start the fan. This cycle of (T
repeated indefinitely or until the fan re-starts.

= 1V the equations can be simplified as

THL

C

22

I

PWMC PWMD

C

I

- Locked rotor timing capacitor

LOCK

) the controller will re-enable

OFF

) in an attempt

ON

) and (TON) will be

OFF

THH

) the RD pin

GND - Ground

This is the device supply ground return pin and will
generally be the most negative supply pin to the fan.

RD - Locked Rotor error output

This pin is the Locked Rotor output as referred to in the
C

timing section above. It is high when the rotor is

LCK

stopped and low when it is running.

This is an open collector drive giving an active pull
down withthe high level being provided by an external
pull up resistor.

FG - Frequency Generator (speed) output

This is the Frequency Generator output and is a
buffered signal from the Hall sensor.

Ph1Lo & Ph2Lo - Low-side External

=

H-bridge Driver

This pair of outputs drive the Low side of the external
high power H-bridge devices which in turn drives the
single phase winding. These outputs provide both the
commutation and PWM waveforms. The outputs are of
the Darlington emitter follower type with an active
pull-down to help faster switch off when using bipolar
devices. When in the high state the outputswill provide
up to 80mA of drive into the base or gates of external
transistors as shown in the Typical Application circuit
following.

When in the low state the active Phase drive is capable
of sinking up to 16mA when driving low to aid turn off
times during PWM operation. When the Phase is
inactive the output is held low by an internal pull-down
resistor.

Ph1Hi & Ph2Hi - High-side External H-bridge
Driver

These are the High side outputs to the external
H-bridge and are open collector outputs capable of
sinking 100mA. This signal provides commutation only
to the H-bridge.

V+OP - Phase Outputs Supply Voltage

This pin is the supply to the Phase outputs and will be
connected differently dependant upon external
transistor type.

For bipolar devices this pin will be connected by a
resistor to the V
the current into the transistor base so its value is
chosen accordingly.

For MOSFET devices the pin will connect directly to the
V

pin.

CC

pin. The resistor is used to control

CC

This is an open collector drive giving an active pull
down withthe high level being provided by an external
pull up resistor.

ISSUE 6 - MAY 2007

6

VCC- Applied Voltage

SEMICONDUCTORS

TLock

TOff

TOn

Hall

C

LCK

FG

RD

VTHH

VTHL

This is the device internal circuitry supply voltage. For
5V to 12V fans thiscan be supplied directly fromthe Fan
Motor supply. For fans likely to run in excess of the 18V
maximum rating for the device this will be supplied
from an external regulator such as a Zener diode.

RD Timing Waveform:

ZXBM1004

Applications Information

The ZXBM1004 is primarily controlled by a voltage on
the SPD pin. A voltage of 1V represents a 100% PWM at
the Phase Outputs and in turn represents full speed. 3V
on the SPD pin conversely represents 0% PWM. The
motor cantherefore be controlled simply by applying a
control voltage onto the SPD pin with the minimal use
of external components.

This voltage control method easily lends itself to
control by other signal types. For example if a
thermistor is applied to the SPD pin a varying voltage
can be generated at the SPD pin as the resistance of the
thermistor varies with temperature.

ISSUE 6 - MAY 2007

A common form of control of fans is by a PWM signal
derived from a central processor or controller. This
signal can be converted into a voltage and that voltage
adjusted as neccesary to compensate for motor none
linearity, inclusion of the Minimum speed feature etc.

Full applications details and furtherexamples of how to
control the ZXBM1004 are available in the Applications
Notes AN41, AN42 and AN43.

7

ZXBM1004

SEMICONDUCTORS

Figure 1: Typical circuit for thermistor controlled speed

Figure 2: Typical circuit for external PWM controlled speed

ISSUE 6 - MAY 2007

8

SEMICONDUCTORS

Figure 3: Typical circuit for 48V input and external PWM control

ZXBM1004

Figure 4: Typical circuit for constant speed operation

ISSUE 6 - MAY 2007

9

ZXBM1004

SEMICONDUCTORS

Drive transisitors

Zetex offersa range of devices that are ideally suited to
interface between the ZXBM1004 controller and the
motor. The following tables show a selection of
products ranging from single packaged H-bridge
devices to individual power components that can be
used in this application. If your needs are not covered
by this selection then please refer to the the more
comprehensive listings that can be found on the Zetex
website: www.zetex.com

Description

MOSFET

Part Number

ZXMHC6A07T8

H-Bridge

ZXMHC3A01T8

N+P

ZXMC4559DN8
channel
MOSFET

Low side
switch
MOSFET

ZXMC3A16DN8

ZXMN10A09K

ZXMN6A09K

ZXMN3A04K

Description Part Number

High side
switch
Bipolar

ZXT953K

ZXT951K

ZXT790AK

Content BV

2 x N

2 x P

2 x N

2 x P

N

P

N

P

N

N

N

Content BV

PNP

PNP

PNP

DSS

V

60

-60

30

-30

60

-60

30

-30

100

60

30

CEO

V

-100

-60

-40

I

D

A

1.8

-1.5

3.1

-2.3

4.7

-3.5

6.4

-5.4

7.7

11.2

18.4

I

A

-5

-6

-3

I

DM

A

8.7

-7.5

14.5

-10.8

22

-18

30

-25

27

40

66

C

I

CM

A

-10

-15

-6

R

DS(on)

V

@ VGS=10V

max. m

300

425

120

210

55

105

35

48

85

45

20

at IC=2A

CE(sat)

max. mV

-175

-165

-450

Package

SM-8

SM-8

SO8

SO8

DPAK

Package

DPAK

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10

ZXBM1004

SEMICONDUCTORS

Definitions

Product change

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Customers are solely responsible for obtaining the latest relevant information before placing orders.

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The circuitsin this design/application noteare offered as designideas. It is theresponsibility of the userto ensure that thecircuit is fit forthe user's
application andmeets with theuser's requirements. Norepresentation orwarranty is givenand noliability whatsoever isassumed byZetex with
respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or
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breach ofstatutory duty, restriction or otherwise)for any damages, loss of profit, business,contract, opportunity or consequential lossin theuse
of these circuit applications, under any circumstances.

Life support

Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written
approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body
or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions

for use provided in the labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.

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The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in
writing) maynot be used, applied or reproduced for any purpose or form part ofany order or contractor be regarded as a representation relating
to the products or services concerned.

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All productsare sold subjects to Zetex' terms and conditions of sale, and this disclaimer (save in the event of a conflict betweenthe two when the
terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.

For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office.

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Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer.

To ensure quality of service and products we strongly advise the purchase ofparts directly from Zetex Semiconductors or one of our regionally
authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork

Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales
channels.

ESD (Electrostatic discharge)

Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The
possible damage to devices dependson the circumstances of the handling andtransporting, and the natureof the device. The extentof damage
can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of
being affected should be replaced.

Green compliance

Zetex Semiconductorsis committedto environmental excellence in all aspects of its operations which includesmeeting orexceeding regulatory
requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of
hazardous substances and/or emissions.

All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and
ELV directives.

Product status key:

"Preview"Future device intended for production at some point. Samples may be available
"Active"Product status recommended for new designs
"Last time buy (LTB)"Device will be discontinued and last time buy period and delivery is in effect
"Not recommended for new designs"Device is still in production to support existing designs and production
"Obsolete"Production has been discontinued
Datasheet status key:
"Draft version"This term denotes a very early datasheet version and contains highly provisional
information, which may change in any manner without notice.
"Provisional version"This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to
the test conditions and specifications may occur, at any time and without notice.
"Issue"This termdenotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and
without notice.

ISSUE 6 - MAY 2007

11

ZXBM1004

SEMICONDUCTORS

PACKAGE DIMENSIONSPACKAGE OUTLINE QSOP16

Dim

Inches

Min. Max. Min. Max.

A 0.053 0.069 1.35 1.75

A1 0.004 0.010 0.10 0.25

A2 0.049 0.059 1.25 1.50

D 0.189 0.197 4.80 5.00

ZD

0.009 Ref 0.23 BSC

E 0.228 0.244 5.79 6.20

E1 0.150 0.157 3.81 3.99

L

0.016 0.050 0.41 1.27

e 0.025 BSC 0.64 BSC

b 0.008 0.012 0.20 0.30

c 0.007 0.010 0.18 0.25

θ

0° 8° 0° 8°

Note: Dimensions in inches are control dimensions, dimensions in millimeters are approximate.

Millimeters

© Zetex Semiconductors plc 2007

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12

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ISSUE 6 - MAY 2007