Diodes ZX5T949G User Manual
30V PNP LOW SATURATION TRANSISTOR IN SOT223
SUMMARY
CEO
= -30V : R
BV
DESCRIPTION
Packaged in the SOT223 outline this new 5thgeneration low saturation 30V
PNP transistoroffers extremely low on state losses making it ideal for use in
DC-DC circuits and various driving and power management functions.
= 31m ; IC= -5.5A
SAT
ZX5T949G
FEATURES
5.5 Amps continuous current
•
Up to 20 Amps peak current
•
Very low saturation voltages
•
Exceptional gain linearity down to 10mA
•
APPLICATIONS
•
DC - DC Converters
•
MOSFET gate drivers
•
Charging circuits
•
Power switches
•
Motor control
ORDERING INFORMATION
DEVICE REEL
ZX5T949GTA
ZX5T949GTC
SIZE
7”
13”
TAPE
WIDTH
12mm
embossed
DEVICE MARKING
•
X5T949
QUANTITY PER
REEL
1,000 units
4,000 units
2
2
T
O
S
PINOUT
3
ISSUE 1 - NOVEMBER 2003
TOP VIEW
1
SEMICONDUCTORS
ZX5T949G
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Collector-base voltage BV
Collector-emitter voltage BV
Emitter-base voltage BV
Continuous collector current
(a)
Peak pulse current I
(a)
Power dissipation at T
=25°C
A
CBO
CEO
EBO
I
C
CM
P
D
Linear derating factor
Power dissipation at T
=25°C
A
(b)
P
D
Linear derating factor
Operating and storage temperature range T
j,Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to ambient
Junction to ambient
NOTES
(a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(a)
(b)
R
R
⍜JA
⍜JA
-50 V
-30 V
-7 V
-5.5 A
-20 A
3.0
24
1.6
12.8
W
mW/°C
W
mW/°C
-55 to 150 °C
42 °C/W
78 °C/W
SEMICONDUCTORS
ISSUE 1 - NOVEMBER 2003
2
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