Diodes ZX5T851G User Manual

y
Product Line o
Green
60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
Features
BV
I
I
Low Saturation Voltage V
R
h
Complementary PNP Type: ZX5T951G
Lead-Free Finish; RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
> 60V
CEO
= 6A high Continuous Collector Current
C
= 20A Peak Pulse Current
CM
= 35m for a low equivalent On-Resistance
SAT
specified up to 10A for a high gain hold up
FE
CE(sat)
SOT223
Top View
< -60mV @ -1A
Device S
Mechanical Data
Case: SOT223
Case material: molded plastic. “Green” molding compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.112 grams (approximate)
Applications
Emergency lighting circuits
MOSFET & IGBT gate drivers
Solenoid, relay and actuator drivers
DC Modules
Motor control
mbol
Diodes Incorporated
ZX5T851G
Top View
Pin-Out
Ordering Information (Note 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
ZX5T851GTA X5T851 7 12 1,000
ZX5T851GTC X5T851 13 12 4,000
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com
Marking Information
ZX5T851G
Document Number DS33421 Rev. 3 - 2
X5T
FZT
651
851
X5T851 = Product Type Marking Code
1 of 7
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θ
θ
θ
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Power Dissipation Linear derating factor
Thermal Resistance, Junction to Ambient
(Note 5)
(Note 6)
(Note 5)
(Note 6)
Thermal Resistance Junction to Lead (Note 7) Operating and Storage Temperature Range
ESD Ratings (Note 8)
V
CBO
V
CEO
V
EBO
I
I
CM
P
R
R
R
T
J, TSTG
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Diodes Incorporated
ZX5T851G
C
D
JA
JA
JL
150 V
60 V
7 V 6 A
20 A
3.0 24
1.6
W
mW /°C
12.8 42
78
°C/W
10.48
-55 to +150 °C
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Machine Model ESD MM 400 V C
Notes: 5. For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
6. Same as note (5), except the device is surface mounted on 25mm x 25mm with 1oz copper.
measured when operating in a steady-state condition.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZX5T851G
Document Number DS33421 Rev. 3 - 2
2 of 7
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January 2013
© Diodes Incorporated
Thermal Characteristics and Derating Information
V
CE(sat)
10
Limit
DC
1s
100ms
Single Pulse. T
52mmX52mm FR4
2oz Cu
amb
=25°C
10ms
1ms
100µs
100m
Collector Current (A)
C
I
10m
1
100m 1 10 100
VCE Collector-Emitter Voltage (V)
Safe Operating Area
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3.0
2.5
2.0
52mmX52mm FR4
2oz Cu
1.5
1.0
0.5
25mmX25mm FR4
1oz Cu
0.0 0 20 40 60 80 100 120 140 160
Max Power Dissipation (W)
Temperature (°C)
Derating Curve
ZX5T851G
52mmX52mm FR4
40
2oz Cu
30
D=0.5
20
D=0.2
Single Pulse
10
D=0.05
D=0.1
0
100µ 1m 10m 100m 1 10 100 1k
Thermal Resistance (°C/W)
Pulse Width (s)
Transient Thermal Impedance
100
Single Pulse. T
52mmX52mm FR4
amb
2oz Cu
10
1
100µ 1m 10m 100m 1 10 100 1k
Max Power Dissipation (W)
Pulse Width (s)
Pulse Power Dissipation
=25°C
ZX5T851G
Document Number DS33421 Rev. 3 - 2
3 of 7
www.diodes.com
January 2013
© Diodes Incorporated
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