Diodes ZX5T3Z User Manual

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Green

40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89

Features

Mechanical Data

Diodes Incorporated

ZX5T3Z

 BV  I  I  R  Low Saturation Voltage V  h  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP capable (Note 4)

> -40V

CEO

= -5.5A High Continuous Current

C

= -15A Peak Pulse Current

CM

= 29mΩ for a low equivalent On-Resistance

CE(SAT)

< -60mV @ -1A

CE(SAT)

Specified Up to -10A for High Current Gain Hold Up

FE

SOT89

Top View

B

Device Symbol

 Case: SOT89  Case Material: Molded Plastic. “Green” Molding Compound.  UL Flammability Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish - Matte Tin Plated Leads, Solderable per

MIL-STD-202, Method 208

 Weight: 0.05 grams (Approximate)

Applications

 Charging Circuits  DC-DC Converters  MOSFET and IGBT Gate Driving  Power Switches  Motor Control

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B

E

Top View

Pin Out

Ordering Information (Note 5)

Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel

ZX5T3ZTA AEC-Q101 53Z 7 12 1,000

ZX5T3ZQTA Automotive 53Z 7 12 1,000

ZX5T3ZTC AEC-Q101 53Z 13 12 4,000

ZX5T3ZQTC Automotive 53Z 13 12 4,000

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

5. For packaging details, go to our website at http”//www.diodes.com/products/package s.html.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified.

Marking Information

ZX5T3Z

tasheet Number: DS33419 Rev. 2 - 2

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789

53Z

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53Z = Product Type Marking Code

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Maximum Ratings (@T

= +25°C, unless otherwise specified.)

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Characteristic Symbol Limit Unit

Collector-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

(Note 6)

Power Dissipation

(Note 7) 1.5 (Note 8) 2.1 (Note 9) 3.0 (Note 6)

Thermal Resistance, Junction to Ambient Air

(Note 7) 83 (Note 8) 60

(Note 9) 42 Thermal Resistance, Junction to Lead (Note 10) Operating and Storage Temperature Range

ESD Ratings (Note 11)

V

CBO

V

CBS

V

CEO

V

EBO

I

CM

P

R

T

J, TSTG

C

θJA

θJL

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ZX5T3Z

D

-50 V

-40 V

-7.5 V

-5.5 A

-15 A

0.9 W

139

C/W



2.81

-55 to +150

C/W

C

Characteristic Symbol Value Unit JEDEC Class

Electrostatic Discharge - Human Body Model ESD HBM ≥ 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM ≥ 400 V C

Notes: 6. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.

7. Same as note (6), except the device is mounted on 25mm x 25mm 1oz copper.

8. Same as note (6), except the device is mounted on 50mm x 50mm 1oz copper.

9. Same as note (6), except the device is mounted on 25mm x 25mm 1oz copper and measured at t<5secs.

10. Thermal resistance from junction to solder-point (on the exposed collector pad).

11. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

ZX5T3Z

tasheet Number: DS33419 Rev. 2 - 2

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Thermal Characteristics and Derating Information

V

CE(sat)

Limit

10

1

100m

Collector Current (A)

C

10m

-I

100m 1 10

DC

1s

100ms

Single Pulse. T

25mmX25mm 1oz Cu

amb

=25°C

10ms

1ms

100µs

-VCE Collector-Emitter Voltage (V)

Safe Operating Area

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ZX5T3Z

2.0

50mmX50mm 1oz Cu

1.5

25mmX25mm 1oz Cu

1.0

0.5

15mmX15mm 1oz Cu

0.0 0 20406080100120140160

Max Power Dissipation (W)

Temperature (°C)

Deratin g Curve

80

25mmX25mm 1oz Cu

60

D=0.5

40

D=0.2

Single Pulse

20

D=0.05

D=0.1

0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resist ance (° C/W)

Pulse Width (s)

Max Power Dissipat i on (W)

Transient Thermal Impedance

100

Single Puls e. T

25mmX25mm 1oz Cu

amb

=25°C

10

1

100µ 1m 10m 100m 1 10 100 1k

Pul se Width (s)

Pulse Power Dissipation

ZX5T3Z

tasheet Number: DS33419 Rev. 2 - 2

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Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 12) Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current

BV BV BV BV

I I I

CBO CES CEO

EBO CBO CES EBO

-50 -90 — V

-40 -58 — V

-7.5 -8.3 — V — <1 -20 nA — <1 -20 nA — <1 -20 nA

200

DC Current Transfer Static Ratio (Note 12)

h

FE

200 170 110

—

Collector-Emitter Saturation Voltage (Note 12)

Base-Emitter Saturation Voltage (Note 12)

Base-Emitter Turn-On Voltage (Note 12)

Transitional Frequency Output Capacitance

Switching Times

V

CE(SAT)

V

BE(SAT)

V

BE(ON)

C

f

T

obo

t

d

tr

ts

— —

—

— 152 — MHz — 53 — pF

—

tf

t

d

Switching Times

tr

ts

—

tf

Note: 12. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.

390 350 290 175

-15

-44

-50

-120

-70

-125

-130

-162

-820

-1000

-778

-869

18 17

325

60

55 107 264 103

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Diodes Incorporated

ZX5T3Z

IC = -100µA IC = -100µA IC = -10mA IE = -100µA V

CB

V

CE

VEB = -6V

= -10mA, VCE = -2V

I

—

550

— —

—

-30

-60

-70

-165

-80

mV

-175

-185

-900

-1075

-850

-950

V

C

= -0.5A, VCE = -2V

I

C

I

= -2A, VCE = -2V

C

= -5.5A, VCE = -2V

I

C

= -0.1A, IB = -10mA

I

C

= -1A, IB = -100mA

I

C

I

= -1A, IB = -50mA

C

I

= -1A, IB = -10mA

C

= -2A, IB = -200mA

I

C

I

= -2A, IB = -40mA

C

I

= -3.5A, IB = -175mA

C

I

= -5.5A, IB = -550mA

C

I

= -2A, IB = -40mA

C

I

= -5.5A, IB = -550mA

C

I

= -2A, VCE = -2V

C

= -5.5A, VCE = -2V

I

C

= -50mA, VCE = -10V

I

C

f = 100MHz V

CB

I

= -1A, VCC = -10V

— nS

C

= -IB2 = -100mA

I

B1

I

= -2A, VCC = -30V

C

= -IB2 = -20mA

I

B1

= -40V = -32V

= -10V, f = 1MHz,

ZX5T3Z

tasheet Number: DS33419 Rev. 2 - 2

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Typical Electrical Characteristics (@T

1

100m

Tamb=25°C

IC/IB=100

IC/IB=50

IC/IB=200

(V)

10m

CE(SAT)

- V

1m

1m 10m 100m 1 10

IC/IB=20

- IC Collec tor C urrent (A)

V

CE(SAT)

v I

C

= +25°C, unless otherwise specified.)

A

1.0

IC/IB=100

0.8

0.6

(V)

IC/IB=10

0.4

CE(SAT)

- V

0.2

0.0 100m 1

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ZX5T3Z

100°C

25°C

- IC Collector Current (A)

V

CE(SAT)

v I

C

-55°C

1.4

100°C

1.2

1.0

25°C

0.8

0.6

-55°C

0.4

Normalised Gain

0.2

0.0 1m 10m 100m 1 10

- IC Collector Current (A)

hFE v I

1.2

VCE=2V

1.0

25°C

0.8

(V)

C

-55°C

VCE=2V

600

500 400

300 200

100 0

IC/IB=100

1.0

-55°C

)

FE

0.8

25°C

(V)

0.6

BE(SAT)

- V

Typical Gain (h

0.4

1m 10m 100m 1

100°C

- IC Collector Current (A)

V

BE(SAT)

v I

C

BE(ON)

0.6

- V

0.4

1m 10m 100m 1 10

100°C

- IC Collector Current (A)

V

BE(ON)

ZX5T3Z

tasheet Number: DS33419 Rev. 2 - 2

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Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

D1

0

2

.

0

R

1

E

H

B1

e

8° (4X)

L

B

A

D

C

Dim Min Max

H

A 1.40 1.60 B 0.44 0.62

B1 0.35 0.54

C 0.35 0.44 D 4.40 4.60

D1 1.62 1.83

E 2.29 2.60

e 1.50 Typ

H 3.94 4.25

H1 2.63 2.93

L 0.89 1.20 All Dimensions in mm

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Y3

Y

X (3x)

X1

X2 (2x)

Y2

Dimensions Value (in mm)

X 0.900

Y1

Y4

C

X1 1.733 X2 0.416

Y 1.300 Y1 4.600 Y2 1.475 Y3 0.950 Y4 1.125

C 1.500

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ZX5T3Z

SOT89

ZX5T3Z

tasheet Number: DS33419 Rev. 2 - 2

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Onl y the English version of this document is the final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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ZX5T3Z

Product Line o

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tasheet Number: DS33419 Rev. 2 - 2

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