Page 1
ZX5T2E6
2 0V PNP LOW SAT MEDIUM POWER TRA NSISTOR IN SOT23- 6
SUMM ARY
BV
= -20V : R
CEO
= 31m ; IC= -3.5A
SAT
DESCRIPTION
Pac kage d in the SOT23-6 outline this new 5
generation low saturation 20V PNP transistor offers
extremely low on state losses making it ideal for use in
DC-D C circuit s and various driving and power
management func tions .
th
FEATURES
3 .5 A mps cont inuous c urre nt
•
Extremely low saturation voltage (-70mV max @ 1A/100mA )
•
Up to 10 Amps pea k c urre nt
•
• Ve ry low s at ura t ion v olt age s
APPLICATIONS
•
DC - DC c onv erters
•
Bat t ery c ha rging
•
Power sw itc hes
•
Motor cont rol
T
S
2
3
-
O
6
•
Pow er management func tions
ORDERING INFORMATION
DEVICE REEL
ZX5T2E6TA
ZX5T2E6TC 13” 8mm embossed 10,000
SIZE
7” 8mm embossed 3,000
TAPE WIDTH
QUANTITY PER REEL
DEVICE MARKING
•
52
ISSUE 1 - MAY 2004
1
PINOUT
TOP VIEW
SEMICONDUCTORS
Page 2
ZX5T2E6
ABS OLUT E MA X IMUM RA T I NGS
PAR AMET ER SYMBO L LIMIT UNIT
Collector-base volt age BV
Colle ctor-emitt er voltage BV
Emitter-base volt age BV
Continuous collector c urrent I
Peak pulse curre nt I
Pow e r dissipation at T
= 25° C
A
(a)
P
Linear derating factor
Pow e r dissipation at T
= 25° C
A
(b)
P
Linear derating factor
Operating a nd storage temperat ure range T
CBO
CEO
EBO
C
CM
D
D
j,Tstg
-25
-20 V
-7.5 V
-3.5 A
-10 A
1.1
8.8
1.7
13.6
-55 to + 150 °C
THERMAL RESIST A NCE
PAR AMET ER SYMBOL VALUE UNIT
Junction to ambient
Junction to ambient
NOTES
(a) F or a de vice surfac e mount ed on 2 5mm x 2 5mm x 0 .6mm FR4 PCB w it h high c ov era ge of s ingle s ide d 1oz c opper, in still air c onditions.
(b) A s abov e meas ured at t < 5 s ec onds .
(a)
(b)
R
R
⍜JA
⍜JC
113 ° C/W
73 ° C/W
V
W
mW/° C
W
mW/° C
SEMICONDUCTORS
ISSUE 1 - MAY 2004
2
Page 3
CHARACTERISTICS
ZX5T2E6
ISSUE 1 - MAY 2004
3
SEMICONDUCTORS
Page 4
ZX5T2E6
ELECTRICAL CHARACTERISTICS (at T
= 25° C unles s ot herwis e s t a t ed)
amb
PARAMET ER SYMBOL MIN. TYP. MAX. UNIT COND ITIONS
Colle ctor-base break down voltage BV
Colle ctor-emitt er breakdown volt a ge BV
Emitter-base break down voltage BV
Colle ctor cut-off current I
Colle ctor cut-off current I
Emitter cut-off current I
Colle ctor-emitt er satura tion voltage V
Base-emitter saturation voltage V
Base-emitter turn-on volta ge V
St a tic forward curre nt transfer ratio h
Transition frequency f
CBO
CEO
EBO
CBO
CES
EBO
CE(SAT)
BE(SAT)
BE(ON)
FE
T
-25 -49 V
I
= -100A
C
-20 -43 V IC= -10mA *
-7.5 -8.4 V
I
= -100A
E
-100 nA VCB= -20V
-100 nA VCB= -20V
-100 nA VEB=-6V
-10
-15
mV
IC= -0.1A, IB= -10mA*
=-1A,IB= -10mA*
-100
-110
-140
-130
mV
mV
I
C
= -3.5A, IB= -350mA*
I
C
-0.96 -1.1 V IC= -3.5A, IB= -350mA*
-0.8 -0.9 V IC= -3.5A, VCE=-2V*
300
300
150
10
575
450
285
40
900
I
= -10mA, VCE=-2V*
C
=-1A,VCE=-2V*
I
C
= -3.5A, VCE=-2V*
I
C
= -10A, VCE=-2V*
I
C
110 IC= -50mA, VCE= -10V
f = 50MHz
Out put capac itance C
Switching times t
t
OBO
ON
OFF
45 pF VCB=-10V,f=1MHz*
90
325
nsnsIC=-2A,VCC= -10V,
I
B1=IB2
= -40mA
NOTES
* Me as ured under puls e d c ondit ions . Pulse w idt h ⱕ 300s; duty cycleⱕ2%.
SEMICONDUCTORS
4
ISSUE 1 - MAY 2004
Page 5
TYPICAL CHARACTERISTICS
ZX5T2E6
ISSUE 1 - MAY 2004
5
SEMICONDUCTORS
Page 6
ZX5T2E6
PACKAGE OUTLINE
PAD LA Y OUT DETA ILS
Controlling dimensions are in millimeters . A pprox imat e c onv ers ions are giv en in inches
PA CKAGE D I ME NSI O NS
DIM
Millimeters Inches
Min Max Min Max Min Max Min Max
DIM
A 0.90 1.45 0.035 0.057 E 2.20 3.20 0.0866 0.118
A1 0.00 0.15 0.00 0.006 E1 1.30 1.80 0.0511 0.071
A2 0.90 1.30 0.035 0.051 L 0.10 0.60 0.004 0.024
b 0.20 0.50 0.008 0.020 e 0.95 REF 0.037 REF
C 0.09 0.26 0.003 0.010 e1 1.90 REF 0.075 REF
D 2.70 3.10 0.106 0.122
Millimeters Inches
0° 30° 0° 30°
⍜
©Z etex Semic onduc tors plc 2004
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ISSUE 1 - MAY 2004
SEMICONDUCTORS
6
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