Diodes ZX5T2E6 User Manual

ZX5T2E6

2 0V PNP LOW SAT MEDIUM POWER TRA NSISTOR IN SOT23- 6

SUMM ARY
BV

= -20V : R

CEO

= 31m ; IC= -3.5A

SAT

DESCRIPTION

Pac kage d in the SOT23-6 outline this new 5
generation low saturation 20V PNP transistor offers
extremely low on state losses making it ideal for use in
DC-D C circuit s and various driving and power
management func tions .

th

FEATURES

3 .5 A mps cont inuous c urre nt

•

Extremely low saturation voltage (-70mV max @ 1A/100mA )

•

Up to 10 Amps pea k c urre nt

•

• Ve ry low s at ura t ion v olt age s

APPLICATIONS

•

DC - DC c onv erters

•

Bat t ery c ha rging

•

Power sw itc hes

•

Motor cont rol

T

S

2

3

-

O

6

•

Pow er management func tions

ORDERING INFORMATION

DEVICE REEL

ZX5T2E6TA
ZX5T2E6TC 13” 8mm embossed 10,000

SIZE

7” 8mm embossed 3,000

TAPE WIDTH

QUANTITY PER REEL

DEVICE MARKING

•

52

ISSUE 1 - MAY 2004

1

PINOUT

TOP VIEW

SEMICONDUCTORS

ZX5T2E6

ABS OLUT E MA X IMUM RA T I NGS

PAR AMET ER SYMBO L LIMIT UNIT

Collector-base volt age BV
Colle ctor-emitt er voltage BV
Emitter-base volt age BV
Continuous collector c urrent I
Peak pulse curre nt I
Pow e r dissipation at T

= 25° C

A

(a)

P
Linear derating factor
Pow e r dissipation at T

= 25° C

A

(b)

P
Linear derating factor

Operating a nd storage temperat ure range T

CBO
CEO

EBO
C
CM

D

D

j,Tstg

-25

-20 V

-7.5 V

-3.5 A

-10 A

1.1

8.8

1.7

13.6

-55 to + 150 °C

THERMAL RESIST A NCE

PAR AMET ER SYMBOL VALUE UNIT

Junction to ambient
Junction to ambient

NOTES
(a) F or a de vice surfac e mount ed on 2 5mm x 2 5mm x 0 .6mm FR4 PCB w it h high c ov era ge of s ingle s ide d 1oz c opper, in still air c onditions.
(b) A s abov e meas ured at t < 5 s ec onds .

(a)
(b)

R
R

⍜JA
⍜JC

113 ° C/W

73 ° C/W

V

W

mW/° C

W

mW/° C

SEMICONDUCTORS

ISSUE 1 - MAY 2004

2