Diodes ZVP4525Z User Manual

SEMICONDUCTORS

250V P-CHANNEL ENHANCEMENT MODE MOSFET

D

D

S

G

SUMMARY

V

(BR)DSS

DESCRIPTION

This 250V enhancement mode P-channel MOSFET provides users with a
competitive specification offering efficient power handling capability, high
impedance and is free from thermal runaway and thermally induced
secondary breakdown. Applications benefiting from this device include a
variety of Telecom and general high voltage switching circuits.

SOT223 and SOT23-6 versions are also available.

FEATURES

•

•

•

•

•

•

=-250V; R

High voltage

Low on-resistance

Fast switching speed

Low gate drive

Low threshold

Complementary N-channel Type ZVN4525Z

=14 ; ID=-205mA

DS(ON)

ZVP4525Z

SOT89

•

SOT89 package

APPLICATIONS

•

Earth Recall and dialling switches

•

Electronic hook switches

•

High Voltage Power MOSFET Drivers

•

Telecom call routers

•

Solid state relays

ORDERING INFORMATION

DEVICE REEL SIZE

ZVP4525ZTA 7 12mm embossed 1000 units

ZVP4525ZTC 13 12mm embossed 4000 units

DEVICE MARKING

•

P52

ISSUE 2 - JUNE 2007

(inches)

TAPE WIDTH (mm) QUANTITY

PER REEL

1

Top View

ZVP4525Z

SEMICONDUCTORS

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL LIMIT UNIT

V

I

D

I

D

I

DM

S

SM

P

DSS

GS

D

:T

j

stg

Drain-Source Voltage

Gate Source Voltage V

Continuous Drain Current (VGS=10V; TA=25°C)(a)

(VGS=10V; TA=70°C)(a)

Pulsed Drain Current (c)

Continuous Source Current (Body Diode) I

Pulsed Source Current (Body Diode) I

Power Dissipation at TA=25°C (a)
Linear Derating Factor

Operating and Storage Temperature Range T

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient (a)

Junction to Ambient (b)

NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.

R

R

θJA

θJA

250 V

±40

-205

-164

-1 A

-0.75 A

-1 A

1.2

9.6

-55 to +150 °C

103 °C/W

50 °C/W

V

mA
mA

W
mW/°C

NB High Voltage Applications

For high voltage applications, the appropriate industry sector guidelines should be considered with regard to
voltage spacing between conductors.

ISSUE 2 - JUNE 2007

2

SEMICONDUCTORS

CHARACTERISTICS

1 10 100

1m

10m

100m

1

Single Pulse

T

amb

=25°C

R

DS(on)

Limit

100µs

1ms

10ms

100ms

1s

DC

Safe Operating Area

I

C

Collector Current (A)

VCECollector-Emitter Voltage (V)

0 20 40 60 80 100 120 140 160

0.0

0.2

0.4

0.6

0.8

1.0

1.2

Derating Curve

Temperature (°C)

Max Power Dissipation (W)

100µ 1m 10m 100m 1 10 100 1k

0

20

40

60

80

100

120

T

amb

=25°C

Transient Thermal Impedance

D=0.5

D=0.2

D=0.1

Single Pulse

D=0.05

Thermal Resistance (°C/W)

Pulse Width (s)

100µ 1m 10m 100m 1 10 100 1k

0.1

1

10

100

Single Pulse

T

amb

=25°C

Pulse Power Dissipation

Pulse Width (s)

Maximum Power (W)

ZVP4525Z

ISSUE 2 - JUNE 2007

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