Diodes ZVP4525G User Manual

250V P-CHANNEL ENHANCEMENT MODE MOSFET

ZVP4525G

SUMMARY
V

(BR)DSS

=-250V; R

=14V; ID=-265mA

DS(ON)

DESCRIPTION

This 250V enhancement mode P-channel MOSFET provides users with a
competitive specification offering efficient power handling capability, high
impedance and is free from thermal runaway and thermally induced
secondary breakdown. Applications benefiting from this device include a
variety of telecom and general high voltage circuits.

SOT89 and SOT23-6 versions are also available.

FEATURES

High voltage

•

Low on-resistance

•

Fast switching speed

•

Low gate drive

•

Low threshold

•

•

Complementary N-channel type ZVN4525G

•

SOT223 package

APPLICATIONS

•

Earth recall and dialling switches

•

Electronic hook switches

3

2

2

T

O

S

•

High voltage power MOSFET drivers

•

Telecom call routers

•

Solid state relays

ORDERING INFORMATION

DEVICE REEL SIZE TAPE WIDTH QUANTITY

ZVP4525GTA 7” 8mm embossed 1000 units
ZVP4525GTC 13” 8mm embossed 4000 units

PER REEL

DEVICE MARKING

•

ZVP4525G

ISSUE 4 - JUNE 2004

1

D

TOP VIEW

SEMICONDUCTORS

S
D

G

ZVP4525G

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL LIMIT UNIT

V

(a)
(a)

I
I

I

P

DSS

GS

D
D

DM

S

SM

D

Drain-source voltage
Gate source voltage V

Continuous drain current (V

=10V; TA=25°C)

GS

(VGS=10V; TA=70°C)

Pulsed drain current

(c)

Continuous source current (body diode) I
Pulsed source current (body diode) I

(a)

Power dissipation at T

=25°C

A

Linear derating factor
Operating and storage temperature range T

j:Tstg

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to ambient
Junction to ambient

NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.

(a)

(b)

R

θJA

R

θJA

250 V

±40

-265

-212

mA
mA

-1 A

-0.75 A

-1 A
2

16

mW/°C

-55 to +150 °C

63 °C/W
26 °C/W

V

W

NB High voltage applications

For high voltage applications, the appropriate industry sector guidelines should be considered with regard to
voltage spacing between conductors.

ISSUE 4 - JUNE 2004

SEMICONDUCTORS

2

CHARACTERISTICS

ZVP4525G

ISSUE 4 - JUNE 2004

3

SEMICONDUCTORS