Diodes ZVP4105A User Manual

P-CHANNEL ENHANCEMENT

ZVP4105A

MODE VERTICAL DMOS FET

ISSUE 2  MARCH 94

FEATURES *50 Volt V *R * Low threshold

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Drain-Source Voltage V

Continuous Drain Current at T

Pulsed Drain Current I

Gate Source Voltage V

Power Dissipation at T

Operating and Storage Temperature Range T

DS(on)

DS

=10Ω

=25°C I

amb

=25°C P

amb

DS

D

DM

GS

tot

j:Tstg

D G S

E-Line

TO92 Compatible

-50 V

-175 mA

-520 mA

± 20

625 mW

-55 to +150 °C

V

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.

Drain-Source Breakdown Voltage

Gate-Source Threshold Voltage

Gate-Body Leakage I

Zero Gate Voltage Drain Current

Static Drain-Source On-State Resistance (1)

Forward Transconductance (1)(2)

Input Capacitance (2)(4) C

Common Source Output Capacitance (2)(4)

Reverse Transfer Capacitance (2)(4)

Turn-On Delay Time (2)(3)(4) t

Rise Time (2)(3)(4) t

Turn-Off Delay Time (2)(3)(4) t

Fall Time (2)(3)(4) t

(1) Measured under pulsed conditions. Width=300

BV

V

GS(th)

GSS

I

DSS

R

DS(on)

g

fs

iss

C

oss

C

rss

d(on)

r

d(off)

f

-50 V ID=-0.25mA, VGS=0V

DSS

-0.8 -2.0 V ID=-1mA, VDS= V

10 nA

-15

µA

-60

µA

-100

nA

10

Ω

=± 20V, V

V

GS

V

=-50V, VGS=0V

DS

V

=-50V, VGS=0V, T=125°C(2)

DS

VDS=-25V, VGS=0V

VGS=-5V,ID=-100mA

50 mS VDS=-25V,ID=-100mA

40 pF

15 pF VDS=-25V, VGS=0V, f=1MHz

6pF

10 ns

10 ns

18 ns

V

DD

25 ns

µs. Duty cycle ≤2%

≈-30V, I

(2) Sample test. (3) Switching times measured with 50

Ω source impedance and <5ns rise time on a pulse generator

3-435

GS

=0V

DS

=-270mA

D

( 4 )

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