Diodes ZVP3310F User Manual

SOT23 P-CHANNEL ENHANCEMENT

ZVP3310F

G

S

MODE VERTICAL DMOS FET

ISSUE 3  OCTOBER 1995 ✪

FEATURES * 100 Volt V *R

DS(on)

COMPLEMENTARY TYPE - ZVN3310F PARTMARKING DETAIL - MR

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Drain-Source Voltage V

Continuous Drain Current at T

Pulsed Drain Current I

Gate Source Voltage V

Power Dissipation at T

Operating and Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.

Drain-Source Breakdown Voltage

Gate-Source Threshold Voltage

Gate-Body Leakage I

Zero Gate Voltage Drain Current

On-State Drain Current(1) I

Static Drain-Source On-State Resistance (1)

Forward Transconductance (1)(2)

Input Capacitance (2) C

Common Source Output Capacitance (2)

Reverse Transfer Capacitance (2)

Turn-On Delay Time (2)(3) t

Rise Time (2)(3) t

Turn-Off Delay Time (2)(3) t

Fall Time (2)(3) t

(1) Measured under pulsed conditions. Width=300 (3) Switching times measured with 50

=20Ω

DS

=25°C I

amb

=25°C P

amb

BV

DSS

V

GS(th)

GSS

I

DSS

D(on)

R

DS(on)

g

fs

iss

C

oss

C

rss

d(on)

r

d(off)

f

Ω source impedance and <5ns rise time on a pulse generator

D

DS

D

DM

GS

tot

j:Tstg

= 25°C unless otherwise stated).

amb

-100 V

75 mA

-1.2 A

± 20

330 mW

-55 to +150 °C

-100 V ID=-1mA, VGS=0V

-1.5 -3.5 V ID=-1mA, VDS= V

-20 nA

-1

µA

-50

µA

=± 20V, V

V

GS

V

=-100V, VGS=0

DS

V

=-80V, VGS=0V, T=125°C(2)

DS

DS

GS

=0V

-300 mA VDS=-25 V, VGS=-10V

20

VGS=-10V, ID=-150mA

Ω

50 mS VDS=-25V, ID=-150mA

50 pF

15 pF VDS=-25V, VGS=0V, f=1MHz

5pF

8ns

8ns

8ns

V

DD

≈-25V, I

=-150mA

D

8ns

µs. Duty cycle ≤2% (2) Sample test.

3 - 4363 - 437

V

ZVP3310F

G

S

TYPICAL CHARACTERISTICS

-0.6

s) p

(Am

-0.4

t n

rre

u

-0.2

n C

i

Dra

-

0

I

(mS) ce

n

ucta d n

sco n

-Tra

s

f

g

100

100

90

90 80

80 70

70 60

60

50

50 40

40

30

30 20

20 10

10

-2 -4 -6 -8 -10

VDS- Drain Source

Voltage (Volts)

Saturation Characteristics

DS=

DS=

V

V

0

0

0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8

0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8

ID- Drain Current (Amps

Transconductance v drain current

-10V

-10V

)

V

-20V

-16V

-14V

-12V

-10V

-9V

-8V

-7V

-6V

-5V

-4V

ZVP3310F

GS=

-10

-8

-6

D=

I

-4

-2

0

0-2 -4 -6 -8 -10

V Drain Source

Gate Source Voltage

GS-

V

(Volts)

Voltage Saturation Characteristics

50

)

40

F p

(

30

ce n

ta ci

20

a p

-Ca

10

C

0

0 -20 -40 -60 -8 0

GS=

V

f

=1MHz

0V

VDS-Drain Source Voltage (Volts)

Capacitance v drain-source voltage

-0.3 A

-0.1 5A

-0.0 75A

iss

C

oss

C

rss

C

-16

) ts

l

-14

o V (

-12

e g

ta

-10

Vol

-8

ce r

-6

ou

-4

te S

-2

-Ga

S

0

G

V

0

Gate charge v gate-source voltage

VDS=

-25V

0.2 0.4 0.6 0.8 1.0 1.2

-50V

-100V

D= -

I

0.2A

Q-Charge (nC)

2.6

2.4

2.2

2.0

V d n

1.8

a

1.6

1.4

R

1.2

sed

i

1.0

al m

0.8

or

0.6

N

-40

-20 0 20 40 60 80

Normalised R

V

ID=-150mA

V

120

100 140 160

Tj-Junction Temperature (°C)

DS(on)

and V

GS(th)

v Temperature

GS=

-10V

GS=VDS

ID=-1mA

180

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