Diodes ZVP3310A User Manual

P-CHANNEL ENHANCEMENT

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easured

50Ω source

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ZVP3310A

MODE VERTICAL DMOS FET

ISSUE 2  MARCH 94

FEATURES * 100 Volt V *R

DS(on)

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Drain-Source Voltage V

Continuous Drain Current at T

Pulsed Drain Current I

Gate Source Voltage V

Power Dissipation at T

Operating and Storage Temperature Range T

=20Ω

DS

=25°C I

amb

=25°C P

amb

DS

D

DM

GS

tot

j:Tstg

D G S

E-Line

TO92 Compatible

-100 V

-140 mA

-1.2 A

± 20

625 mW

-55 to +150 °C

V

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.

Drain-Source Breakdown

BV

Voltage

Gate-Source Threshold Voltage

Gate-Body Leakage I

Zero Gate Voltage Drain Current

On-State Drain Current(1) I

Static Drain-Source On-State Resistance (1)

Forward Transconductance (1)(2)

Input Capacitance (2) C

Common Source Output Capacitance (2)

Reverse Transfer Capacitance (2)

Turn-On Delay Time (2)(3) t

Rise Time (2)(3) t

Turn-Off Delay Time (2)(3) t

Fall Time (2)(3) t

V

GS(th)

GSS

I

DSS

D(on)

R

DS(on)

g

fs

iss

C

oss

C

rss

d(on)

r

d(off)

f

(1) Measured under pulsed conditions. Width=300 (2) Sample test.

-100 V ID=-1mA, VGS=0V

DSS

-1.5 -3.5 V ID=-1mA, VDS= V

20 nA

-1

µA

-50

µA

=± 20V, V

V

GS

V

=-100V, VGS=0

DS

V

=-80V, VGS=0V, T=125°C(2)

DS

-300 mA VDS=-25 V, VGS=-10V

20

VGS=-10V,ID=-150mA

Ω

50 mS VDS=-25V,ID=-150mA

50 pF

15 pF VDS=-25V, VGS=0V, f=1MHz

5pF

8ns

8ns

8ns

V

DD

8ns

µs. Duty cycle ≤2%

≈-25V, I

3-432

hing times m

with

im

rise time on a pulse gener

GS

=0V

DS

=-150mA

D

( 3 )

r

S

tcgt

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ZVP3310A

TYPICAL CHARACTERISTICS

VGS=-20V

-0.6

Amps)

( nt

-0.4

e

r

r

u in C

-0.2

a

r D

-

D

I

0

-10

-8

-6

Voltage (Volts)

-4

-2

Drain Source

0

DS-

V

-16V

-12V

0 -10 -20 -30 -40 -50

VDS - Drain Source Voltage (Volts)

Output Characteristics

0-2-4-6-8-10

VGS-Gate Source Voltage (Volts)

Vo ltag e Sa turation Characteristics

-10V

-9V

-8V

-7V

-6V

-5V

-4.5V

-4V

-3.5V

ID=

-0.3A

-0.15A

-0.075A

ZVP3310A

-0.6

-0.4

-0.2

- Drain Current (Amps)

D

I

Amps)

(

nt

e

r

r

u

in C

a

r D

-

D

I

0

-0.6

-0.4

-0.2

0

-2 -4 -6 -8 -10

VDS - Drain Source Voltage (Volts)

Saturation Characteristics

VDS=

-10V

0-2 -4 -6 -8 -10

V

GS-Gate Source Voltage (Volts)

Transfer Characteristics

VGS=

-20V

-16V

-14V

-12V

-10V

-9V

-8V

-7V

-6V

-5V

-4V

(Ω)

10

RDS(on)-Drain Source On Resistance

VGS=-4V

100

50

-10

ID-Drain Current (mA)

On-resistance v drain current

-8V

-7V

-10V

-20V

-6V

-5V

-100 -1000

2.6

2.4

2.2

GS(th)

2.0

and V

1.8

DS(on)

d R

e malis

r No

1.6

1.4

1.2

1.0

0.8

0.6

-40

-20 0 20 40 60 80

e R

rc

u

o

S

-

ain

Dr

Ga

t

e

T

h

r

e

Tj-Junction Temperature (°C)

Normalised R

DS(on)

and V

3-433

R

tance

s

i

s

e

s

h

o

ld

V

o

l

t

120

100 140 160

GS(th)

v Temperature

VGS=-10V

ID=-150mA

)

n

S(o

D

VGS=VDS

ID=-1mA

ag

e

V

GS

(

T

H

)

180

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