Diodes ZVP3306F User Manual
D
SOT23 P-CHANNEL ENHANCEMENT
ZVP3306F
G
MODE VERTICAL DMOS FET
ISSUE 3 JANUARY 1996
FEATURES
*60 Volt V
*R
PARTMARKING DETAIL ML
COMPLEMENTARY TYPE ZVN3306F
DS(on)
DS
=14Ω
S
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Continuous Drain Current at T
=25°C I
amb
Pulsed Drain Current I
Gate Source Voltage V
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
DS
D
DM
GS
tot
j:Tstg
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source
BV
Breakdown Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage I
Zero Gate Voltage Drain
Current
On-State Drain Current(1) I
Static Drain-Source On-State
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2) C
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance (2) C
Turn-On Delay Time (2)(3) t
Rise Time (2)(3) t
Turn-Off Delay Time (2)(3) t
Fall Time (2)(3) t
V
GS(th)
GSS
I
DSS
D(on)
R
DS(on)
g
fs
iss
C
oss
rss
d(on)
r
d(off)
f
(1) Measured under pulsed conditions. Width=300
(3) Switching times measured with 50
Spice parameter data is available upon request for this device
Ω source impedance and <5ns rise time on a pulse generator
-60 V ID=-1mA, VGS=0V
DSS
-1.5 -3.5 V ID=-1mA, VDS= V
20 nA
-0.5
µA
-50
µA
-400 mA VDS=-18 V, VGS=-10V
14
Ω
60 mS VDS=-18V, ID=-200mA
50 pF
25 pF VDS=-18V, VGS=0V, f=1MHz
8pF
8ns
8ns
8ns
8ns
µs. Duty cycle ≤2% (2) Sample test.
3 -4343 - 435
-60 V
-90 mA
-1.6 A
± 20
330 mW
-55 to +150 °C
GS
=± 20V, V
V
GS
V
=-60 V, VGS=0V
DS
=-48 V, VGS=0V, T=125°C(2)
V
DS
DS
=0V
VGS=-10V, ID=-200mA
V
DD
≈-18V, I
=-200mA
D
V
D
ZVP3306F
TYPICAL CHARACTERISTICS
G
ZVP3306F
-10
-8
-6
-4
-2
0
V Drain Source
0-2 -4 -6 -8-10
V
GS-
Gate Source Voltage
(Volts)
Voltage Saturation Characteristics
60
GS=
Note :V
f=1MHz
0V
C
iss
oss
C
rss
C
50
40
30
acitance (pF)
20
C-Cap
10
0
0 -10 -20 -30 -40 -50 -60 -70
VDS-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
D=
I
-400mA
-200mA
-100mA
-1.0
-0.8
ps)
m
-0.6
ent (A
urr
-0.4
C
n
ai
-0.2
Dr
I
0
0-2 -4 -6 -8 -10
VDS- Drain Source
Voltage (Volts)
Saturation Characteristics
2
ts)
1
ol
V
0
e (
-2
tag
-4
ol
-6
-8
-10
Source V
-12
ate
G
-14
-
S
G
-16
V
00.51.01.5
Note :I
VDS=
-20V
D=-
0.2A
-40V -60V
Q-Gate Charge (nC)
Gate charge v gate-source voltage
VGS=
-16V
-14V
-12V
-10V
-9V
-8V
-7V
-6V
-5V
-4.5V
Ω
100
10
1
-10
RDS(on)-Drain Source On Resistance
VGS=-5V
I
D-
Drain Current (mA)
-6V
-7V
-10V
-15V
-20V
-100 -1000
On-resistance vs Drain Current
2.6
2.0
d V
an
sed R
i
1.0
0.6
Normal
-40
-20 0 20 40 60 80
Normalised R
100 140 160
Junction Temperature (°C)
DS(on)
and V
GS(th)
GS=
V
-10V
ID=0.37A
V
GS=VDS
ID=-1mA
120
180
vs Temperature
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