Diodes ZVP3306A User Manual

P-CHANNEL ENHANCEMENT

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50Ω source

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ZVP3306A

MODE VERTICAL DMOS FET

ISSUE 2  MARCH 94

FEATURES *60 Volt V *R

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Drain-Source Voltage V

Continuous Drain Current at T

Pulsed Drain Current I

Gate Source Voltage V

Power Dissipation at T

Operating and Storage Temperature Range T

DS(on)

DS

=14Ω

=25°C I

amb

=25°C P

amb

DS

D

DM

GS

tot

j:Tstg

D G S

E-Line

TO92 Compatible

-60 V

-160 mA

-1.6 A

± 20

625 mW

-55 to +150 °C

V

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.

Drain-Source Breakdown

BV

Voltage

Gate-Source Threshold Voltage

Gate-Body Leakage I

Zero Gate Voltage Drain Current

On-State Drain Current(1) I

Static Drain-Source On-State Resistance (1)

Forward Transconductance (1)(2)

Input Capacitance (2) C

Common Source Output Capacitance (2)

Reverse Transfer Capacitance (2)

Turn-On Delay Time (2)(3) t

Rise Time (2)(3) t

Turn-Off Delay Time (2)(3) t

Fall Time (2)(3) t

V

GS(th)

GSS

I

DSS

D(on)

R

DS(on)

g

fs

iss

C

oss

C

rss

d(on)

r

d(off)

f

(1) Measured under pulsed conditions. Width=300 (2) Sample test.

-60 V ID=-1mA, VGS=0V

DSS

-1.5 -3.5 V ID=-1mA, VDS= V

20 nA

-0.5

µA

-50

µA

=± 20V, V

V

GS

V

=-60 V, VGS=0

DS

V

=-48 V, VGS=0V, T=125°C(2)

DS

-400 mA VDS=-18 V, VGS=-10V

14

VGS=-10V,ID=-200mA

Ω

60 mS VDS=-18V,ID=-200mA

50 pF

25 pF VDS=-18V, VGS=0V, f=1MHz

8pF

8ns

8ns

8ns

V

DD

8ns

µs. Duty cycle ≤2%

≈-18V, I

3-4293-430

hing times m

with

im

rise time on a pulse gener

GS

=0V

DS

=-200mA

D

( 3 )

r

S

tcgt

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ZVP3306A

ZVP3306A

TYPICAL CHARACTERISTICS

-1.2

V

GS=

-20V

V

GS=

-20V

-1.0

)

-0.8

nt (Amps

-0.6

e

r

r

u

-0.4

C

n

i

a

r

-0.2

D

-

D

I

0

-10

-16V

-14V

-12V

-10V

-9V

-8V

-7V

0 -10 -20 -30 -40 -50

VDS - Drain Source Voltage (Volts)

Output Characteristics

-6V

-5V

-4V

-1.0

-0.8

Amps)

-0.6

t (

n

-0.4

-0.2

- Drain Curre

D

I

0

0-2 -4 -6 -8 -10

VDS - Drain Source Voltage (Volts)

Saturation Characteristics

)

s

-1.0

VGS=

-16V

-14V

-12V

-10V

-9V

-8V

-7V

-6V

-5V

-4.5V

-8

-6

Voltage (Volts)

-4

-2

Drain Source

0

DS-

V

0-2 -4-6-8-10

VGS-Gate Source Voltage (Volts)

Vo ltag e Sa turation Characteristics

(Ω)

100

10

1

-10

RDS(on)-Drain Source On Resistance

On-resistance vs Drain Cur re nt

VGS=-5V

-6V

-100 -1000

ID-Drain Current (mA)

-7V

-10V

I

D=

-

400mA

-200mA

-100mA

-15V

-20V

-0.8

-0.6

Current (Amp ain

r

-0.4

e D

t

-0.2

On-Sta

-

) n

0

O

0-2-4-6-8-10

D(

I

V

DS=-

10V

VGS-Gate Source Voltage (Volts)

Transfer Characteristics

2.6

2.4

S(th) G

2.2

2.0

nd V

a

1.8

1.6

DS(on)

1.4

R

d

1.2

e

s

1.0

ali m

0.8

Nor

0.6

-40

-20 0 20 40 60 80

Normalised R

e R

rc

u

o

S

-

ain

Dr

G

ate

T

h

res

Junction Temperature (°C)

DS(on)

and V

GS(th)

o

S(

D

R

tance

s

i

s

e

h

o

l

d

V

o

l

tag

e

120

100 140 160

vs Temperature

V

GS=

ID=0.37A

)

n

V ID=-1mA

V

GS

-10V

GS=VDS

(

T

H

)

180

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