Diodes ZVP2110G User Manual
SOT223 P-CHANNEL ENHANCEMENT
ZVP2110G
MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94 ✪
FEATURES
* 100 Volt V
*R
DS(on)
DS
=8Ω
D
COMPLEMENTARY TYPE ZVN2110G
PARTMARKING DETAIL ZVP2110
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Continuous Drain Current at T
=25°C I
amb
Pulsed Drain Current I
Gate Source Voltage V
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
DS
D
DM
GS
tot
j:Tstg
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
BV
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage I
Zero Gate Voltage Drain
Current
On-State Drain Current(1) I
Static Drain-Source On-State
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2) C
Common Source Output
Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3) t
Rise Time (2)(3) t
Turn-Off Delay Time (2)(3) t
Fall Time (2)(3) t
(1) Measured under pulsed conditions. Width=300
V
GS(th)
GSS
I
DSS
D(on)
R
DS(on)
g
fs
iss
C
oss
C
rss
d(on)
r
d(off)
f
-100 V ID=-1mA, VGS=0V
DSS
-1.5 -3.5 V ID=-1mA, VDS= V
20 nA
-1
µA
-100
µA
-750 mA VDS=-25 V, VGS=-10V
8
Ω
125 mS VDS=-25V,ID=-375mA
100 pF
35 pF VDS=-25V, VGS=0V, f=1MHz
10 pF
7ns
15 ns
12 ns
15 ns
µs. Duty cycle ≤2% (2) Sample test.
3 - 4293 - 430
-100 V
-310 mA
-3 A
± 20
2W
-55 to +150 °C
GS
=± 20V, V
V
GS
V
=-100 V, VGS=0
DS
V
=-80 V, VGS=0V, T=125°C(2)
DS
DS
=0V
VGS=-10V,ID=-375mA
V
≈-25V, I
DD
=-375mA
D
S
D
V
ZVP2110G
ZVP2110G
TYPICAL CHARACTERISTICS
250
S)
200
m
150
100
sconductance (
an
r
50
T
-
s
f
g
0
0-2 -4 -6-8 -10
VGS-Gate Source Voltage (Volts)
Transconductance v gate-source voltage
80
pF)
60
nce (
ta
40
apaci
-C
20
C
0
0-20-40-60
VDS-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
DS=
V
-10V
-80 -100
VGS=
-1.6
-1.4
ps)
m
-1.2
-1.0
ent (A
-0.8
n Curr
-0.6
ai
Dr
-0.4
-
-0.2
I
0
0-2 -4-6-8-10
VDS- Drain Source
Vol tage (Volts)
-20V
-16V
-5V
-4.5V
-4V
-3.5V
-12V
-10V
-9V
-8V
-7V
-6V
Saturation Characteristics
0
ts)
-2
ol
V
-4
e (
tag
ol
-10
Source V
-12
ate
-14
G
-
S
-16
G
V
-6
-8
iss
C
oss
C
rss
C
VDS=
-50V
-25V
0 0.5 1.0 1.5
-100V
D=-
I
0.5A
2.0 2.5 3.0
Q-Gate Charge (nC)
Gate charge v gate-source voltage
Ω
100
VGS=-4V
10
1
10
R -Drain Source On Resistance
ID-Drain Current (mA)
On-resistance v drain current
-5V
-7V
-10V
-20V
100 1000
2.6
2.4
2.2
2.0
and V
1.8
1.6
1.4
R
1.2
sed
i
1.0
al
m
0.8
or
0.6
N
-40
Normalised R
-20 0 20 40 60 80
Junction Temperature (°C)
DS(on)
and V
GS(th)
GS=
V
-10V
ID=-0.375A
GS=VDS
V
ID=-1mA
120
100 140 160
180
vs Temperature
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