Diodes ZVP2106G User Manual
60V P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Product Summary
V
R
(BR)DSS
-60V
5 @ V
DS(on)
GS
= -10V
T
Description
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
Applications
• Load Switch
• DC-DC Converters
ADVANCE INFORMATION
Top View
I
D
= +25°C
A
-450mA
SOT223
ZVP2106G
Features and Benefits
• Low On-Resistance
• Fast Switching Speed
• Lead-Free Finish; RoHS compliant (Note 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT223
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish
• Weight: 0.112 grams (approximate)
S
D
Top view
Pin Out
D
IN
Ordering Information (Note 4)
Product Case Quantity per reel
ZVP2106GTA SOT223 1,000
Note: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
ZVP2106
ZVP2106 = Product type Marking Code
ZVP2106G
Document number: DS33393 Rev. 4 - 2
1 of 6
www.diodes.com
April 2014
© Diodes Incorporated
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current
Pulsed Drain Current
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Power Dissipation P
Storage Temperature Range T
2 W
TOT
-55 to +150
STG
Electrical Characteristics (@T
ADVANCE INFORMATION
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
Static Characteristics
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 5)
Static Drain-Source On-State Resistance (Note 5)
Forward Transconductance (Note 5 & 6)
BV
V
GS(th)
I
I
I
D(on)
R
DS(on)
DSS
GSS
DSS
g
fS
-60
-1.5
—
— —
-1
—
150
Dynamic Characteristics (Note 6)
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time (Note 7)
Rise Time (Note 7)
Turn-Off Delay Time (Note 7)
Fall Time (Note 7)
Notes: 5. Measured under pulsed conditions. Width=300µs. Duty cycle ≦ 2%.
6. Sample test.
7. Switching times measured with 50 source impedance and <5ns rise time on a pulse generator.
C
C
C
t
d(on)
t
d(off)
oss
t
f
iss
rss
r
f
— —
— —
— —
— —
— —
— —
— —
ZVP2106G
V
DS
V
GS
I
D
I
DM
—
—
—
— V
-3.5 V
20 nA
-0.5 µA
-100 µA
—
—
—
— A
5
— mS
100
60
20
7
5
12
15
-60 V
±20
V
-450 M A
-4 A
°C
ID = -1mA, VGS = 0V
ID = -1mA, VDS = VGS
VGS = ±20V, VDS = 0V
= -60V, VGS = 0V
V
DS
V
= -48V, VGS = 0V,
DS
T= +125°C (Note 6)
VDS = -18V, VGS = -10V
Ω
VGS = -10V, ID = -500mA
VDS = -18V, ID = -500mA
pF
ns
= -18V, VGS = 0V, f=1MHz
V
DS
= -18V, ID = -500mA
V
DD
ZVP2106G
Document number: DS33393 Rev. 4 - 2
2 of 6
www.diodes.com
April 2014
© Diodes Incorporated
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