Diodes ZVP2106A User Manual

P-CHANNEL ENHANCEMENT

Switc

easured

source

pedance and <5ns

ato

E-Line

TO92 Compatible

D
G
S

MODE VERTICAL DMOS FET

ISSUE 2 – MARCH 94

FEATURES
* 60 Volt V
*R

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Continuous Drain Curren t at T
Pulsed Drain Current I
Gate Source Voltage V
Power Dissipation at T
Operating and Storage Temperature Range T

DS(on)

=5Ω

DS

=25°C I

amb

=25°C P

amb

DS
D
DM

GS

tot

j:Tstg

ZVP2106A

-60 V

-280 mA

-4 A

± 20

700 mW

-55 to +150 °C

V

ELECTRICAL CHARACTERI STIC S (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown

Voltage
Gate-Source Threshold

Voltage
Gate-Body Leakage I
Zero Gate Voltage Drain

Current
On-State Drain Current(1) I
Static Drain-Source On-State

Resistance (1)
Forward Transconductance

(1)(2)
Input Capacitance (2) C
Common Source Output

Capacitance (2)
Reverse Transfer

Capacitance (2)
Turn-On Delay Time (2)(3) t
Rise Time (2)(3) t
Turn-Off Delay Time (2)(3) t
Fall Time (2)(3) t

BV

V

GS(th)

GSS

I

DSS

D(on)

R

DS(on)

g

fs

iss

C

oss

C

rss

d(on)
r
d(off)
f

-60 V ID=-1mA, VGS=0V

DSS

-1.5 -3.5 V ID=-1mA, VDS= V

20 nA

-0.5

-100

V
VDS=-60 V, VGS=0

µA

V

µA

GS

DS

-1 A VDS=-18 V, VGS=-10V
5

VGS=-10V,ID=-500mA

Ω

150 mS VDS=-18V,ID=-500mA

100 pF
60 pF VDS=-18V, VGS=0V, f=1MHz

20 pF

7ns
15 ns
12 ns

V

DD

15 ns

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.

hing times m

with 50Ω

3-417

im

rise time on a pulse gener

GS

=± 20V, VDS=0V

=-48 V, VGS=0V, T=125°C(2)

≈-18V, ID=-500mA

r

(
3
)

S

tcgt

es

easu

edt50

sou

ce

pedacead5sseteoapusegee

ato

E-Line

TO92 Compatible

D
G
S

ZVP2106A

TYPICAL CHARACTERISTICS

ps)
Am

t (

n

e

r

Cur
ain

Dr
te

Sta

On-

-

)
n
O

D(

I

-3.5

-3.0

-2.5

-2.0

-1.5

-1.0

-0.5
0

VGS=

-20V

-18V

-14V

-12V

-10V

-9V

-8V

-7V

VDS - Drain Source Volta ge (Volts)

Output Characteristics

-10

-8

-6

Voltage (Volts)

-4

-2

Drain Source

0

DS-

V

0-2 -4 -6 -8 -10

VGS-Gate Source Voltage (Volts)

Vo ltag e Sa turation Characteristics

-6V

-5V

-4V

ID=

-1A

-0.5A

-0.25A

-2.0

-1.8

-1.6

-1.4

-1.2

-1.0

-0.8

-0.6

-0.4

-0.2

-On-State Drain Current (Amps)

0

)
n

0-2-4-6-8-100 -10 -20 -30 -40 -50

D(O

I

VDS - Drain Source Voltage (Volts)

Saturation Characteristics

-1.6

-1.4

-1.2

-1.0

-0.8

-0.6

-0.4

-0.2

On-State Drain Current (Amps)

-

)
n
O

D(

0 -2 -4 -6 -8 -10

I

VDS=-10V

VGS-Gate Source Voltage (Volts)

Transfer Characteristics

VGS=

-10V

-9V

-8V

-7V

-6V

-5V

-4V

-3.5V

(Ω)

10

5

VGS=-5V

-Drain Source Resistance

1

DS(ON)

-0.1 -1.0

R

ID-Drain Current

On-resistance v drain current

-6V

-7V

(Amps)

-8V

-10V -9V

-2.0

2.6

2.4

(th)

S

2.2

G

V

2.0

nd

a

1.8

n)
o

1.6

(
S
D

1.4

1.2

1.0

0.8

Normalised R

0.6

-40

Dr

-20 0 20 40 60 80

Tj-Junction Temperature (°C)

Normalised R

DS(on)

3-418

-

ain

G

ate

and V

u

o

S

e

e R

rc

T

h

res

GS(th)

)

n

o

DS(

R

e

c

n

ta

VGS=-10V

s

i

s

h

o

l

d

V

o

l

t

ag

e

120

100 140 160

vs Temperature

ID=-0.5A

VGS=VDS

ID=-1mA

V

GS

(

t

h)

180