Diodes ZVP0545G User Manual
SOT223 P-CHANNEL ENHANCEMENT
G
MODE VERTICAL DMOS FET
ISSUE 1 – MARCH 98
FEATURES
* 450 Volt V
*R
DS(on)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Continuous Drain Current at T
Pulsed Drain Current I
Gate Source Voltage V
Power Dissipation at T
Operating and Storage Temperature Range T
DS
=150Ω
=25°C I
amb
=25°C P
amb
DS
D
DM
GS
tot
j:Tstg
ZVP0545G
D
-450 V
-75 mA
-400 mA
± 20
2W
-55 to +150 °C
S
D
V
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage I
Zero Gate Voltage Drain
Current
On-State Drain Current(1) I
Static Drain-Source
On-State Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2) C
Common Source Output
Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3) t
Rise Time (2)(3) t
Turn-Off Delay Time (2)(3) t
Fall Time (2)(3) t
BV
V
GS(th)
GSS
I
DSS
D(on)
R
DS(on)
g
fs
iss
C
oss
C
rss
d(on)
r
d(off)
f
-450 V ID=-1mA, VGS=0V
DSS
-1.5 -4.5 V ID=-1mA, VDS= V
20 nA
-20
-2
V
GS
VDS=-450 V, VGS=0
µA
V
mA
DS
T=125°C
-100 mA VDS=-25 V, VGS=-10V
150
VGS=-10V,ID=-50mA
Ω
40 mS VDS=-25V,ID=-50mA
120 pF
20 pF VDS=-25 V, VGS=0V, f=1MHz
5pF
10 ns
15 ns
15 ns
V
DD
20 ns
GS
=± 20V, VDS=0V
=-360 V, VGS=0V,
(2)
≈-25V, ID=-50mA
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
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