Diodes ZVP0545A User Manual

P-CHANNEL ENHANCEMENT

ZVP0545A

MODE VERTICAL DMOS FET

ISSUE 2  MARCH 94

FEATURES * 450 Volt V *R

DS(on)

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Drain-Source Voltage V

Continuous Drain Current at T

Pulsed Drain Current I

Gate Source Voltage V

Power Dissipation at T

Operating and Storage Temperature Range T

DS

=150Ω

=25°C I

amb

=25°C P

amb

DS

D

DM

GS

tot

j:Tstg

D G S

E-Line

TO92 Compatible

-450 V

-45 mA

-400 mA

± 20

700 mW

-55 to +150 °C

V

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.

Drain-Source Breakdown

BV

Voltage

Gate-Source Threshold Voltage

Gate-Body Leakage I

Zero Gate Voltage Drain Current

On-State Drain Current(1) I

Static Drain-Source On-State Resistance (1)

Forward Transconductance (1)(2)

Input Capacitance (2) C

Common Source Output Capacitance (2)

Reverse Transfer Capacitance (2)

Turn-On Delay Time (2)(3) t

Rise Time (2)(3) t

Turn-Off Delay Time (2)(3) t

Fall Time (2)(3) t

(1) Measured under pulsed conditions. Width=300 (2) Sample test.

V

GS(th)

GSS

I

DSS

D(on)

R

DS(on)

g

fs

iss

C

oss

C

rss

d(on)

r

d(off)

f

-450 V ID=-1mA, VGS=0V

DSS

-1.5 -4.5 V ID=-1mA, VDS= V

20 nA

-20

-2

µA

mA

V

GS

V

DS

V

DS

T=125°C

-100 mA VDS=-25 V, VGS=-10V

150

VGS=-10V,ID=-50mA

Ω

40 mS VDS=-25V,ID=-50mA

120 pF

20 pF VDS=-25 V, VGS=0V, f=1MHz

5pF

10 ns

15 ns

15 ns

V

DD

20 ns

µs. Duty cycle ≤2%

=± 20V, V

=-450 V, VGS=0 =-360 V, VGS=0V,

(2)

≈-25V, I

3-413

GS

=0V

DS

=-50mA

D

( 3

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