Diodes ZVNL120G User Manual

SOT223 N-CHANNEL ENHANCEMENT MODE
LOW THRESHOLD VERTICAL DMOS FET

ISSUE 2 - JANUARY 1996 ✪

FEATURES
*V

- 200V

DS
DS(ON)

- 10Ω

=25°C I

amb

=25°C P

amb

BV

DSS

GS(th)

GSS

I

DSS

D(on)

R

DS(on)

fs
iss

C

oss

rss
d(on)
r
d(off)
f

DS
D
DM

GS

tot

j:Tstg

= 25°C unless otherwise stated).

amb

200 V ID=1mA, VGS=0V

0.5 1.5 V ID=1mA, VDS= V
100 nA
10

µA

100

µA

500 mA VDS=25V, VGS=5V

10

Ω

10

Ω

200 mS VDS=25V, ID=250mA

85 pF
20 pF VDS=25V, VGS=0V, f=1MHz

7pF
8ns
8ns
20 ns
12 ns

*R

PARTMARKING DETAIL - ZVNL120

ABSOLUTE MAXIMUM RATINGS.

PA RAM ETE R SY MBO L VALUE UNIT
Drain-Source Voltage V
Continuous Drain Current at T
Pulsed Drain Current I
Gate-Source Voltage V
Power Dissipation at T
Operating and Storage Temperature Range T

ELECTRICAL CHARACTER ISTI CS (at T

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown

Voltage
Gate-Source Threshold Volt age V
Gate-Body Leakage I
Zero Gate Voltage D rain

Current

On-State Drain Current(1) I
Static Drain-Source On-State

Resistance (1)
Forward Transconductance(1)(2) g
Input Capacitance (2) C
Common Source Output

Capacitance (2)
Reverse Transfer Capacitance (2) C
Turn-On Delay Time (2)(3) t
Rise Time (2)(3) t
Turn-Off Delay Time (2)(3) t
Fall Time (2)(3) t

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator

ZVNL120G

D

G

200 V
320 mA

2A

± 20

2W

-55 to +150 °C

V

=± 20V, VDS=0V

GS

VDS=200V, VGS=0V
V

=160V, VGS=0V,

DS

T=125°C

V
V

V

(2)

=5V, ID=250mA

GS

=3V, ID=125mA

GS

≈25V, ID=250mA

DD

V

GS

D

S

3 - 420

TYPICAL CHARACTERISTICS

1.6

)

s

1.4

1.2

t (Amp
en

1.0

r

r

u

0.8

C

n

i

a

0.6

Dr

)

0.4

n
O

D(

0.2

I

0

0 5 10 15 20 25 30 35 40 45 50

VDS - Drain Source Voltage (Volts)

Output Characteristics

1.6

)

1.4

1.2

Amps

1.0

nt (

e

r

r

0.8

u
C

n

0.6

i

a
Dr

0.4

)
n
O

0.2

D(

I

0

012345678910

GS-

V

Gate Source

Voltage (Volts)

Transfer Characteristics

VGS=

10V

8V
6V

5V

3V
2V

4V

VDS=
40V

20V

10V

1.0

0.8

0.6

0.4

Drain Current (Amps)

)

0.2

n
O

D(

I

0

0246810

VDS - Drain Source Voltage (Volts)

Saturation Characteristics

500

400

300

200

100

ransconductance (mS)

-T

fs

g

0

12345678910

VDS=25V

VGS-Gate Source Voltage (Volts)

Transconductance v gate-source voltage

VGS=
10V

8V
6V

4V

3V

2V

500

)

400

mS
(

e

c

n

ducta

n

o
sc
an

r

T

-

fs

g

300

200

100

0

VDS=25V

0.4

0.2

0

0.6 0.8 1.0

1.2

ID- Drain Current (Amps)

Transconductance v drain current

1.4

1.6 1.8 2.0

100

)

80

F

p
(

e

60

c

n

ita

c
Capa

C-

40

20

0

10 20

30

40 50

Ciss

Coss

Crss

VDS-Drain Source Voltage (Volts)

Capacitance v drain-source voltage

3 - 421 3 - 422