Diodes ZVNL110G User Manual
SOT223 N-CHANNEL ENHANCEMENT MODE
LOW THRESHOLD VERTICAL DMOS FET
ISSUE 2 - FEBRUARY 1996 ✪
FEATURES
* LOW R
DS(ON)
- 3Ω
ZVNL110G
D
PARTMARKING DETAIL - ZVNL110
D
G
ABSOLUTE MAXIMUM RATINGS.
PA RAM ETE R SY MBO L VALUE UNIT
Drain-Source Voltage V
Continuous Drain Current at T
=25°C I
amb
Pulsed Drain Current I
Gate-Source Voltage V
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTER ISTI CS (at T
DS
D
DM
GS
tot
j:Tstg
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
Gate-Source Threshold Volt age V
Gate-Body Leakage I
Zero Gate Voltage D rain
Current
On-State Drain Current(1) I
Static Drain-Source On-State
Resistance (1)
Forward Transconductance(1)(2) g
Input Capacitance (2) C
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance (2) C
Turn-On Delay Time (2)(3) t
Rise Time (2)(3) t
Turn-Off Delay Time (2)(3) t
Fall Time (2)(3) t
BV
GS(th)
GSS
I
DSS
D(on)
R
DS(on)
fs
iss
C
oss
rss
d(on)
r
d(off)
f
100 V ID=1mA, VGS=0V
DSS
0.75 1.5 V ID=1mA, VDS= V
100 nA
10
µA
100
µA
750 mA VDS=25V, VGS=5V
4.5
Ω
3.0
Ω
225 mS VDS=25V, ID=500mA
75 pF
25 pF VDS=25V, VGS=0V, f=1MHz
8pF
7ns
12 ns
15 ns
13 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
100 V
600 mA
6A
± 20
V
2W
-55 to +150 °C
GS
V
=± 20V, VDS=0V
GS
VDS=100V, VGS=0V
V
=80V, VGS=0V, T=125°C(2)
DS
VGS=5V, ID=250mA
V
=10V, ID=500mA
GS
V
≈25V, ID=1A, VGS =10V
DD
S
3 - 419
Loading...