Diodes ZVNL110A User Manual
N-CHANNEL ENHANCEMENT
D
G
S
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 100 Volt V
*R
DS(on)
* Low threshold voltage
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Continuous Drain Curren t at T
Pulsed Drain Current I
Gate Source Voltage V
Power Dissipation at T
Operating and Storage Temperature Range T
=3Ω
DS
=25°C I
amb
=25°C P
amb
DS
D
DM
GS
tot
j:Tstg
ZVNL110A
E-Line
TO92 Compatible
100 V
320 mA
6A
± 20
700 mW
-55 to +150 °C
V
ELECTRICAL CHARACTERI STIC S (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage I
Zero Gate Voltage Drain
Current
On-State Drain Current(1) I
Static Drain-Source On-State
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2) C
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance
(2)
Turn-On Delay Time (2)(3) t
Rise Time (2)(3) t
Turn-Off Delay Time (2)(3) t
Fall Time (2)(3) t
BV
V
GS(th)
GSS
I
DSS
D(on)
R
DS(on)
g
fs
iss
C
oss
C
rss
d(on)
r
d(off)
f
100 V ID=1mA, VGS=0V
DSS
0.75 1.5 V ID=1mA, VDS= V
100 nA
10
500
V
GS
VDS=100 V, VGS=0
µA
V
µA
(2)
DS
750 mA VDS=25 V, VGS=5V
4.5
3.0
VGS=5V,ID=250mA
Ω
V
Ω
GS
225 mS VDS=25V,ID=500mA
75 pF
25 pF VDS=25 V, VGS=0V, f=1MHz
8pF
7ns
12 ns
V
DD
15 ns
13 ns
3-400
GS
=± 20V, VDS=0V
=80 V, VGS=0V, T=125°C
=10V, ID=500mA
≈25V, VGS=10V, ID=1A
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