Diodes ZVN4424G User Manual
TNEMECNAHNE LENNAHC-N 322TOS
TEF SOMD LACITREV EDOM
G4244NVZ
5991 REBOTCO - 4 EUSSI
SERUTAEF
VB tloV 042*
SD
R wol ylemertxE*
3.4= Ω
)no(SD
D
gnihctiws tsaF dna dlohserht woL*
SNOITACILPPA
sehctiws gnillaid dna llacer htraE*
sehctiws kooh cinortcelE*
tnempiuqe derewop yrettaB*
G
S
D
srotrevnoc cd-cd egatlov hgih dna smoceleT*
4244NVZ- SLIATED GNIKRAMTRAP
G4244PVZ- EPYT YRATNEMELPMOC
.SGNITAR MUMIXAM ETULOSBA
TINUEULAVLOBMYSRETEMARAP
VegatloV ecruoS-niarD
SD
V042
T ta tnerruC niarD suounitnoC
bma
T ta noitapissiD rewoP
bma
IC°52=
D
ItnerruC niarD desluP
MD
V egatloV ecruoS etaG
SG
PC°52=
tot
T:
TegnaR erutarepmeT egarotS dna gnitarepO
j
gts
± 04
Am005
A5.1
V
W5.2
C°051+ ot 55-
514 - 3
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage I
On State Drain-Current I
Zero Gate Voltage Drain
Current
Static Drain-Source
On-State Resistance
Forward
Transconductance (1) (2)
Input Capacitance (2) C
Common Source Output
Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3) t
Rise Time (2)(3) t
Turn-Off Delay Time (2)(3) t
Fall Time (2)(3) t
BV
V
GSS
D(on)
I
DSS
R
g
C
C
d(on)
r
d(off)
f
DSS
GS(th)
DS(on)
fs
iss
oss
rss
240 V ID=1mA, VGS=0V
0.8 1.3 1.8 V ID=1mA, VDS= V
100 nA
V
=± 40V, VDS=0V
GS
GS
0.8 1.4 A VDS=10V, VGS=10V
4
4.3
10
100
5.5
6
VDS=240 V, VGS=0V
µA
V
µA
Ω
Ω
DS
VGS=10V,ID=500mA*
V
GS
=190 V, VGS=0V, T=125°C
=2.5V,ID=100mA*
0.4 0.75 S VDS=10V,ID=0.5A
110 200 pF
15 25 pF
V
=25V, VGS=0V, f=1MHz
DS
3.5 15 pF
2.5 5 ns
58ns
V
≈50V, ID =0.25A, V
DD
40 60 ns
16 25 ns
GEN
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
=10V
3 - 416 3 - 415
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