Diodes ZVN4310G User Manual
A
f
Product Line o
Diodes Incorporated
Green
ZVN4310G
100V N-CHANNEL ENHANCEMENT MODE VERTICAL MOSFET IN SOT223
Features and Benefits
• V
• R
• Maximum continuous drain current I
• “Green” component, Lead Free Finish / RoHS compliant
• Qualified to AEC-Q101 Standards for High Reliability
> 100V
(BR)DSS
≤ 0.54Ω @ VGS = 10V
DS(on)
(Note 1)
= 1.67A
D
Mechanical Data
• Case: SOT223
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish
• Weight: 0.112 grams (approximate
Applications
• DC-DC Converters
• Solenoids / Relay Driver for Automotive
SOT223
Top View
Pin Out - Top
D
G
S
Equivalent Circuit
Ordering Information (Note 1)
Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel
ZVN4310GTA ZVN4310 7 8 1,000
Notes: 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds. All applicable RoHS
exemptions applied. Further information about Diodes Inc.’s “Green” Policy can be found on our website at https:// www.diodes.com
Marking Information
ZVN4310 = Product Type Marking Code
ZVN4310G
Document number: DS33372 Rev. 4 - 2
1 of 5
www.diodes.com
January 2012
© Diodes Incorporated
A
f
)
)
)
r
)
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 3)
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Power Dissipation (Note 2)
Thermal Resistance, Junction to Ambient (Note 2)
Thermal Resistance, Junction to Leads (Note 4)
Operating and Storage Temperature Range
Product Line o
Diodes Incorporated
ZVN4310G
V
DSS
V
GSS
I
D
I
DM
P
D
R
θJA
R
θJL
T
, T
J
STG
100 V
±20 V
1.67 A
12 A
3 W
41.7 °C/W
8.84 °C/W
-55 to +150 °C
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage
On-State Drain Current
BV
I
I
D(on
DSS
DSS
GSS
100 - - V
- -
- - ±20 nA
9 - - A
10
100
VGS = 0V, ID = 1mA
V
µA
µA
= 100V, VGS = 0V
DS
V
= 80V, VGS = 0V, TA = 125°C
DS
VGS = ±20V, VDS = 0V
VGS = 10V, VDS = 10V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
V
R
DS (on)
GS(th
g
fs
1 - 3 V
0.5
0.4
-
0.54
0.75
0.6 - - S
VDS = VGS, ID = 1mA
V
= 10V, ID = 3.3A
GS
Ω
= 5V, ID = 1.5A
V
GS
VDS = 10V, ID = 3.3A
DYNAMIC CHARACTERISTICS (Note 5)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 2. For a device mounted on 50mm X 50mm X 1.6mm FR-4 PCB with high coverage of single sided 2oz copper, in still air condition.
3. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
4. Thermal resistance from junction to solder-point (at the end of the drain lead).
5. Short duration pulse test used to minimize self-heating effect.
C
C
C
t
D(on
t
D(off
iss
oss
rss
t
t
f
- - 350
- - 140
- - 20
- - 8
- - 25
- - 30
- - 16
pF
pF
pF
ns
ns
ns
ns
= 25V, V
V
DS
f = 1.0MHz
= 25V, ID = 3A, V
V
DD
R
= 50Ω
GS
= 0V,
GS
GEN
= 10V,
ZVN4310G
Document number: DS33372 Rev. 4 - 2
2 of 5
www.diodes.com
January 2012
© Diodes Incorporated
Loading...