Page 1
N-CHANNEL ENHANCEMENT
D
G
S
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 100 Volt V
*R
DS(on)
* Spice model available
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Continuous Drain Curren t at T
Practical Continuous Drain Current at
T
=25°C
amb
Pulsed Drain Current I
Gate Source Voltage V
Power Dissipation at T
Practical Power Dissipation at T
Operating and Storage Temperature Range T
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B.
with copper equal to 1 inch square minimum
DS
= 0.5Ω
=25°C I
amb
=25°C P
amb
=25°C* P
amb
D
I
DP
DM
DS
GS
tot
totp
j:Tstg
ZVN4310A
E-Line
TO92 Compatible
100 V
0.9 A
1A
12 A
± 20
850 mW
1.13 W
-55 to +150 °C
V
ELECTRICAL CHARACTERI STIC S (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
Gate-Source
Threshold Voltage
Gate-Body Leakage I
Zero Gate Voltage
Drain Current
On-State Drain
Current(1)
Static Drain-Source
On-State Resistance
(1)
Forward
Transconductance
BV
V
GS(th)
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
100 V ID=1mA, VGS=0V
DSS
1 3 V ID=1mA, VDS= V
20 nA
10
100
9AV
0.36
0.5
0.48
0.65
V
GS
VDS=100V, VGS=0
µA
V
µA
Ω
Ω
DS
DS
VGS=10V,ID=3A
V
GS
600 mS VDS=25V,ID=3A
(1)(2)
3-393
GS
=± 20V, VDS=0V
=80V, VGS=0V, T=125°C(2)
=25 V, VGS=10V
=5V, ID=1.5A
Page 2
D
G
S
ZVN4310A
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS .
Input Capacitance (2) C
Common Source
Output Capacitance
iss
C
oss
350 pF
140 pF VDS=25 V, VGS=0V, f=1MHz
(2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time
(2)(3)
Rise Time (2)(3) t
Turn-Off Delay Time
(2)(3)
Fall Time (2)(3) t
C
t
d(on)
r
t
d(off)
f
rss
30 pF
8ns
25 ns
30 ns
16 ns
V
DD
R
GS
≈25V, V
=50Ω
=10V, ID=3A
GEN
(1) Measured under pulsed conditions. Width=300µs. D uty cycle ≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
THERMAL CHARACTERISTICS
PARAMETER SYMBOL MAX. UNIT
Thermal Resistance:Junction to Ambient
Junction to Case
1.0
atts)
0.75
- (W
0.50
0.25
Max Power Dissipation
-40
-20 0 20
Am
bie
nt t
e
mpe
40 60 80 100 120 200180160140
T -Temperature (°C)
r
atur
e
R
th(j-amb)
R
th(j-case)
0.0001
t
1
0.001
D.C.
D=t
1/tP
t
P
D=0.6
D=0.2
D=0.1
D=0.05
Single Pulse
150
100
50
Thermal Resistance (°C/W)
0
Pulse Width (seconds)
150
50
°C/W
°C/W
10 10010.10.01
Derating curve
Maximum transient thermal impedance
3-394
Page 3
TYPICAL CHARACTERISTICS
ZVN4310A
VGS=
10V
20V
8V9V
10
)
9
8
7
nt (Amps
6
e
r
r
5
u
C
4
n
i
a
r
3
D
2
-
D
1
I
0
012345678910
12V
VDS - Drain Source Voltage (Volts)
Saturation Characteristics
2.6
2.4
2.2
GS(th)
2.0
d V
n
1.8
a
n)
o
1.6
DS(
1.4
d R
1.2
e
1.0
0.8
0.6
Normalis
-50
-25 0 25 50 75
Normalised R
a
Dr
Tj-Junction Temperature (°C)
DS(on)
ourc
S
n-
i
G
ate
and V
e R
T
s
i
s
e
h
resh
100
GS(th)
tan
o
125 175 200
7V
)
n
o
S(
D
VGS=10V
R
e
c
ID=3.3A
VGS=VDS
ID=1mA
l
d
V
o
l
t
a
g
e
V
GS
150
v Temperature
10
(Ω)
6V
5V
4V
3V
1.0
0.1
0.1
RDS(on)-Drain Source On Resistance
ID-Drain Current (Amps)
4V
1
10V
6V VGS=3V 8V
5V
10
100
On-resistance v drain current
5
4
S)
(
e
c
n
3
ducta
2
n
o
sc
1
an
r
T
(
TH
)
225
-
fs
0
g
2
0
6810
4
VDS=10V
121416 18 20
ID(on)- Drain Current (Amps)
Transconductance v drain current
500
400
300
200
100
C-Capacitance (pF)
0
0
20 30 40 50
10
VDS-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
Ciss
Coss
Crss
3-395
16
14
olts)
oltage (V
V
urce
-Gate So
S
G
V
ID=3A
12
10
8
6
4
2
0
0
123456789101112
Q-Charge (nC)
Gate charge v gate-source voltage
VDD=
10V
20V
50V
100V
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