Diodes ZVN4306GV User Manual

SOT223 N-CHANNEL ENHANCEMENT

G

MODE VERTICAL DMOS FET

ISSUE 1 - APRIL 1998

FEATURES
*BV
*R
* Repetitive Avalanche Rating
APPLICATIONS
* DC - DC Converters
* Solenoids/Relay Drivers for Automotive
* Stepper Motor Drivers

PARTMARKING DETAIL - ZVN4306V

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Continuous Drain Current at T
Pulsed Drain Current I
Gate Source Voltage V
Power Dissipation at T
Avalanche Current-Repetitive I
Avalanche Energy-Repetitive E
Operating and Storage Temperature Range T

DSS

DS(ON)

=60V

= 0.33Ω

=25°C I

amb

=25°C P

amb

DS

D

DM

GS

tot

AR

AR

j:Tstg

ZVN4306GV

D

60 V

2.1 A
15 A

± 20

3W
1A

25 mJ

-55 to +150 °C

S

D

V

ZVN4306GV

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Drain-Source
Breakdown Voltage

Gate-Source
Threshold Voltage

Gate-Body Leakage I

Zero Gate Voltage
Drain Current

On-State Drain
Current(1)

Static Drain-Source
On-State Resistance
(1)

Forward
Transconductance (1)

Input Capacitance (2) C

Common Source
Output Capacitance

BV

V

GS(th)

GSS

I

DSS

I

D(on)

R

DS(on)

g

fs

iss

C

oss

60 V ID=1mA, VGS=0V

DSS

1.3 3 V ID=1mA, VDS= V

20 nA

10
100

V

VDS=60V, VGS=0V

µA

V

µA

12 A VDS=10V, VGS=10V

0.22

0.32

0.33

0.45

VGS=10V, ID=3A

Ω

V

Ω

0.7 S VDS=25V,ID=3A

350 pF

140pFVDS=25 V, VGS=0V, f=1MHz

GS

=± 20V, VDS=0V

GS

=48V, VGS=0V, T=125°C(2)

DS

=5V, ID=1.5A

GS

(2)

Reverse Transfer
Capacitance (2)

Turn-On Delay Time
(2)(3)

Rise Time (2)(3) t

Turn-Off Delay Time
(2)(3)

Fall Time (2)(3) t

C

rss

t

d(on)

r

t

d(off)

f

30 pF

8ns

25 ns

V

30 ns

16 ns

≈25V, V

DD

=10V, ID=3A

GEN

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator

Spice parameter data is available upon request for this device