Diodes ZVN4306G User Manual
SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 - OCTOBER 1995
FEATURES
* Very low R
APPLICATIONS
* DC - DC Converters
* Solenoids/Relay Drivers for Automotive
PARTMARKING DETAIL - ZVN4306
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Continuous Drain Current at T
Pulsed Drain Current I
Gate Source Voltage V
Power Dissipation at T
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERI STIC S (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage I
Zero Gate Voltage
Drain Current
On-State Drain
Current(1)
Static Drain-Source
On-State Resistance (1)
Forward
Transconductance (1)
Input Capacitance (2) C
Common Source
Output Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time
(2)(3)
Rise Time (2)(3) t
Turn-Off Delay Time
(2)(3)
Fall Time (2)(3) t
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
DS(ON)
= .33Ω
=25°C I
amb
=25°C P
amb
BV
V
GS(th)
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
iss
C
oss
C
rss
t
d(on)
r
t
d(off)
f
60 V ID=1mA, VGS=0V
DSS
1.3 3 V ID=1mA, VDS= V
12 A VDS=10V, VGS=10V
0.7 S VDS=25V,ID=3A
DS
D
DM
GS
tot
j:Tstg
= 25°C unless otherwise stated).
amb
20 nA
10
µA
100
µA
0.22
0.33
0.45
Ω
Ω
0.32
350 pF
140 pF VDS=25 V, VGS=0V, f=1MHz
30 pF
8ns
25 ns
30 ns
16 ns
3 - 411
ZVN4306G
D
D
G
60 V
2.1 A
15 A
± 20
3W
-55 to +150 °C
V
=± 20V, VDS=0V
GS
VDS=60V, VGS=0V
V
=48V, VGS=0V, T=125°C(2)
DS
VGS=10V, ID=3A
V
=5V, ID=1.5A
GS
V
≈25V, V
DD
GEN
V
GS
=10V, ID=3A
S
ZVN4306G
GS=
TYPICAL CHARACTERISTI CS
V
10V
12V
12
11
10
(Amps)
ent
n Curr
i
- Dra
D
I
9
8
7
6
5
4
3
2
1
0
20V
012345678910
DS
V
- Drain Source
Saturation Characteristics
2.6
h)
2.4
S(t
G
2.2
V
2.0
and
1.8
)
on
1.6
S(
D
R
1.4
1.2
sed
i
1.0
al
rm
0.8
o
N
0.6
Gate Threshold Voltage V
-50
-25 0 25 50 75
Normalised RDS(on) and VGS(th) v Temperature
9V
8V
Voltage (Volts)
V
ID=3A
DS(on)
R
e
anc
t
s
Resi
e
c
our
n-S
ai
r
D
100
V
GS(TH)
150
125 175 200
Tj-Junction Temperature (°C)
GS=
GS=VDS
ID=1mA
7V
6V
5V
4V
3.5V
3V
10V
225
VGS=3V 6V
10
(Ω)
1.0
-Drain Source On Resistance
0.1
0.1
DS(on)
R
3.5V
1
ID-Drain Current
5V
(Amps)
On-resistance v drain current
5
4
(S)
e
c
3
DS=
V
ductan
ranscon
-T
fs
g
2
1
0
2
4
0
D(on)
I
10V
6810
- Drain Current (Amps
Transconductan ce v drai n current
8V
10V
10
121416 18 20
100
)
500
400
(pF)
300
tance
200
aci
ap
C
100
C
0
01020304050607080
VDS-Drain Source Vo ltage (Volts)
Capacitance v drain-source voltage
16
14
ts)
ol
(V
age
t
l
o
iss
C
oss
C
rss
C
V
Source
e
-Gat
GS
V
ID=3A
12
10
8
6
4
2
0
123 456789101112
0
VDD=
20V
40V
60V
Q-Charge (nC)
Gate charge v gate-source voltage
3 - 412
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