N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 1 – FEBRUARY 95
FEATURES
* 60 Volt V
*R
* Repetitive Avalanche Rating
DS(on)
DS
= 0.33Ω
ZVN4306AV
APPLICATIONS
* Solenoids / relay drivers for automotive
* Stepper Motor Drivers
* DC-DC convertors
D
G
S
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Continuous Drain Current at T
=25°C I
amb
Practical Continuous Drain Current at
T
=25°C
amb
Pulsed Drain Current I
Gate Source Voltage V
Power Dissipation at T
Practical Power Dissipation at T
=25°C P
amb
=25°C* P
amb
Avalanche Current-Repetitive I
Avalanche Energy-Repetitive E
Operating and Storage Temperature Range Tj:T
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B.
with copper equal to 1 inch square minimum
DS
D
I
DP
DM
GS
tot
totp
AR
AR
stg
60 V
1.1 A
1.3 A
15 A
± 20
V
850 mW
1.13 W
1A
25 mJ
-55 to +150 °C
ZVN4306AV
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
Gate-Source
Threshold Voltage
Gate-Body Leakage I
Zero Gate Voltage
Drain Current
On-State Drain
Current(1)
Static Drain-Source
On-State Resistance
(1)
Forward
Transconductance
BV
V
GSS
I
DSS
I
D(on)
R
g
GS(th)
DS(on)
fs
60 V ID=1mA, VGS=0V
DSS
1.3 3 V ID=1mA, VDS=V
100 nA
10
100
V
VDS=60V, VGS=0
µA
V
µA
12 A VDS=10V, VGS=10V
0.22
0.32
0.33
0.45
V
Ω
V
Ω
700 mS VDS=25V,ID=3A
=± 20V, V
GS
=48V, VGS=0V, T=125°C(2)
DS
=10V,ID=3A
GS
=5V, ID=1.5A
GS
(1)(2)
Input Capacitance (2) C
Common Source
Output Capacitance (2)
Reverse Transfer
Capacitance (2)
iss
C
oss
C
rss
350 pF
140 pF VDS=25 V, VGS=0V, f=1MHz
30 pF
GS
=0V
DS
Turn-On Delay Time
(2)(3)
Rise Time (2)(3) t
Turn-Off Delay Time
(2)(3)
Fall Time (2)(3) t
t
d(on)
r
t
d(off)
f
8ns
V
25 ns
30 ns
16 ns
≈25V, V
DD
=10V, ID=3A
GEN
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator